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Book
xxii, 850 pages ; 25 cm
  • Preface xv About the Author xix 1 Electrons, Photons, and Phonons 1.1 Selected Concepts of Quantum Mechanics 1.1.1 The dual nature of the photon 1.1.2 The dual nature of the electron 1.1.3 Electrons in confined environments 1.2 Selected Concepts of Statistical Mechanics 1.2.1 Thermal motion and thermal energy 1.2.2 Thermal equilibrium 1.2.3 Electron statistics 1.3 Selected Concepts of Solid-State Physics 1.3.1 Bonds and bands 1.3.2 Metals, insulators, and semiconductors 1.3.3 Density of states 1.3.4 Lattice vibrations: phonons 1.4 Summary 1.5 Further reading Problems 2 Carrier Statistics in Equilibrium 2.1 Conduction and Valence Bands-- Bandgap-- Holes 2.2 Intrinsic Semiconductor 2.3 Extrinsic Semiconductor 2.3.1 Donors and acceptors 2.3.2 Charge neutrality 2.3.3 Equilibrium carrier concentration in a doped semiconductor 2.4 Carrier Statistics in Equilibrium 2.4.1 Conduction and valence band density of states 2.4.2 Equilibrium electron concentration 2.4.3 Equilibrium hole concentration 2.4.4 np product in equilibrium 2.4.5 Location of Fermi level 2.5 Summary 2.6 Further Reading Problems 3 Carrier Generation and Recombination 3.1 Generation and Recombination Mechanisms 3.2 Thermal Equilibrium: Principle of Detailed Balance 3.3 Generation and Recombination Rates in Thermal Equilibrium 3.3.1 Band-to-band optical generation and recombination 3.3.2 Auger generation and recombination 3.3.3 Trap-assisted thermal generation and recombination 3.4 Generation and Recombination Rates Outside Equilibrium 3.4.1 Quasi-neutral low-level injection-- recombination lifetime 3.4.2 Extraction-- generation lifetime 3.5 Dynamics of Excess Carriers in Uniform Situations 3.5.1 Example 1: Turn-on transient 3.5.2 Example 2: Turn-off transient 3.5.3 Example 3: A pulse of light 3.6 Surface Generation and Recombination 3.7 Summary 3.8 Further Reading Problems 4 Carrier Drift and Diffusion 4.1 Thermal Motion 4.1.1 Thermal velocity 4.1.2 Scattering 4.2 Drift 4.2.1 Drift velocity 4.2.2 Velocity saturation 4.2.3 Drift current 4.2.4 Energy band diagram under electric field 4.3 Diffusion 4.3.1 Fick's first law 4.3.2 The Einstein relation 4.3.3 Diffusion current 4.4 Transit Time 4.5 Nonuniformly Doped Semiconductor in Thermal Equilibrium 4.5.1 Gauss' law 4.5.2 The Boltzmann relations 4.5.3 Equilibrium carrier concentration 4.6 Quasi-Fermi Levels and Quasi-Equilibrium 4.7 Summary 4.8 Further Reading Problems 5 Carrier Flow 5.1 Continuity Equations 5.2 Surface Continuity Equations 5.2.1 Free surface 5.2.2 Ohmic contact 5.3 Shockley Equations 5.4 Simplifications of Shockley Equations to One-Dimensional Quasi-Neutral Situations 5.5 Majority-Carrier Situations 5.5.1 Example 1: Semiconductor bar under voltage 5.5.2 Example 2: Integrated resistor 5.6 Minority-Carrier Situations 5.6.1 Example 3: Diffusion and bulk recombination in a "long" bar 5.6.2 Example 4: Diffusion and surface recombination in a "short" bar 5.6.3 Length scales of minority carrier situations 5.7 Dynamics of Majority-Carrier Situations 5.8 Dynamics of Minority-Carrier Situations 5.8.1 Example 5: Transient in a bar with S = â 5.9 Transport in Space-Charge and High-Resistivity Regions 5.9.1 Example 6: Drift in a high-resistivity region under external electric field 5.9.2 Comparison between SCR and QNR transport 5.10 Carrier Multiplication and Avalanche Breakdown 5.10.1 Example 7: Carrier multiplication in a high-resistivity region with uniform electric field 5.11 Summary 5.12 Further Reading Problems 6 PN Junction Diode 6.1 The Ideal PN Junction Diode 6.2 Ideal PN Junction in Thermal Equilibrium 6.3 Current-Voltage Characteristics of The Ideal PN Diode 6.3.1 Electrostatics under bias 6.3.2 I-V characteristics: qualitative discussion 6.3.3 I-V characteristics: quantitative models 6.4 Charge-Voltage Characteristics of Ideal PN Diode 6.4.1 Depletion charge 6.4.2 Minority carrier charge 6.5 Equivalent Circuit Models of The Ideal PN Diode 6.6 Nonideal and Second-Order Effects 6.6.1 Short diode 6.6.2 Space-charge generation and recombination 6.6.3 Series resistance 6.6.4 Breakdown voltage 6.6.5 Nonuniform doping distributions 6.6.6 High-injection effects 6.7 Integrated PN Diode 6.7.1 Isolation 6.7.2 Series resistance 6.7.3 High-low junction 6.8 Summary 6.9 Further Reading Problem 7 Schottky Diode and Ohmic Contact 7.1 The Ideal Schottky Diode 7.2 Ideal Schottky Diode in Thermal Equilibrium 7.2.1 A simpler system: a metal-metal junction 7.2.2 Energy band lineup of metal-semiconductor junction 7.2.3 Electrostatics of metal-semiconductor junction in equilibrium 7.3 Current-Voltage Characteristics of Ideal Schottky Diode 7.3.1 Electrostatics under bias 7.3.2 I-V characteristics: qualitative discussion 7.3.3 I-V characteristics: thermionic emission model 7.4 Charge-Voltage Characteristics of Ideal Schottky Diode 7.5 Equivalent Circuit Models for The Ideal Schottky Diode 7.6 Nonideal and Second-Order Effects 7.6.1 Series resistance 7.6.2 Breakdown voltage 7.7 Integrated Schottky Diode 7.8 Ohmic Contacts 7.8.1 Lateral ohmic contact: transmission-line model 7.8.2 Boundary conditions imposed by ohmic contacts 7.9 Summary 7.10 Further Reading Problems 8 The Si Surface and the Metal-OxideSemiconductor Structure 8.1 The Semiconductor Surface 8.2 The Ideal Metal-Oxide-Semiconductor Structure 8.3 The Ideal Metal-Oxide-Semiconductor Structure at Zero Bias 8.3.1 General relations for the electrostatics of the ideal MOS structure 8.3.2 Electrostatic of the MOS structure under zero bias 8.4 The Ideal Metal-Oxide Semiconductor Structure Under Bias 8.4.1 Depletion 8.4.2 Flatband 8.4.3 Accumulation 8.4.4 Threshold 8.4.5 Inversion 8.4.6 Summary of charge-voltage characteristics 8.5 Dynamics of The MOS Structure 8.5.1 Quasi-static C-V characteristics 8.5.2 High-frequency C-V characteristics 8.5.3 Deep depletion 8.6 Weak Inversion and The Subthreshold Regime 8.7 Three-Terminal MOS Structure 8.8 Summary 8.9 Further Reading Problems 9 The "Long" Metal-Oxide-Semiconductor Field-Effect Transistor 9.1 The Ideal MOSFET 9.2 Qualitative Operation of The Ideal MOSFET 9.3 Inversion Layer Transport in The Ideal MOSFET 9.4 Current-Voltage Characteristics of The Ideal MOSFET 9.4.1 The cut-off regime 9.4.2 The linear regime 9.4.3 The saturation regime 9.4.4 DC large-signal equivalent-circuit model of ideal MOSFET 9.4.5 Energy band diagrams 9.5 Charge-Voltage Characteristics of The Ideal MOSFET 9.5.1 Depletion charge 9.5.2 Inversion charge 9.6 Small-Signal Behavior of Ideal MOSFET 9.6.1 Small-signal equivalent circuit model of ideal MOSFET 9.6.2 Short-circuit current-gain cut-off frequency, fT, of ideal MOSFET in saturation 9.7 Nonideal Effects in MOSFET 9.7.1 Body effect 9.7.2 Effect of back bias 9.7.3 Channel-length modulation 9.7.4 The subthreshold regime 9.7.5 Source and drain resistance 9.8 Summary 9.9 Further Reading Problems 10 The "Short" Metal-Oxide-Semiconductor Field-Effect Transistor 10.1 MOSFET Short-Channel Effects: Transport 10.1.1 Mobility degradation 10.1.2 Velocity saturation 10.2 MOSFET Short-Channel Effects: Electrostatics 10.2.1 Threshold voltage dependence on gate length: VT rolloff 10.2.2 Threshold voltage dependence on VDS: drain-induced barrier lowering (DIBL) 10.2.3 Subthreshold swing dependence on gate length and VDS 10.3 MOSFET Short-Channel Effects: Gate Stack Scaling 10.3.1 Gate capacitance 10.3.2 Gate leakage current 10.4 MOSFET High-Field Effects 10.4.1 Electrostatics of velocity saturation region 10.4.2 Impact ionization and substrate current 10.4.3 Output conductance 10.4.4 Gate-induced drain leakage 10.5 MOSFET Scaling 10.5.1 The MOSFET as a switch 10.5.2 Constant field scaling of the ideal MOSFET 10.5.3 Constant voltage scaling of the ideal MOSFET 10.5.4 Generalized scaling of short MOSFETs 10.5.5 MOSFET scaling: a historical perspective 10.5.6 Evolution of MOSFET design 10.6 Summary 10.7 Further Reading Problems 11 The Bipolar Junction Transistor 11.1 The Ideal BJT 11.2 Current-Voltage Characteristics of The Ideal BJT 11.2.1 The forward-active regime 11.2.2 The reverse regime 11.2.3 The cut-off regime 11.2.4 The saturation regime 11.2.5 Output I-V characteristics 11.3 Charge-Voltage Characteristics of Ideal BJT 11.3.1 Depletion charge 11.3.2 Minority carrier charge.
  • (source: Nielsen Book Data)9780134670904 20171218
A modern take on microelectronic device engineering Microelectronics is a 50-year-old engineering discipline still undergoing rapid evolution and societal adoption. Integrated Microelectronic Devices: Physics and Modeling fills the need for a rigorous description of semiconductor device physics that is relevant to modern nanoelectronics. The central goal is to present the fundamentals of semiconductor device operation with relevance to modern integrated microelectronics. Emphasis is devoted to frequency response, layout, geometrical effects, parasitic issues and modeling in integrated microelectronics devices (transistors and diodes). In addition to this focus, the concepts learned here are highly applicable in other device contexts. This text is suitable for a one-semester junior or senior-level course by selecting the front sections of selected chapters (e.g. 1-9). It can also be used in a two-semester senior-level or a graduate-level course by taking advantage of the more advanced sections.
(source: Nielsen Book Data)9780134670904 20171218
Engineering Library (Terman)
EE-216-01
Book
xxiv, 758 p. : ill. (chiefly col.) ; 24 cm.
  • Part I Semiconductor Material Properties Chapter 1: The Crystal Structure of Solids Chapter 2: Introduction to Quantum Mechanics Chapter 3: Introduction to the Quantum Theory of Solids Chapter 4: The Semiconductor in Equilibrium Chapter 5: Carrier Transport Phenomena Chapter 6: Nonequilibrium Excess Carriers in Semiconductors Part II Fundamental Semiconductor Devices Chapter 7: The pn Junction Chapter 8: The pn Junction Diode Chapter 9: Metal-Semiconductor and Semiconductor Heterojunctions Chapter 10: Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor Chapter 11: Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts Chapter 12: The Bipolar Transistor Chapter 13: The Junction Field-Effect Transistor Part III Specialized Semiconductor Devices Chapter 14: Optical Devices Chapter 15: Semiconductor Microwave and Power Devices Appendix A: Selected List of Symbols Appendix B: System of Units, Conversion Factors, and General Constants Appendix C: The Periodic Table Appendix D: Unit of Energy-The Electron-Volt Appendix E: "Derivation" of Schrodinger's Wave Equation Appendix F: Effective Mass Concepts Appendix G: The Error Function Appendix H: Answers to Selected Problems.
  • (source: Nielsen Book Data)9780073529585 20160603
With its strong pedagogy, superior readability, and thorough examination of the physics of semiconductor material, "Semiconductor Physics and Devices, 4/e" provides a basis for understanding the characteristics, operation, and limitations of semiconductor devices. Neamen's "Semiconductor Physics and Devices" deals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way.
(source: Nielsen Book Data)9780073529585 20160603
Engineering Library (Terman)
EE-216-01
Book
xvii, 335 p. : ill. ; 26 cm.
  • Preface-- 1. Introduction-- 2. Energy band basics-- 3. Electron and hole concentrations-- 4. Thermal equilibrium-- 5. Charge transport-- 6. np-and Np-junction basics-- 7. Solar cells-- 8. Light-emitting diodes-- 9. HBT basics-- 10. MOSFET basics-- 11. HJFET basics-- 12. Transistor capacitances-- 13. Transistors for high-speed logic-- 14. Transistors for high frequencies-- 15. Transistors for memories-- 16. Transistors for high power-- 17. Transistors for low noise-- 18. Transistors for the future-- Appendix A. Physical constants-- Appendix B. Selected material properties-- Appendix C. N-MOSFET parameters-- Index.
  • (source: Nielsen Book Data)9780521514606 20160604
Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: * Rigorous theoretical treatment combined with practical detail * A theoretical framework built up systematically from the Schrodinger Wave Equation and the Boltzmann Transport Equation * Covers MOSFETS, HBTs and HJFETS * Uses the PSP model for MOSFETS * Rigorous treatment of device capacitance * Describes the operation of modern, high-performance transistors and diodes * Evaluates the suitability of various transistor types and diodes for specific modern applications * Covers solar cells and LEDs and their potential impact on energy generation and reduction * Includes a chapter on nanotransistors to prepare students and professionals for the future * Provides results of detailed numerical simulations to compare with analytical solutions * End-of-chapter exercises * Online lecture slides for undergraduate and graduate courses.
(source: Nielsen Book Data)9780521514606 20160604
Engineering Library (Terman), eReserve
EE-216-01
Book
x, 815 p. : ill. ; 25 cm.
  • Introduction.Part I Semiconductor Physics.Chapter 1 Physics and Properties of Semiconductors-A Review.1.1 Introduction.1.2 Crystal Structure.1.3 Energy Bands and Energy Gap.1.4 Carrier Concentration at Thermal Equilibrium.1.5 Carrier-Transport Phenomena.1.6 Phonon, Optical, and Thermal Properties.1.7 Heterojunctions and Nanostructures.1.8 Basic Equations and Examples.Part II Device Building Blocks.Chapter 2 p-n Junctions.2.1 Introduction.2.2 Depletion Region.2.3 Current-Voltage Characteristics.2.4 Junction Breakdown.2.5 Transient Behavior and Noise.2.6 Terminal Functions.2.7 Heterojunctions.Chapter 3 Metal-Semiconductor Contacts.3.1 Introduction.3.2 Formation of Barrier.3.3 Current Transport Processes.3.4 Measurement of Barrier Height.3.5 Device Structures.3.6 Ohmic Contact.Chapter 4 Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction.4.2 Ideal MIS Capacitor.4.3 Silicon MOS Capacitor.Part III Transistors.Chapter 5 Bipolar Transistors.5.1 Introduction.5.2 Static Characteristics.5.3 Microwave Characteristics.5.4 Related Device Structures.5.5 Heterojunction Bipolar Transistor.Chapter 6 MOSFETs.6.1 Introduction.6.2 Basic Device Characteristics.6.3 Nonuniform Doping and Buried-Channel Device.6.4 Device Scaling and Short-Channel Effects.6.5 MOSFET Structures.6.6 Circuit Applications.6.7 Nonvolatile Memory Devices.6.8 Single-Electron Transistor.Chapter 7 JFETs, MESFETs, and MODFETs.7.1 Introduction.7.2 JFET and MESFET.7.3 MODFET.Part IV Negative-Resistance and Power Devices.Chapter 8 Tunnel Devices.8.1 Introduction.8.2 Tunnel Diode.8.3 Related Tunnel Devices.8.4 Resonant-Tunneling Diode.Chapter 9 IMPATT Diodes.9.1 Introduction.9.2 Static Characteristics.9.3 Dynamic Characteristics.9.4 Power and Efficiency.9.5 Noise Behavior.9.6 Device Design and Performance.9.7 BARITT Diode.9.8 TUNNETT Diode.Chapter 10 Transferred-Electron and Real-Space-Transfer Devices.10.1 Introduction.10.2 Transferred-Electron Device.10.3 Real-Space-Transfer Devices.Chapter 11 Thyristors and Power Devices.11.1 Introduction.11.2 Thyristor Characteristics.1 1.3 Thyristor Variations.11.4 Other Power Devices.Part V Photonic Devices and Sensors.Chapter 12 LEDs and Lasers.12.1 Introduction.12.2 Radiative Transitions.12.3 Light-Emitting Diode (LED).12.4 Laser Physics.12.5 Laser Operating Characteristics.12.6 Specialty Lasers.Chapter 13 Photodetectors and Solar Cells.13.1 Introduction.13.2 Photoconductor.13.3 Photodiodes.13.4 Avalanche Photodiode.13.5 Phototransistor.13.6 Charge-Coupled Device (CCD).13.7 Metal-Semiconductor-Metal Photodetector.13.8 Quantum-Well Infrared Photodetector.13.9 Solar Cell.Chapter 14 Sensors.14.1 Introduction.14.2 Thermal Sensors.14.3 Mechanical Sensors.14.4 Magnetic Sensors.14.5 Chemical Sensors.Appendixes.A. List of Symbols.B. International System of Units.C. Unit Prefixes.D. Greek Alphabet.E. Physical Constants.F. Properties of Important Semiconductors.G. Properties of Si and GaAs.H. Properties of SiO, and Si3N.Index.
  • (source: Nielsen Book Data)9780471143239 20160528
This is the Third Edition of the standard textbook and reference in the field of semiconductor devices. This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: a complete update of the latest developments; new devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more; materials completely reorganized; and, problem sets at the end of each chapter. All figures reproduced at the highest quality "Physics of Semiconductor Devices, Third Edition" offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.
(source: Nielsen Book Data)9780471143239 20160528
Engineering Library (Terman), eReserve
EE-216-01
Book
xviii, 581 p. : ill. ; 25 cm.
  • 1 CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS. Semiconductor Materials. Periodic Structures. Crystal Lattices. Cubic Lattices. Planes and Directions. The Diamond Lattice. Bulk Crystal Growth. Starting Materials. Growth of Single Crystal Ingots. Wafers. Doping. Epitaxial Growth. Lattice Matching in Epitaxial Growth. Vapor-Phase Epitaxy. Molecular Beam Epitaxy. 2 ATOMS AND ELECTRONS. Introduction to Physical Models. Experimental Observations. The Photoelectric Effect. Atomic Spectra. The Bohr Model. Quantum Mechanics. Probability and the Uncertainty Principle. The Schrdinger Wave Equation. Potential Well Problem. Tunneling. Atomic Structure and the Periodic Table. The Hydrogen Atom. The Periodic Table. 3 ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS. Bonding Forces and Energy Bands in Solids. Bonding Forces in Solids. Energy Bands. Metals, Semiconductors, and Insulators. Direct and Indirect Semiconductors. Variation of Energy Bands with Alloy Composition. Charge Carriers in Semiconductors. Electrons and Holes. Effective Mass. Intrinsic Material. Extrinsic Material. Electrons and Holes in Quantum Wells. Carrier Concentrations. The Fermi Level. Electron and Hole Concentrations at Equilibrium. Temperature Dependence of Carrier Concentrations. Compensation and Space Charge Neutrality. Drift of Carriers in Electric and Magnetic Fields. Conductivity and Mobility. Drift and Resistance. EFFECTS OF TEMPERATURE AND DOPING ON MOBILITY. High-Field Effects. The Hall Effect. Invariance of the Fermi Level at Equilibrium. 4 EXCESS CARRIERS IN SEMICONDUCTORS. Optical Absorption. Luminescence. Photoluminescence. Electroluminescence. Carrier Lifetime and Photoconductivity. Direct Recombination of Electrons and Holes. Indirect Recombination-- Trapping. Steady State Carrier Generation-- Quasi-Fermi Levels. Photoconductive Devices. Diffusion of Carriers. Diffusion Processes. Diffusion and Drift of Carriers-- Built-in Fields. Diffusion and Recombination-- The Continuity Equation. Steady State Carrier Injection-- Diffusion Length. The Haynes-Shockley Experiment. Gradients in the Quasi-Fermi Levels. 5 JUNCTIONS. Fabrication of p-n Junctions. Thermal Oxidation. Diffusion. Rapid Thermal Processing. Ion Implantation. Chemical Vapor Deposition (CVD). Photolithography. Etching. Metallization. Equilibrium Conditions. The Contact Potential. Equilibrium Fermi Levels. Space Charge at a Junction. Forward- and Reverse-Biased Junctions-- Steady State Conditions. Qualitative Description of Current Flow at a Junction. Carrier Injection. Reverse Bias. Reverse-Bias Breakdown. Zener Breakdown. Avalanche Breakdown. Rectifiers. The Breakdown Diode. Transient and A-C Conditions. Time Variation of Stored Charge. Reverse Recovery Transient. Switching Diodes. Capacitance of p-n Junctions. The Varactor Diode. Deviations from the Simple Theory. Effects of Contact Potential on Carrier Injection. Recombination and Generation in the Transition Region. Ohmic Losses. GRADED JUNCTIONS. Metal-Semiconductor Junctions. Schottky Barriers. Rectifying Contacts. Ohmic Contacts. Typical Schottky Barriers. Heterojunctions. 6 FIELD-EFFECT TRANSISTORS. Transistor Operation. The Load Line. Amplification and Switching. The Junction FET. Pinch-off and Saturation. Gate Control. Current-Voltage Characteristics. The Metal-Semiconductor FET. The GaAs MESFET. The High Electron Mobility Transistor (HEMT). Short Channel Effects. The Metal-Insulator-Semiconductor FET. Basic Operation and Fabrication. The Ideal MOS Capacitor. Effects of Real Surfaces. Threshold Voltage. MOS Capacitance-Voltage Analysis. Time-dependent Capacitance Measurements. Current-Voltage Characteristics of MOS Gate Oxides. The MOS Field-Effect Transistor. Output Characteristics. Transfer Characteristics. Mobility Models. Short Channel MOSFET I-V Characteristics. Control of Threshold Voltage. Substrate Bias Effects. Subthreshold Characteristics. Equivalent Circuit for the MOSFET. MOSFET Scaling and Hot Electron Effects. Drain-Induced Barrier Lowering. Short Channel and Narrow Width Effect. Gate-Induced Drain Leakage. 7 BIPOLAR JUNCTION TRANSISTORS. Fundamentals of BJT Operation. Amplification with BJTs. BJT Fabrication. Minority Carrier Distributions and Terminal Currents. Solution of the Diffusion Equation in the Base Region. Evaluation of the Terminal Currents. Approximations of the Terminal Currents. Current Transfer Ratio. Generalized Biasing. The Coupled-Diode Model. Charge Control Analysis. Switching. Cutoff. Saturation. The Switching Cycle. Specifications for Switching Transistors. Other Important Effects. Drift in the Base Region. Base Narrowing. Avalanche Breakdown. Injection Level-- Thermal Effects. Base Resistance and Emitter Crowding. Gummel-Poon Model. Kirk Effect. Frequency Limitations of Transistors. Capacitance and Charging Times. Transit Time Effects. Webster Effect. High-Frequency Transistors. Heterojunction Bipolar Transistors. 8 OPTOELECTRONIC DEVICES. Photodiodes. Current and Voltage in an Illuminated Junction. Solar Cells. Photodetectors. Noise and Bandwidth of Photodetectors. Light-Emitting Diodes. Light-Emitting Materials. Fiber Optic Communications. Multilayer Heterojunctions for LEDs. Lasers. Semiconductor Lasers. Population Inversion at a Junction. Emission Spectra for p-n Junction Lasers. The Basic Semiconductor Laser. Heterojunction Lasers. Materials for Semiconductor Lasers. 9 INTEGRATED CIRCUITS. Background. Advantages of Integration. Types of Integrated Circuits. Monolithic and Hybrid Circuits. Evolution of Integrated Circuits. Monolithic Device Elements. CMOS Process Integration. Silicon-on-Insulator (SOI). Integration of Other Circuit Elements. Charge Transfer Devices. Dynamic Effects in MOS Capacitors. The Basic CCD. Improvements on the Basic Structure. Applications of CCDs. Ultra Large-Scale Integration (ULSI). Logic Devices. Semiconductor Memories. Testing, Bonding, and Packaging. Testing. Wire Bonding. Flip-Chip Techniques. Packaging. 10. HIGH FREQUENCY AND HIGH POWER DEVICES. Tunnel Diodes: Degenerate Semiconductors. Tunnel diode Operation. Circuit Applications. Transit Time Devices: The IMPATT Diode. Gunn Effect and Related Devices: Transferred Electron Mechanism. Formation and Drift of Space Charge Domains. Fabrication. The p-n-p-n Diode: Basic Structure. Two-Transistor Analogy. Variation of a with Injection. Forward-Blocking State. Conducting State. Triggering Mechanisms. Semiconductor Controlled Rectifier: Gate Control. Turning off the SCR. Bilateral Devices. Fabrication and Applications. Insulated Gate Bipolar Transistor. APPENDICES. Definitions of Commonly Used Symbols. Physical Constants and Conversion Factors. Properties of Semiconductor Materials. Derivation of the Density of States in the Conduction Band. Derivation of Fermi-Dirac Statistics. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature. Solid Solubilities of Impurities in Si. Diffusivities of Dopants in Si and SiO2. Projected Range and Straggle as a Function of Implant Energy in Si. INDEX.
  • (source: Nielsen Book Data)9780131497269 20160528
For undergraduate electrical engineering students or for practicing engineers and scientists, interested in updating their understanding of modern electronics. One of the most widely used introductory books on semiconductor materials, physics, devices and technology, this text aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.
(source: Nielsen Book Data)9780131497269 20160528
Engineering Library (Terman)
EE-216-01
Book
xviii, 528 p. : ill. ; 26 cm.
  • Semiconductor Electronics. Silicon Technology. Metal-Semiconductor Contacts. pn Junctions. Currents in pn Junctions. Bipolar Transistors I: Basic Properties. Bipolar Transistors II: Limitations and Models. Properties of the Metal-Oxide-Silicon System. Mos Field-Effect Transistors I: Physical Effects and Models. Mos Field-Effect Transistors II: High-Field Effects. Answers to Selected Problems. Selected List of Symbols. Index.
  • (source: Nielsen Book Data)9780471428770 20160527
Focusing specifically on silicon devices, the Third Edition of "Device Electronics for Integrated Circuits" takes students in integrated-circuits courses, from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.
(source: Nielsen Book Data)9780471428770 20160527
Engineering Library (Terman)
EE-216-01
Book
xxiii, 792 p. : ill. ; 25 cm.
  • I. SEMICONDUCTOR FUNDAMENTALS. 1. Semiconductors -- A General Introduction. General Material Properties. Crystal Structure. Crystal Growth. 2. Carrier Modeling. The Quantization Concept. Semiconductor Models. Carrier Properties. State and Carrier Distributions. Equilibrium Carrier Concentrations. 3. Carrier Action. Drift. Diffusion. Recombination -- Generation. Equations of State. Supplemental Concepts. 4. Basics of Device Fabrication. Fabrication Processes. Device Fabrication Examples. R1. Part I Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part I Review Problem Sets and Answers. IIA. PN JUNCTION DIODES. 5. PN Junction Electrostatics. Preliminaries. Quantitative Electrostatic Relationships. 6. PN Junction Diode -- I-V Characteristics. The Ideal Diode Equation. Deviations from the Ideal. Special Considerations. 7. PN Junction Diode -- Small-Signal Admittance. Introduction. Reverse-Bias Junction Capacitance. Forward-Bias Diffusion Admittance. 8. PN Junction Diode -- Transient Response. Turn-Off Transient. Turn-On Transient. 9. Optoelectronic Diodes. Introduction. Photodiodes. Solar Cells. LEDs. IIB. BJTS AND OTHER JUNCTION DEVICES. 10. BJT Fundamentals. Terminology. Fabrication. Electrostatics. Introductory Operational Considerations. Performance Parameters. 11. BJT Static Characteristics. Ideal Transistor Analysis. Deviations from the Ideal. Modern BJT Structures. 12. BJT Dynamic Response Modeling. Equivalent Circuits. Transient (Switching) Response. 13. PNPN Devices. Silicon Controlled Rectifier (SCR). SCR Operational Theory. Practical Turn-on/Turn-off Considerations. Other PNPN Devices. 14. MS Contacts and Schottky Diodes. Ideal MS Contacts. Schottky Diode. Practical Contact Considerations. R2. Part II Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part II Review Problem Sets and Answers. III. FIELD EFFECT DEVICES. 15. Field Effect Introduction -- the J-FET and MESFET. General Introduction. J-FET. MESFET. 16. MOS Fundamentals. Ideal Structure Definition. Electrostatics -- Mostly Qualitative. Electrostatics -- Quantitative Formulation. Capacitance-Voltage Characteristics. 17. MOSFETs -- The Essentials. Qualitative Theory of Operation. Quantitative ID - VD Relationships. ac Response. 18. Nonideal MOS. Metal-Semiconductor Workfunction Difference. Oxide Charges. MOSFET Threshold Considerations. 19. Modern FET Structures. Small Dimension Effects. Select Structure Survey. R3. Part III Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part III Review Problem Sets and Answers. Appendix A. Elements of Quantum Mechanics. Appendix B. MOS Semiconductor Electrostatics -- Exact Solution. Appendix C. MOS C-V Supplement. Appendix D. MOS I-Vsupplement. Appendix E. List of Symbols. Appendix M. MATLAB Program Script.
  • (source: Nielsen Book Data)9780131784598 20160527
Although roughly a half-century old, the field of study associated with semiconductor devices continues to be dynamic and exciting. New and improved devices are being developed at an almost frantic pace. While the number of devices in complex integrated circuits increases and the size of chips decreases, semiconductor properties are now being engineered to fit design specifications. Semiconductor Device Fundamentals serves as an excellent introduction to this fascinating field. Based in part on the Modular Series on Solid State Devices, this textbook explains the basic terminology, models, properties, and concepts associated with semiconductors and semiconductor devices. The book provides detailed insight into the internal workings of "building block" device structures and systematically develops the analytical tools needed to solve practical device problems.
(source: Nielsen Book Data)9780131784598 20160527
Engineering Library (Terman)
EE-216-01