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Introduction to Solid-State Theory is a textbook for graduate students of physics and materials science. It also provides the theoretical background needed by physicists doing research in pure solid-state physics and its applications to electrical engineering. The fundamentals of solid-state theory are based on a description by delocalized and localized states and - within the concept of delocalized states - by elementary excitations. The development of solid-state theory within the last ten years has shown that by a systematic introduction of these concepts, large parts of the theory can be described in a unified way. This form of description gives a "pictorial" formulation of many elementary processes in solids, which facilitates their understanding.
(source: Nielsen Book Data)

• A Introduction.- 1 General remarks.- 2 The corresponding Landolt-Bornstein volumes.- 3 Physical quantities tabulated in this volume.- B Physical data.- 1 Elements of the IVth group and IV-IV compounds.- 1.1 Diamond (C).- 1.2 Silicon (Si).- 1.3 Germanium (Ge).- 1.4 Grey tin (a-Sn).- 1.5 Silicon carbide (SiC).- 1.6 Silicon germanium alloys (SixGe1-x).- 2 III-V compounds.- 2.1 Boron nitride (BN).- 2.2 Boron phosphide (BP).- 2.3 Boron arsenide (BAs).- 2.4 Aluminium nitride (AlN).- 2.5 Aluminium phosphide (AlP).- 2.6 Aluminium arsenide (AlAs).- 2.7 Aluminium antimonide (AlSb).- 2.8 Gallium nitride (GaN).- 2.9 Gallium phosphide (GaP).- 2.10 Gallium arsenide (GaAs).- 2.11 Gallium antimonide (GaSb).- 2.12 Indium nitride (InN).- 2.13 Indium phosphide (InP).- 2.14 Indium arsenide (InAs).- 2.15 Indium antimonide (InSb).- 2.16 Ternary and quaternary alloys between III-V compounds.- 3 Elements (other than group IV elements).- 3.1 Group III elements.- 3.2 Group IV elements see chapter.- 3.3 Group V elements.- 3.4 Group VI elements.- 4 Binary compounds (other than III-V compounds).- 4.1 IA-IB compounds.- 4.2 Ix-Vy compounds.- 4.2.1 I-V compounds.- 4.2.2 I3-V compounds.- 4.2.3 I2-I-V compounds.- 4.3 Ix-VIy compounds.- 4.4 I-VII compounds.- 4.5 IIx-IVy compounds.- 4.5.1 II2-IV compounds.- 4.5.2 II-IV2 compounds.- 4.6 IIx-Vy compounds.- 4.6.1 II3-V2 compounds.- 4.6.2 II4-V3 compounds.- 4.6.3 II-V compounds.- 4.6.4 II-V2 compounds.- 4.6.5 II-V4 compounds.- 4.6.6 Further II-V compounds.- 4.7 II-VI compounds.- 4.7.1 IIA-VIB compounds.- 4.7.2 Zinc chalcogenides.- 4.7.3 Cadmium chalcogenides.- 4.7.4 Mercury chalcogenides.- 4.8 II-VII2 compounds.- 4.9 III-V compounds see chapter.- 4.10 IIIx-VIy compounds.- 4.10.1 III-VI compounds.- 4.10.2 III2-VI3 compounds.- 4.10.3 Further IIIx-VIy compounds.- 4.10.4 III-III-VI compounds.- 4.11 III-VII compounds.- 4.12 IVx-Vy compounds.- 4.12.1 IV-V compounds.- 4.12.2 IV-V2 compounds.- 4.13 IVx-VIy compounds.- 4.13.1 IV-VI compounds.- 4.13.2 IV-VI2 compounds.- 4.13.3 IV2-VI3 compounds.- 4.14 IV-VII2 compounds.- 4.15 Vx-VIy compounds.- 4.16 V-VII3 compounds.- 5 Ternary compounds.- 5.1 Tetrahedrally bonded ternary and quasi-binary compounds.- 5.1.1 III2-VI3 compounds.- 5.1.2 I-III-VI2 compounds.- 5.1.3 II-IV-V2 compounds.- 5.1.4 I2-IV-V3 compounds.- 5.1.5 I2-V-VI4 compounds.- 5.1.6 II-III2-VI4 compounds.- 5.1.7 Other ordered vacancy compounds.- 5.1.8 Quaternary compounds.- 5.2 Further ternary compounds.- 5.2.1 Ix-IVy-VIz compounds.- 5.2.2 Ix-Vy-VIz compounds.- 5.2.3 IIx-IIIy-VIz compounds.- 5.2.4 IIIx-Vy-VIz compounds.- 5.2.5 IVx-Vy-VIz compounds.- 5.2.6 V-VI-VII compounds.- 5.2.7 Other ternary compounds.- 6 Further compounds with semiconducting properties.- 6.1 Boron compounds.- 6.2 Binary transition metal compounds.- 6.2.1 Compounds with elements of the IVth group.- 6.2.2 Compounds with elements of the Vth group.- 6.2.3 Oxides.- 6.2.4 Chalcogenides.- 6.3 Binary rare earth compounds.- 6.4 Ternary transition metal compounds.- 6.4.1 Pnigochalcogenides.- 6.4.2 Spinels and related compounds.- 6.4.3 Oxides.- 6.4.4 Further chalcogenides.- 6.5 Ternary rare earth compounds.- 7 Figures to chapters 3, 4 and 5.- 1 Index of Substances.- 2 Synopsis of the sections of this book and the corresponding sections of volumes III/17, III/22 and III/23a of the New Series of Landolt-Bornstein.- 3 Contents of the volumes of the New Series of Landolt-Bornstein dealing with semiconductors.
• (source: Nielsen Book Data)

The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt-Bomstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists working in the field of semiconductor physics for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data of their field of interest this volume contains the most important data of semiconductors. All data were compiled from information on semiconductors presented on more than 6000 pages in various volumes of the New Series of Landolt-Bomstein. We hope to meet the needs of the community of semiconductor physicists with this volume, forming a bridge between the laboratory and additional information sources in the libraries. The Editor Marburg, January 1996 Table of contents A Introduction 1 General remarks ...1 2 The corresponding Landolt-Bomstein volumes ...2 3 Physical quantities tabulated in this volume ...3 B Physical data Elements of the IVth group and IV-IV compounds 1. 1 Diamond (C) ...5 1. 2 Silicon (Si) ...11 1. 3 Germanium (Ge) ...28 1. 4 Grey tin (a-Sn) ...42 1. 5 Silicon carbide (SiC) ...47 1. 6 Silicon germanium alloys (SixGel_x) ...57 2 III-V compounds 2. 1 Boron nitride (BN) ...60 2. 2 Boron phosphide (BP) ...65 2. 3 Boron arsenide (BAs) ...68 2. 4 Aluminium nitride (AIN) ...69 2. 5 Aluminium phosphide (AlP) ...72 2. 6 Aluminium arsenide (AlAs) ...
(source: Nielsen Book Data)

• 1. Fundamentals.- 1.1 Introduction.- 1.2 The Basic Hamiltonian.- 1.3 The Hartree-Fock Approximation.-
• 2. The One-Electron Approximation.- 2.1 The Electron Gas Without Interaction.- 2.1.1 Introduction.- 2.1.2 The Energy States.- 2.1.3 Excited States.- 2.1.4 The Fermi Distribution.- 2.1.5 Free Electrons in an Electric Field.- 2.1.6 Free Electrons in a Magnetic Field.- 2.1.7 Dia- and Paramagnetism of Free Electrons, the de Haasvan Alphen Effect.- 2.2 Electrons in a Periodic Potential.- 2.2.1 Introduction.- 2.2.2 The Symmetries of the Crystal Lattice.- 2.2.3 The Schrodinger Equation for Electrons in a Periodic Potential.- 2.2.4 The Reciprocal Lattice, Bragg Reflections.- 2.2.5 Consequences of Translational Invariance.- 2.2.6 Nearly Free Electron Approximation.- 2.2.7 Wannier Functions, LCAO Approximation.- 2.2.8 General Properties of the Function En(k).- 2.2.9 Dynamics of Crystal Electrons.- 2.2.10 The Density of States in the Band Model.- 2.2.11 The Band Structure of Metals, Fermi Surfaces.- 2.2.12 The Band Structure of Semiconductors and Insulators.- 2.2.13 Consequences of the Invariance of the Hamiltonian to Symmetry Operations of the Space Group.- 2.2.14 Irreducible Representations of Space Groups.- 2.2.15 Spin, Time Reversal.- 2.2.16 Pseudopotentials.-
• 3. Elementary Excitations.- 3.1 The Interacting Electron Gas: Quasi-Electrons and Plasmons.- 3.1.1 Introduction.- 3.1.2 The Coulomb Interaction.- 3.1.3 The Hartree-Fock Approximation for the Electron Gas.- 3.1.4 Screening, Plasmons.- 3.1.5 Quasi-Electrons.- 3.1.6 The Dielectric Constant of the Electron Gas.- 3.2 Electron-Hole Interaction in Semiconductors and Insulators: Excitons.- 3.2.1 Introduction.- 3.2.2 The Ground State of the Insulator in Bloch and Wannier Representation.- 3.2.3 Excited States, the Exciton Representation.- 3.2.4 Wannier Excitons.- 3.2.5 Frenkel Excitons.- 3.2.6 Excitons as Elementary Excitations.- 3.3 Ion-Ion Interaction: Phonons.- 3.3.1 Introduction.- 3.3.2 The Classical Equations of Motion.- 3.3.3 Normal Coordinates, Phonons.- 3.3.4 The Energy Content of the Lattice Vibrations, Specific Heat.- 3.3.5 Calculation of Phonon Dispersion Relations.- 3.3.6 The Density of States.- 3.3.7 The Long Wavelength Limit: Acoustic Branch.- 3.3.8 The Long Wavelength Limit: Optical Branch.- 3.4 Spin-Spin Interaction: Magnons.- 3.4.1 Introduction.- 3.4.2 Spin Waves in Ferromagnets: Magnons.- 3.4.3 Spin Waves in Lattices with a Basis, Ferri-, and Antiferromagnetism.- 3.4.4 Ferromagnetism Near the Curie Temperature.- 3.4.5 Ordered Magnetism of Valence and Conduction Electrons, the Collective Electron Model.-
• 4. Electron-Phonon Interaction: Transport Phenomena.- 4.1 The Interaction Processes.- 4.1.1 Introduction.- 4.1.2 Interaction of Electrons with Acoustic Phonons.- 4.1.3 Electron-Phonon Interaction in Polar Solids, Polarons.- 4.2 The Boltzmann Equation.- 4.2.1 Introduction.- 4.2 Boltzmann Equations for the Electron and Phonon Systems.- 4.2.3 The Relaxation Time Approximation.- 4.2.4 The Variational Method.- 4.3 Formal Transport Theory.- 4.3.1 The Transport Equations.- 4.3.2 Transport Coefficients Without a Magnetic Field.- 4.3.3 Transport Coefficients with a Magnetic Field.- 4.4 Transport in Metals and Semiconductors.- 4.4.1 The Electrical Conductivity.- 4.4.2 Transport Coefficients in the Relaxation Time Approximation.- 4.4.3 Limits of Validity and Possible Extensions of the Approximations Used.-
• 5. Electron-Electron Interaction by Exchange of Virtual Phonons: Superconductivity.- 5.1 Introduction.- 5.2 Cooper Pairs.- 5.3 The Ground State of the Superconducting Electron Gas.- 5.4 Excited States.- 5.5 Comparison with Experiment.- 5.6 Thc Meissner-Ochsenfeld Effect.- 5.7 Further Theoretical Concepts.-
• 6. Interaction with Photons: Optics.- 6.1 Fundamentals.- 6.1.1 Introduction.- 6.1.2 Photons.- 6.1.3 Polaritons.- 6.1.4 The Complex Dielectric Constant.- 6.2 Electron-Photon Interaction.- 6.2.1 Introduction.- 6.2.2 Direct Transitions.- 6.2.3 Indirect Transitions.- 6.2.4 Two-Photon Absorption.- 6.2.5 Exciton Absorption.- 6.2.6 Comparison with Experimental Absorption and Reflection Spectra.- 6.2.7 Absorption by Free Charge Carriers.- 6.2.8 Absorption and Reflection in a Magnetic Field.- 6.2.9 Magneto-Optics of Free Charge Carriers.- 6.3 Phonon-Photon Interaction.- 6.3.1 Introduction.- 6.3.2 One-Phonon Absorption.- 6.3.3 Multi-Phonon Absorption.- 6.3.4 Raman and Brillouin Scattering.-
• 7. Phonon-Phonon Interaction: Thermal Properties.- 7.1 Introduction.- 7.2 Frequency Shift and Lifetime of Phonons.- 7.3 The Anharmonic Contributions to the Free Energy, Thermal Expansion.- 7.4 The Thermal Conductivity of the Lattice.-
• 8. Local Description of Solid-State Properties.- 8.1 Localized and Extended States.- 8.2 The Chemical Bond.- 8.2.1 Introduction.- 8.2.2 The Localized Single Bond.- 8.2.3 Localized and Delocalized Bonds.- 8.2.4 Solids with Localized Bonds: Insulators and Semiconductors.- 8.2.5 The Dielectric Theory of the Covalent Bond.- 8.2.6 Solids with Delocalized Bonds: Metals.- 8.3 Local Versus Nonlocal Description in Unperturbed Lattices.- 8.3.1 Introduction.- 8.3.2 Correlations, the Hubbard Model.- 8.3.3 Metal-Insulator Transitions.- 8.3.4 Limits of the Boltzmann Equation, the Kubo and Kubo-Greenwood Formulae.- 8.3.5 The Small Polaron.- 8.3.6 Hopping Conductivity in Polar Solids.-
• 9. Localized States.- 9.1 Point Imperfections.- 9.1.1 Introduction.- 9.1.2 Description Within the Framework of the Band Model.- 9.1.3 Crystal Field Theory.- 9.1.4 Localized Lattice Vibrations.- 9.1.5 Defect Statistics, Reaction Kinetics.- 9.1.6 Disorder Equilibria.- 9.1.7 Diffusion and Ionic Conduction.- 9.1.8 Recombination Processes at Imperfections.- 9.1.9 Optical Transitions at Imperfections, Configuration Coordinates.- 9.1.10 Electron-Phonon Interaction at Imperfections.- 9.1.11 Bound Excitons.- 9.1.12 Imperfections as Scattering Centres, the Kondo Effect.- 9.2 Localized States and Elementary Excitations at Surfaces.- 9.2.1 Introduction.- 9.2.2 Electronic Surface States.- 9.2.3 Surface-Phonons, -Polaritons, and -Plasmons.-
• 10. Disorder.- 10.1 Localized States in Disordered Lattices.- 10.1.1 Introduction.- 10.1.2 Localized States.- 10.1.3 Density of States.- 10.2 Transport in Disordered Lattices.- 10.2.1 Transport in Extended States.- 10.2 The Hopping Probability.- 10.2.3 Fixed Range and Variable Range Hopping.- 10.2.4 Conductivity in Impurity Bands and in Amorphous Semiconductors.- Appendix: The Occupation Number Representation.- Problems to Chapters 1-9.
• (source: Nielsen Book Data)

Introduction to Solid-State Theory is a textbook for graduate students of physics and materials science. It also provides the theoretical background needed by physicists doing research in pure solid-state physics and its applications to electrical engineering. The fundamentals of solid-state theory are based on a description by delocalized and localized states and - within the concept of delocalized states - by elementary excitations. The development of solid-state theory within the last ten years has shown that by a systematic introduction of these concepts, large parts of the theory can be described in a unified way. This form of description gives a "pictorial" formulation of many elementary processes in solids, which facilitates their understanding.
(source: Nielsen Book Data)

This Data Handbook is a updated and largely extended new edition of the book "Semiconductors: Basic Data". The data of the former edition have been updated and a complete representation of all relevant basic data is now given for all known groups of semiconducting materials. The CD-ROM accompanying the handbook contains the electronic version of the printed handbook, the references for all data and additionally to the 240 figures of the printed version about 1000 further figures. Full text search is possible.
(source: Nielsen Book Data)

The large handbooks in physics, chemistry and other disciplines contain data needed every day as well as additional equally important data needed only at longer time intervals. This volume contains the basic data and a full list of contents of the respective Landolt-B"rnstein volumes from which the data were drawn. Hence the user is informed what additional information is held at his disposal in the more complete handbooks, i.e. this volume provides a bridge from the laboratory to the library. It contains data and further information about semiconducting substances.
(source: Nielsen Book Data)

The large handbooks in physics, chemistry and other disciplines contain data needed every day, and additional data, as important as the others, but needed only at longer time intervals. Thus a new series "Data in Science and Technology" has been founded which besides the basic data contains a full list of contents of the respective volumes the data were drawn from. Hence the user is informed what additional information is held at his disposal in the more complete handbooks, i.e. the "Data science and technology" provide a bridge from the laboratory to the library. The third volume contains information about semiconductors: other than group IV elements and III-V compounds. It is an extension of the first volume on group IV elements and III-V compounds and contains data and further information about some hundred other semiconducting substances.
(source: Nielsen Book Data)

• Contents: Part A: Introduction: General remarks.- Physical quantities tabulated in this volume.- Part B: Physical data: Elements of the IVth group and the IV-IV compounds: Diamond (C).- Silicon (Si).- Germanium (Ge).- Grey tin ( Sn).- Silicon carbide (SiC).- Silicon germanium alloys (SixGe1-x).- III-V compounds: Boron nitride (BN).- Boron phosphide (BP).- Boron arsenide (BAs).- Aluminium nitride (AlN).- Aluminium phosphide (AlP).- Aluminium arsenide (AlAs).- Aluminium antimonide (AlSb).- Gallium nitride (GaN).- Gallium phosphide (GaP).- Gallium arsenide (GaAs).- Gallium antimonide (GaSb).- Indium nitride (InN).- Indium phosphide (InP).- Indium arsenide (InAs).- Indium antimonide (InSb).- Ternary and quaterny alloys between III-V compounds.- Appendix: Contents of the volumes of the New Series of Landolt-B"rnstein dealing with group IV and group III-V semiconductors.
• (source: Nielsen Book Data)

This handbook on semiconductor physics is intended for scientists and graduate students.
(source: Nielsen Book Data)

• Front Cover; Festkörper Probleme Xll: Advances in Solid State Physics; Copyright Page; Vorwort; Table of Contents; Table of Contents;
• Chapter 1. Hochintegrierte Halbleiterschaltungen; 1. Einleitung; 2. Gründe für die Einführung der hochintegrierten Schaltungen; 3. Entwicklung und Prüfung von hochintegrierten Halbleiterschaltungen; 4. Neue Halbleiterstrukturen für hochintegrierte Schaltungen; 5. Schluß; Literaturverzeichnis;
• Chapter 2. Die Ionenimplantation als Dotiertechnologie; 1. Gegenüberstellung von Dotierungsverfahren in der Halbleiter-technologie.

• 2. Theoretische Grundlagen der Ionenimplantation3. Experimente; 4. Anwendung der Ionenimplantation auf Halbleiter-Bauelemente; 5. Andere Anwendungsmöglichkeiten der Ionenimplantation; Danksagung; Literatur;
• Chapter 3. Phononpulse; 1. Einleitung; 2. Wärmepulse; 3. Ultraschallexperimente oberhalb 1011 Hz mit der supraleitendenTunneldiode; 4. Optischer Nachweis von 1012 Hz Phononen; 5. Andere Experimente mit höchstfrequenten Phononen; 6. Schluß; Literatur;
• Chapter 4. Electronic Structure and Optical Properties of Amorphous Semiconductors; Introduction; I. The problem.

• II. The atomic structure of amorphous solidsIII. Basic equations; IV. Simple models; V. The pseudopotential approach; VI. Discussion of results; Conclusions; References;
• Chapter 5. Zeitaufgelöste Spektroskopie an Halbleitern; Einleitung; Teil A: Experimentelle Methoden; Teil B: Allgemeine kinetische Modelle; Teil C: Zeitaufgelöste Lumineszenzmessungen an Halbleitern; Ausblick; Literaturverzeichnis;
• Chapter 6. Polaronen; I. Einleitung; II. Einteilchennäherungen von Elektronen und Phononen in Kristallen; III. A. Freie, große Polaronen; IV. Kleine Polaronen.

• Polaritonenstreuung und parametrische LumineszenzWeitere spezielle Untersuchungen an einachsigen Kristallen; Experimentelle Anordnungen; Kopplung von Polaritonen und Plasmonen; Streuquerschnitte und Intensitätsmessungen; Literatur;
• Chapter 9. Strahlungslose Rekombination in Halbleitern (Theorie); 1. Einführung; 2. Grundzüge der Theorie; 3. Mehrphononenprozesse; 4. Kaskadenprozesse; 5. Auger-Prozesse; 6. Phononenassistierte Auger-Prozesse; 7. Plasmonenprozesse; 8. Schlußbemerkung; Literatur;
• Chapter 10. Auger-Rekombination in Halbleitern; Einleitung.

• v. Übergangsgebiet ("mittlere Polaronen"")Danksagung; Literatur; Chapter 7. Polaritonen (Theorie); I. Einleitung; II. Grundgleichungen der Polaritonentheorie; III. Das zweiatomige kubische Gitter; IV. Das allgemeine mehratomige Gitter; V. Eigenfrequenzen und Eigenvektoren der Polaritonen in Te und α-Quarz; VI. Kristalloptik und Polaritonen; VII. Raman-Effekt an Polaritonen; VIII. Dämpfung der Polaritonen; IX. Stimulierter Raman-Effekt und Polariton-Raman-Laser; Literatur; Chapter 8. Polaritonen (Experiment); Einleitung; Kubische Kristalle; Einachsige Kristalle; Außerordentliche Polaritonen.

Advances in Solid State Physics.

• Cover; Festkörper Problem VIII; Copyright Page; Vorwort; Table of Contents;
• Chapter 1. Strahlenschäden in Halbleitern und Halbleiterbauelementen; Summary; 1. Einführung; 2. Zum Erzeugungsmechanismus von Gitterfehlstellen; 3. Die Mikrostruktur der Strahlungsdefekte; 4. Elektrische und optische Untersuchungen an bestrahlten Halbleitern; 5. Strahlenschädigung von Halbleiterbauelementen; 6. Tempereffekte an bestrahIten Halbleitern; Literatur;
• Chapter 2. Kristallzucht aus der Gasphase; Summary; 1. Einleitung; 2. Allgemeines zur Kristallzucht; 3. Bildung fester Phasen aus Gasen

• 4. Kristallzucht aus gasförmigen Nährphasen5. Schlußbemerkungen; Literatur;
• Chapter 3. Die Physik des photographischen Prozesses; Summary: Physical problems of the photographic process; I. Einleitung; II. Die Übertragungskette; III. Die Lichtstreuung in photographischen Schichten; IV. Zusammenhang zwischen Quantenempfindlichkeit der Halogensilberkristalle und Schwärzung der photographischen Schicht; V. Kristallstruktur photographischer Emulsionen; VI. Bindungsverhältnisse im Halogensilberkristall; VII. Elektrische Leitfähigkeit des Halogensilbers

• VIII. Die Beteiligung von beweglichen (Photo-) Elektronen und (Zwischengitter-)Silberionen am photographischen ElementarprozeßIX. Lichtabsorption, Bändermodell und Elektronenfallen; X. Randschichtprobleme am Kontakt AgBr/wässrige Lösung; XI. Die Chemische Reifung; XII. Spektrale Sensibilisierung; XIII. Solarisation; XIV. Reziprozitätsverhalten; XV. Doppelbelichtungseffekte; XVI. Mechanismus der photographischen Entwicklung; Literatur;
• Chapter 4. Zur Physik der Elektrophotographie; 1. Einleitung; 2. Aufladung; 3. Entladung durch Belichtung; 4. Entwicklungscharakteristik

• 5. Farbelektrophotographie6. Ausblick; Literatur;
• Chapter 5. Der photokapazitive Effekt; 1. Einleitung; 2. Ursachen fur die photokapazitiven Effekte; 3. Kriterien fur die Unterscheidung der Effekte; 4. Historische Entwicklung der Arbeiten über photokapazitive Effekte; 5. Neuere Untersuchungen an Il/VI-Photohalbleitern; 6. Untersuchungen an anderen Substanzen; 7. Photokapazitive Effekte in der Elektronik; 8. Zusammenfassung; Literatur;
• Chapter 6. Neue Ergebnisse über Elektronentraps und "Tunnel-Nachleuchten"" in ZnS; Allgemeine Vorbemerkungen über ZnS-Phosphore

• Bisherige Ergebnisse über Traps in Phosphoren der ZnS-GruppeNeue Ergebnisse bei tiefer Temperatur (> 4,2 ° K); Zeitliche Abklingung des Nachleuchtens bei festgehaltener Temperatur; Abhängigkeit der Einfangwahrscheinlichkeit durch Traps von der Temperatur; Beziehung des "Tunnel-Nachleuchtens"" zum "Donor-Acceptor""-Modell der Lumineszenz; Literatur;
• Chapter 7. Ergebnisse und Mängel der heutigen Theorie der Supraleiter 2. Art; 1. Einleitung; 2. Grundlagen der Theorie der Supraleiter 2. Art; 3. Vorhandene Ergebnisse; 4. Möglichkeiten für weitere Ergebnisse; Literatur

Festkörper Probleme VIII reviews the status of radiation damage in semiconducting materials and components. This book examines the problems connected to the mechanism of production of defects by bombardment with energetic particles, particularly the displacement energy. Comprised of nine chapters, this book begins with an overview of the microstructure of radiation defects in silicon, which is known from optical absorption experiments and electron spin resonance. This text then explains the preparation of single crystals of high purity or defined impurity contents, which is the basis of succes.

• Front Cover; Festkörper Probleme IX: Advances in Solid State Physics; Copyright Page; Vorwort; Table of Contents;
• Chapter 1. Struktur und Bindungsverhältnisse in amorphen Halbleitern; I. Einleitung; 2. Allgemeines über die Struktur von Gläsern; 3. Halbmetalle im glasigen Zustand; 4. Bindung über s-Zustände in Kristallen und Gläsern; 5. Aufbau der Schmelzen von Germanium und Antimon; 6. Bildung und Struktur von Chalkogenidgläsern; 7. Literatur;
• Chapter 2. Charge transport in non-crystalline semiconductors; 1. Introduction; impurity conduction; 2. Glasses and evaporated films.

• 3. Amorphous germanium4. Switching; 5. References;
• Chapter 3. Optische und elektrische Eigenschaften von amorphen Halbleitern; 1. Einleitung; 2. Optische Eigenschaften; 3. Elektrische Eigenschaften; 4. Abschließende Bemerkungen; 5. Literaturverzeichnis;
• Chapter 4. Light Scattering in Semiconductors; 1. Introduction; 2. Experimental Methods; 3. Phonons; 4. Electrons; Acknowledgments; 6. References;
• Chapter 5. Der Jahn-Teller-Effekt; 1. Einleitung; 2. Der Jahn-Teller-Effekt von E-Zuständen; 3. Der Jahn-Teller-Effekt von T-Zuständen in Oh-Symmetrie; 4. Schlußbetrachtungen; Literatur.

• Chapter 6. Elektrische Instabilitäten in Halb- und Photoleitern1. Einleitung; 2. Domänen und Filamente in Halbleitern mit fallender differentieller Kennlinie; 3. Einiges zur phänomenologischen Theorie, stationäre Zustände; 4. Nichtstationäre Zustände; 5. Physikalische Mechanismen; 6. Anhang; 7. Literatur;
• Chapter 7. Über die Physik des Lawinendurchbruches in Halbleitern; 1. Einführung; 2. Mikroplasmen und perfekte Ubergänge; 3. Ionisationskoeffizienten und Durchbruchspannung; 4. Elektronenemission; 5. Lichtemission aus pn-Übergängen; 6. Schluß; 7. Literatur.

• Chapter 8. Analytic Properties of Thermodynamic Functions and Phase Transitions1. Introduction; 2. Experimental results about phase transitions; 3. The present status of theory; 4. Phases as holomorphic regions in the complex temperature plane; 5. Thermodynamic functions of several physical complex variables: microscopic aspects; 6. Holomorphic thermodynamic functions: thermodynamical aspects; References;
• Chapter 9. Die elektronische Bandstruktur in äußeren Magnetfeldern; 1. Einleitung; 2. Phasenintegral-Quantisierung; 3. Magnetic Breakdown; 4. Die magnetische Translationsgruppe.

• 5. Stark gebundene Elektronen6. Nahezu freie Elektronen; 7. De Haas-van Alphen-Amplituden; 8. Literatur;
• Chapter 10. Physical Properties of Transferred-Electron and Avalanche MicrowaveDevices; 1. Introduction; 2. Transferred-electron devices; 3. Avalanche multiplication devices; 4. Concluding remarks; 5. References;
• Chapter 11. Neue Ergebnisse an MIS-Transistoren; Literatur;
• Chapter 12. The Application of Ion Implantation to Semiconductor Devices; Introduction; 1. Apparatus; 2. Doping Profiles; 3. Electrical properties of implanted layers; 4. Devices; 5. Compound semiconductors; Conclusions.