- Book
- xxiv, 758 p. : ill. (chiefly col.) ; 24 cm.
- Part I Semiconductor Material Properties Chapter 1: The Crystal Structure of Solids Chapter 2: Introduction to Quantum Mechanics Chapter 3: Introduction to the Quantum Theory of Solids Chapter 4: The Semiconductor in Equilibrium Chapter 5: Carrier Transport Phenomena Chapter 6: Nonequilibrium Excess Carriers in Semiconductors Part II Fundamental Semiconductor Devices Chapter 7: The pn Junction Chapter 8: The pn Junction Diode Chapter 9: Metal-Semiconductor and Semiconductor Heterojunctions Chapter 10: Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor Chapter 11: Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts Chapter 12: The Bipolar Transistor Chapter 13: The Junction Field-Effect Transistor Part III Specialized Semiconductor Devices Chapter 14: Optical Devices Chapter 15: Semiconductor Microwave and Power Devices Appendix A: Selected List of Symbols Appendix B: System of Units, Conversion Factors, and General Constants Appendix C: The Periodic Table Appendix D: Unit of Energy-The Electron-Volt Appendix E: "Derivation" of Schrodinger's Wave Equation Appendix F: Effective Mass Concepts Appendix G: The Error Function Appendix H: Answers to Selected Problems.
- (source: Nielsen Book Data)9780073529585 20160603
(source: Nielsen Book Data)9780073529585 20160603
- Part I Semiconductor Material Properties Chapter 1: The Crystal Structure of Solids Chapter 2: Introduction to Quantum Mechanics Chapter 3: Introduction to the Quantum Theory of Solids Chapter 4: The Semiconductor in Equilibrium Chapter 5: Carrier Transport Phenomena Chapter 6: Nonequilibrium Excess Carriers in Semiconductors Part II Fundamental Semiconductor Devices Chapter 7: The pn Junction Chapter 8: The pn Junction Diode Chapter 9: Metal-Semiconductor and Semiconductor Heterojunctions Chapter 10: Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor Chapter 11: Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts Chapter 12: The Bipolar Transistor Chapter 13: The Junction Field-Effect Transistor Part III Specialized Semiconductor Devices Chapter 14: Optical Devices Chapter 15: Semiconductor Microwave and Power Devices Appendix A: Selected List of Symbols Appendix B: System of Units, Conversion Factors, and General Constants Appendix C: The Periodic Table Appendix D: Unit of Energy-The Electron-Volt Appendix E: "Derivation" of Schrodinger's Wave Equation Appendix F: Effective Mass Concepts Appendix G: The Error Function Appendix H: Answers to Selected Problems.
- (source: Nielsen Book Data)9780073529585 20160603
(source: Nielsen Book Data)9780073529585 20160603
Engineering Library (Terman)
Engineering Library (Terman) | Status |
---|---|
On reserve: Ask at circulation desk | |
QC611 .N39 2012 | Unknown 2-day loan |
EE-216-01
- Course
- EE-216-01 -- Principles and Models of Semiconductor Devices
- Instructor(s)
- Pop, Eric
- Book
- xvii, 335 p. : ill. ; 26 cm.
- Preface-- 1. Introduction-- 2. Energy band basics-- 3. Electron and hole concentrations-- 4. Thermal equilibrium-- 5. Charge transport-- 6. np-and Np-junction basics-- 7. Solar cells-- 8. Light-emitting diodes-- 9. HBT basics-- 10. MOSFET basics-- 11. HJFET basics-- 12. Transistor capacitances-- 13. Transistors for high-speed logic-- 14. Transistors for high frequencies-- 15. Transistors for memories-- 16. Transistors for high power-- 17. Transistors for low noise-- 18. Transistors for the future-- Appendix A. Physical constants-- Appendix B. Selected material properties-- Appendix C. N-MOSFET parameters-- Index.
- (source: Nielsen Book Data)9780521514606 20160604
(source: Nielsen Book Data)9780521514606 20160604
- Preface-- 1. Introduction-- 2. Energy band basics-- 3. Electron and hole concentrations-- 4. Thermal equilibrium-- 5. Charge transport-- 6. np-and Np-junction basics-- 7. Solar cells-- 8. Light-emitting diodes-- 9. HBT basics-- 10. MOSFET basics-- 11. HJFET basics-- 12. Transistor capacitances-- 13. Transistors for high-speed logic-- 14. Transistors for high frequencies-- 15. Transistors for memories-- 16. Transistors for high power-- 17. Transistors for low noise-- 18. Transistors for the future-- Appendix A. Physical constants-- Appendix B. Selected material properties-- Appendix C. N-MOSFET parameters-- Index.
- (source: Nielsen Book Data)9780521514606 20160604
(source: Nielsen Book Data)9780521514606 20160604
Engineering Library (Terman)
Engineering Library (Terman) | Status |
---|---|
On reserve: Ask at circulation desk | |
TK7871.9 .P79 2010 | Unknown 4-hour loan |
EE-216-01
- Course
- EE-216-01 -- Principles and Models of Semiconductor Devices
- Instructor(s)
- Pop, Eric
3. Physics of semiconductor devices [2007]
- Book
- x, 815 p. : ill. ; 25 cm.
- Introduction.Part I Semiconductor Physics.Chapter 1 Physics and Properties of Semiconductors-A Review.1.1 Introduction.1.2 Crystal Structure.1.3 Energy Bands and Energy Gap.1.4 Carrier Concentration at Thermal Equilibrium.1.5 Carrier-Transport Phenomena.1.6 Phonon, Optical, and Thermal Properties.1.7 Heterojunctions and Nanostructures.1.8 Basic Equations and Examples.Part II Device Building Blocks.Chapter 2 p-n Junctions.2.1 Introduction.2.2 Depletion Region.2.3 Current-Voltage Characteristics.2.4 Junction Breakdown.2.5 Transient Behavior and Noise.2.6 Terminal Functions.2.7 Heterojunctions.Chapter 3 Metal-Semiconductor Contacts.3.1 Introduction.3.2 Formation of Barrier.3.3 Current Transport Processes.3.4 Measurement of Barrier Height.3.5 Device Structures.3.6 Ohmic Contact.Chapter 4 Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction.4.2 Ideal MIS Capacitor.4.3 Silicon MOS Capacitor.Part III Transistors.Chapter 5 Bipolar Transistors.5.1 Introduction.5.2 Static Characteristics.5.3 Microwave Characteristics.5.4 Related Device Structures.5.5 Heterojunction Bipolar Transistor.Chapter 6 MOSFETs.6.1 Introduction.6.2 Basic Device Characteristics.6.3 Nonuniform Doping and Buried-Channel Device.6.4 Device Scaling and Short-Channel Effects.6.5 MOSFET Structures.6.6 Circuit Applications.6.7 Nonvolatile Memory Devices.6.8 Single-Electron Transistor.Chapter 7 JFETs, MESFETs, and MODFETs.7.1 Introduction.7.2 JFET and MESFET.7.3 MODFET.Part IV Negative-Resistance and Power Devices.Chapter 8 Tunnel Devices.8.1 Introduction.8.2 Tunnel Diode.8.3 Related Tunnel Devices.8.4 Resonant-Tunneling Diode.Chapter 9 IMPATT Diodes.9.1 Introduction.9.2 Static Characteristics.9.3 Dynamic Characteristics.9.4 Power and Efficiency.9.5 Noise Behavior.9.6 Device Design and Performance.9.7 BARITT Diode.9.8 TUNNETT Diode.Chapter 10 Transferred-Electron and Real-Space-Transfer Devices.10.1 Introduction.10.2 Transferred-Electron Device.10.3 Real-Space-Transfer Devices.Chapter 11 Thyristors and Power Devices.11.1 Introduction.11.2 Thyristor Characteristics.1 1.3 Thyristor Variations.11.4 Other Power Devices.Part V Photonic Devices and Sensors.Chapter 12 LEDs and Lasers.12.1 Introduction.12.2 Radiative Transitions.12.3 Light-Emitting Diode (LED).12.4 Laser Physics.12.5 Laser Operating Characteristics.12.6 Specialty Lasers.Chapter 13 Photodetectors and Solar Cells.13.1 Introduction.13.2 Photoconductor.13.3 Photodiodes.13.4 Avalanche Photodiode.13.5 Phototransistor.13.6 Charge-Coupled Device (CCD).13.7 Metal-Semiconductor-Metal Photodetector.13.8 Quantum-Well Infrared Photodetector.13.9 Solar Cell.Chapter 14 Sensors.14.1 Introduction.14.2 Thermal Sensors.14.3 Mechanical Sensors.14.4 Magnetic Sensors.14.5 Chemical Sensors.Appendixes.A. List of Symbols.B. International System of Units.C. Unit Prefixes.D. Greek Alphabet.E. Physical Constants.F. Properties of Important Semiconductors.G. Properties of Si and GaAs.H. Properties of SiO, and Si3N.Index.
- (source: Nielsen Book Data)9780471143239 20160528
(source: Nielsen Book Data)9780471143239 20160528
- Introduction.Part I Semiconductor Physics.Chapter 1 Physics and Properties of Semiconductors-A Review.1.1 Introduction.1.2 Crystal Structure.1.3 Energy Bands and Energy Gap.1.4 Carrier Concentration at Thermal Equilibrium.1.5 Carrier-Transport Phenomena.1.6 Phonon, Optical, and Thermal Properties.1.7 Heterojunctions and Nanostructures.1.8 Basic Equations and Examples.Part II Device Building Blocks.Chapter 2 p-n Junctions.2.1 Introduction.2.2 Depletion Region.2.3 Current-Voltage Characteristics.2.4 Junction Breakdown.2.5 Transient Behavior and Noise.2.6 Terminal Functions.2.7 Heterojunctions.Chapter 3 Metal-Semiconductor Contacts.3.1 Introduction.3.2 Formation of Barrier.3.3 Current Transport Processes.3.4 Measurement of Barrier Height.3.5 Device Structures.3.6 Ohmic Contact.Chapter 4 Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction.4.2 Ideal MIS Capacitor.4.3 Silicon MOS Capacitor.Part III Transistors.Chapter 5 Bipolar Transistors.5.1 Introduction.5.2 Static Characteristics.5.3 Microwave Characteristics.5.4 Related Device Structures.5.5 Heterojunction Bipolar Transistor.Chapter 6 MOSFETs.6.1 Introduction.6.2 Basic Device Characteristics.6.3 Nonuniform Doping and Buried-Channel Device.6.4 Device Scaling and Short-Channel Effects.6.5 MOSFET Structures.6.6 Circuit Applications.6.7 Nonvolatile Memory Devices.6.8 Single-Electron Transistor.Chapter 7 JFETs, MESFETs, and MODFETs.7.1 Introduction.7.2 JFET and MESFET.7.3 MODFET.Part IV Negative-Resistance and Power Devices.Chapter 8 Tunnel Devices.8.1 Introduction.8.2 Tunnel Diode.8.3 Related Tunnel Devices.8.4 Resonant-Tunneling Diode.Chapter 9 IMPATT Diodes.9.1 Introduction.9.2 Static Characteristics.9.3 Dynamic Characteristics.9.4 Power and Efficiency.9.5 Noise Behavior.9.6 Device Design and Performance.9.7 BARITT Diode.9.8 TUNNETT Diode.Chapter 10 Transferred-Electron and Real-Space-Transfer Devices.10.1 Introduction.10.2 Transferred-Electron Device.10.3 Real-Space-Transfer Devices.Chapter 11 Thyristors and Power Devices.11.1 Introduction.11.2 Thyristor Characteristics.1 1.3 Thyristor Variations.11.4 Other Power Devices.Part V Photonic Devices and Sensors.Chapter 12 LEDs and Lasers.12.1 Introduction.12.2 Radiative Transitions.12.3 Light-Emitting Diode (LED).12.4 Laser Physics.12.5 Laser Operating Characteristics.12.6 Specialty Lasers.Chapter 13 Photodetectors and Solar Cells.13.1 Introduction.13.2 Photoconductor.13.3 Photodiodes.13.4 Avalanche Photodiode.13.5 Phototransistor.13.6 Charge-Coupled Device (CCD).13.7 Metal-Semiconductor-Metal Photodetector.13.8 Quantum-Well Infrared Photodetector.13.9 Solar Cell.Chapter 14 Sensors.14.1 Introduction.14.2 Thermal Sensors.14.3 Mechanical Sensors.14.4 Magnetic Sensors.14.5 Chemical Sensors.Appendixes.A. List of Symbols.B. International System of Units.C. Unit Prefixes.D. Greek Alphabet.E. Physical Constants.F. Properties of Important Semiconductors.G. Properties of Si and GaAs.H. Properties of SiO, and Si3N.Index.
- (source: Nielsen Book Data)9780471143239 20160528
(source: Nielsen Book Data)9780471143239 20160528
Engineering Library (Terman)
Engineering Library (Terman) | Status |
---|---|
On reserve: Ask at circulation desk | |
TK7871.85 .S988 2007 | Unknown 3-day loan |
TK7871.85 .S988 2007 | Unknown 3-day loan |
TK7871.85 .S988 2007 | Unknown 3-day loan |
TK7871.85 .S988 2007 | Unknown 3-day loan |
EE-216-01
- Course
- EE-216-01 -- Principles and Models of Semiconductor Devices
- Instructor(s)
- Pop, Eric
4. Solid state electronic devices [2006]
- Book
- xviii, 581 p. : ill. ; 25 cm.
- 1 CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS. Semiconductor Materials. Periodic Structures. Crystal Lattices. Cubic Lattices. Planes and Directions. The Diamond Lattice. Bulk Crystal Growth. Starting Materials. Growth of Single Crystal Ingots. Wafers. Doping. Epitaxial Growth. Lattice Matching in Epitaxial Growth. Vapor-Phase Epitaxy. Molecular Beam Epitaxy. 2 ATOMS AND ELECTRONS. Introduction to Physical Models. Experimental Observations. The Photoelectric Effect. Atomic Spectra. The Bohr Model. Quantum Mechanics. Probability and the Uncertainty Principle. The Schrdinger Wave Equation. Potential Well Problem. Tunneling. Atomic Structure and the Periodic Table. The Hydrogen Atom. The Periodic Table. 3 ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS. Bonding Forces and Energy Bands in Solids. Bonding Forces in Solids. Energy Bands. Metals, Semiconductors, and Insulators. Direct and Indirect Semiconductors. Variation of Energy Bands with Alloy Composition. Charge Carriers in Semiconductors. Electrons and Holes. Effective Mass. Intrinsic Material. Extrinsic Material. Electrons and Holes in Quantum Wells. Carrier Concentrations. The Fermi Level. Electron and Hole Concentrations at Equilibrium. Temperature Dependence of Carrier Concentrations. Compensation and Space Charge Neutrality. Drift of Carriers in Electric and Magnetic Fields. Conductivity and Mobility. Drift and Resistance. EFFECTS OF TEMPERATURE AND DOPING ON MOBILITY. High-Field Effects. The Hall Effect. Invariance of the Fermi Level at Equilibrium. 4 EXCESS CARRIERS IN SEMICONDUCTORS. Optical Absorption. Luminescence. Photoluminescence. Electroluminescence. Carrier Lifetime and Photoconductivity. Direct Recombination of Electrons and Holes. Indirect Recombination-- Trapping. Steady State Carrier Generation-- Quasi-Fermi Levels. Photoconductive Devices. Diffusion of Carriers. Diffusion Processes. Diffusion and Drift of Carriers-- Built-in Fields. Diffusion and Recombination-- The Continuity Equation. Steady State Carrier Injection-- Diffusion Length. The Haynes-Shockley Experiment. Gradients in the Quasi-Fermi Levels. 5 JUNCTIONS. Fabrication of p-n Junctions. Thermal Oxidation. Diffusion. Rapid Thermal Processing. Ion Implantation. Chemical Vapor Deposition (CVD). Photolithography. Etching. Metallization. Equilibrium Conditions. The Contact Potential. Equilibrium Fermi Levels. Space Charge at a Junction. Forward- and Reverse-Biased Junctions-- Steady State Conditions. Qualitative Description of Current Flow at a Junction. Carrier Injection. Reverse Bias. Reverse-Bias Breakdown. Zener Breakdown. Avalanche Breakdown. Rectifiers. The Breakdown Diode. Transient and A-C Conditions. Time Variation of Stored Charge. Reverse Recovery Transient. Switching Diodes. Capacitance of p-n Junctions. The Varactor Diode. Deviations from the Simple Theory. Effects of Contact Potential on Carrier Injection. Recombination and Generation in the Transition Region. Ohmic Losses. GRADED JUNCTIONS. Metal-Semiconductor Junctions. Schottky Barriers. Rectifying Contacts. Ohmic Contacts. Typical Schottky Barriers. Heterojunctions. 6 FIELD-EFFECT TRANSISTORS. Transistor Operation. The Load Line. Amplification and Switching. The Junction FET. Pinch-off and Saturation. Gate Control. Current-Voltage Characteristics. The Metal-Semiconductor FET. The GaAs MESFET. The High Electron Mobility Transistor (HEMT). Short Channel Effects. The Metal-Insulator-Semiconductor FET. Basic Operation and Fabrication. The Ideal MOS Capacitor. Effects of Real Surfaces. Threshold Voltage. MOS Capacitance-Voltage Analysis. Time-dependent Capacitance Measurements. Current-Voltage Characteristics of MOS Gate Oxides. The MOS Field-Effect Transistor. Output Characteristics. Transfer Characteristics. Mobility Models. Short Channel MOSFET I-V Characteristics. Control of Threshold Voltage. Substrate Bias Effects. Subthreshold Characteristics. Equivalent Circuit for the MOSFET. MOSFET Scaling and Hot Electron Effects. Drain-Induced Barrier Lowering. Short Channel and Narrow Width Effect. Gate-Induced Drain Leakage. 7 BIPOLAR JUNCTION TRANSISTORS. Fundamentals of BJT Operation. Amplification with BJTs. BJT Fabrication. Minority Carrier Distributions and Terminal Currents. Solution of the Diffusion Equation in the Base Region. Evaluation of the Terminal Currents. Approximations of the Terminal Currents. Current Transfer Ratio. Generalized Biasing. The Coupled-Diode Model. Charge Control Analysis. Switching. Cutoff. Saturation. The Switching Cycle. Specifications for Switching Transistors. Other Important Effects. Drift in the Base Region. Base Narrowing. Avalanche Breakdown. Injection Level-- Thermal Effects. Base Resistance and Emitter Crowding. Gummel-Poon Model. Kirk Effect. Frequency Limitations of Transistors. Capacitance and Charging Times. Transit Time Effects. Webster Effect. High-Frequency Transistors. Heterojunction Bipolar Transistors. 8 OPTOELECTRONIC DEVICES. Photodiodes. Current and Voltage in an Illuminated Junction. Solar Cells. Photodetectors. Noise and Bandwidth of Photodetectors. Light-Emitting Diodes. Light-Emitting Materials. Fiber Optic Communications. Multilayer Heterojunctions for LEDs. Lasers. Semiconductor Lasers. Population Inversion at a Junction. Emission Spectra for p-n Junction Lasers. The Basic Semiconductor Laser. Heterojunction Lasers. Materials for Semiconductor Lasers. 9 INTEGRATED CIRCUITS. Background. Advantages of Integration. Types of Integrated Circuits. Monolithic and Hybrid Circuits. Evolution of Integrated Circuits. Monolithic Device Elements. CMOS Process Integration. Silicon-on-Insulator (SOI). Integration of Other Circuit Elements. Charge Transfer Devices. Dynamic Effects in MOS Capacitors. The Basic CCD. Improvements on the Basic Structure. Applications of CCDs. Ultra Large-Scale Integration (ULSI). Logic Devices. Semiconductor Memories. Testing, Bonding, and Packaging. Testing. Wire Bonding. Flip-Chip Techniques. Packaging. 10. HIGH FREQUENCY AND HIGH POWER DEVICES. Tunnel Diodes: Degenerate Semiconductors. Tunnel diode Operation. Circuit Applications. Transit Time Devices: The IMPATT Diode. Gunn Effect and Related Devices: Transferred Electron Mechanism. Formation and Drift of Space Charge Domains. Fabrication. The p-n-p-n Diode: Basic Structure. Two-Transistor Analogy. Variation of a with Injection. Forward-Blocking State. Conducting State. Triggering Mechanisms. Semiconductor Controlled Rectifier: Gate Control. Turning off the SCR. Bilateral Devices. Fabrication and Applications. Insulated Gate Bipolar Transistor. APPENDICES. Definitions of Commonly Used Symbols. Physical Constants and Conversion Factors. Properties of Semiconductor Materials. Derivation of the Density of States in the Conduction Band. Derivation of Fermi-Dirac Statistics. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature. Solid Solubilities of Impurities in Si. Diffusivities of Dopants in Si and SiO2. Projected Range and Straggle as a Function of Implant Energy in Si. INDEX.
- (source: Nielsen Book Data)9780131497269 20160528
(source: Nielsen Book Data)9780131497269 20160528
- 1 CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS. Semiconductor Materials. Periodic Structures. Crystal Lattices. Cubic Lattices. Planes and Directions. The Diamond Lattice. Bulk Crystal Growth. Starting Materials. Growth of Single Crystal Ingots. Wafers. Doping. Epitaxial Growth. Lattice Matching in Epitaxial Growth. Vapor-Phase Epitaxy. Molecular Beam Epitaxy. 2 ATOMS AND ELECTRONS. Introduction to Physical Models. Experimental Observations. The Photoelectric Effect. Atomic Spectra. The Bohr Model. Quantum Mechanics. Probability and the Uncertainty Principle. The Schrdinger Wave Equation. Potential Well Problem. Tunneling. Atomic Structure and the Periodic Table. The Hydrogen Atom. The Periodic Table. 3 ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS. Bonding Forces and Energy Bands in Solids. Bonding Forces in Solids. Energy Bands. Metals, Semiconductors, and Insulators. Direct and Indirect Semiconductors. Variation of Energy Bands with Alloy Composition. Charge Carriers in Semiconductors. Electrons and Holes. Effective Mass. Intrinsic Material. Extrinsic Material. Electrons and Holes in Quantum Wells. Carrier Concentrations. The Fermi Level. Electron and Hole Concentrations at Equilibrium. Temperature Dependence of Carrier Concentrations. Compensation and Space Charge Neutrality. Drift of Carriers in Electric and Magnetic Fields. Conductivity and Mobility. Drift and Resistance. EFFECTS OF TEMPERATURE AND DOPING ON MOBILITY. High-Field Effects. The Hall Effect. Invariance of the Fermi Level at Equilibrium. 4 EXCESS CARRIERS IN SEMICONDUCTORS. Optical Absorption. Luminescence. Photoluminescence. Electroluminescence. Carrier Lifetime and Photoconductivity. Direct Recombination of Electrons and Holes. Indirect Recombination-- Trapping. Steady State Carrier Generation-- Quasi-Fermi Levels. Photoconductive Devices. Diffusion of Carriers. Diffusion Processes. Diffusion and Drift of Carriers-- Built-in Fields. Diffusion and Recombination-- The Continuity Equation. Steady State Carrier Injection-- Diffusion Length. The Haynes-Shockley Experiment. Gradients in the Quasi-Fermi Levels. 5 JUNCTIONS. Fabrication of p-n Junctions. Thermal Oxidation. Diffusion. Rapid Thermal Processing. Ion Implantation. Chemical Vapor Deposition (CVD). Photolithography. Etching. Metallization. Equilibrium Conditions. The Contact Potential. Equilibrium Fermi Levels. Space Charge at a Junction. Forward- and Reverse-Biased Junctions-- Steady State Conditions. Qualitative Description of Current Flow at a Junction. Carrier Injection. Reverse Bias. Reverse-Bias Breakdown. Zener Breakdown. Avalanche Breakdown. Rectifiers. The Breakdown Diode. Transient and A-C Conditions. Time Variation of Stored Charge. Reverse Recovery Transient. Switching Diodes. Capacitance of p-n Junctions. The Varactor Diode. Deviations from the Simple Theory. Effects of Contact Potential on Carrier Injection. Recombination and Generation in the Transition Region. Ohmic Losses. GRADED JUNCTIONS. Metal-Semiconductor Junctions. Schottky Barriers. Rectifying Contacts. Ohmic Contacts. Typical Schottky Barriers. Heterojunctions. 6 FIELD-EFFECT TRANSISTORS. Transistor Operation. The Load Line. Amplification and Switching. The Junction FET. Pinch-off and Saturation. Gate Control. Current-Voltage Characteristics. The Metal-Semiconductor FET. The GaAs MESFET. The High Electron Mobility Transistor (HEMT). Short Channel Effects. The Metal-Insulator-Semiconductor FET. Basic Operation and Fabrication. The Ideal MOS Capacitor. Effects of Real Surfaces. Threshold Voltage. MOS Capacitance-Voltage Analysis. Time-dependent Capacitance Measurements. Current-Voltage Characteristics of MOS Gate Oxides. The MOS Field-Effect Transistor. Output Characteristics. Transfer Characteristics. Mobility Models. Short Channel MOSFET I-V Characteristics. Control of Threshold Voltage. Substrate Bias Effects. Subthreshold Characteristics. Equivalent Circuit for the MOSFET. MOSFET Scaling and Hot Electron Effects. Drain-Induced Barrier Lowering. Short Channel and Narrow Width Effect. Gate-Induced Drain Leakage. 7 BIPOLAR JUNCTION TRANSISTORS. Fundamentals of BJT Operation. Amplification with BJTs. BJT Fabrication. Minority Carrier Distributions and Terminal Currents. Solution of the Diffusion Equation in the Base Region. Evaluation of the Terminal Currents. Approximations of the Terminal Currents. Current Transfer Ratio. Generalized Biasing. The Coupled-Diode Model. Charge Control Analysis. Switching. Cutoff. Saturation. The Switching Cycle. Specifications for Switching Transistors. Other Important Effects. Drift in the Base Region. Base Narrowing. Avalanche Breakdown. Injection Level-- Thermal Effects. Base Resistance and Emitter Crowding. Gummel-Poon Model. Kirk Effect. Frequency Limitations of Transistors. Capacitance and Charging Times. Transit Time Effects. Webster Effect. High-Frequency Transistors. Heterojunction Bipolar Transistors. 8 OPTOELECTRONIC DEVICES. Photodiodes. Current and Voltage in an Illuminated Junction. Solar Cells. Photodetectors. Noise and Bandwidth of Photodetectors. Light-Emitting Diodes. Light-Emitting Materials. Fiber Optic Communications. Multilayer Heterojunctions for LEDs. Lasers. Semiconductor Lasers. Population Inversion at a Junction. Emission Spectra for p-n Junction Lasers. The Basic Semiconductor Laser. Heterojunction Lasers. Materials for Semiconductor Lasers. 9 INTEGRATED CIRCUITS. Background. Advantages of Integration. Types of Integrated Circuits. Monolithic and Hybrid Circuits. Evolution of Integrated Circuits. Monolithic Device Elements. CMOS Process Integration. Silicon-on-Insulator (SOI). Integration of Other Circuit Elements. Charge Transfer Devices. Dynamic Effects in MOS Capacitors. The Basic CCD. Improvements on the Basic Structure. Applications of CCDs. Ultra Large-Scale Integration (ULSI). Logic Devices. Semiconductor Memories. Testing, Bonding, and Packaging. Testing. Wire Bonding. Flip-Chip Techniques. Packaging. 10. HIGH FREQUENCY AND HIGH POWER DEVICES. Tunnel Diodes: Degenerate Semiconductors. Tunnel diode Operation. Circuit Applications. Transit Time Devices: The IMPATT Diode. Gunn Effect and Related Devices: Transferred Electron Mechanism. Formation and Drift of Space Charge Domains. Fabrication. The p-n-p-n Diode: Basic Structure. Two-Transistor Analogy. Variation of a with Injection. Forward-Blocking State. Conducting State. Triggering Mechanisms. Semiconductor Controlled Rectifier: Gate Control. Turning off the SCR. Bilateral Devices. Fabrication and Applications. Insulated Gate Bipolar Transistor. APPENDICES. Definitions of Commonly Used Symbols. Physical Constants and Conversion Factors. Properties of Semiconductor Materials. Derivation of the Density of States in the Conduction Band. Derivation of Fermi-Dirac Statistics. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature. Solid Solubilities of Impurities in Si. Diffusivities of Dopants in Si and SiO2. Projected Range and Straggle as a Function of Implant Energy in Si. INDEX.
- (source: Nielsen Book Data)9780131497269 20160528
(source: Nielsen Book Data)9780131497269 20160528
Engineering Library (Terman)
Engineering Library (Terman) | Status |
---|---|
On reserve: Ask at circulation desk | |
TK7871.85 .S77 2006 | Unknown 2-hour loan |
TK7871.85 .S77 2006 | In-library use 2-hour loan |
EE-216-01
- Course
- EE-216-01 -- Principles and Models of Semiconductor Devices
- Instructor(s)
- Pop, Eric
- Book
- xviii, 528 p. : ill. ; 26 cm.
- Semiconductor Electronics. Silicon Technology. Metal-Semiconductor Contacts. pn Junctions. Currents in pn Junctions. Bipolar Transistors I: Basic Properties. Bipolar Transistors II: Limitations and Models. Properties of the Metal-Oxide-Silicon System. Mos Field-Effect Transistors I: Physical Effects and Models. Mos Field-Effect Transistors II: High-Field Effects. Answers to Selected Problems. Selected List of Symbols. Index.
- (source: Nielsen Book Data)9780471428770 20160527
(source: Nielsen Book Data)9780471428770 20160527
- Semiconductor Electronics. Silicon Technology. Metal-Semiconductor Contacts. pn Junctions. Currents in pn Junctions. Bipolar Transistors I: Basic Properties. Bipolar Transistors II: Limitations and Models. Properties of the Metal-Oxide-Silicon System. Mos Field-Effect Transistors I: Physical Effects and Models. Mos Field-Effect Transistors II: High-Field Effects. Answers to Selected Problems. Selected List of Symbols. Index.
- (source: Nielsen Book Data)9780471428770 20160527
(source: Nielsen Book Data)9780471428770 20160527
Engineering Library (Terman)
Engineering Library (Terman) | Status |
---|---|
On reserve: Ask at circulation desk | |
TK7871.85 .M86 2003 | In-library use 2-day loan |
TK7871.85 .M86 2003 | Unknown 2-day loan |
EE-216-01
- Course
- EE-216-01 -- Principles and Models of Semiconductor Devices
- Instructor(s)
- Pop, Eric
6. Semiconductor device fundamentals [1996]
- Book
- xxiii, 792 p. : ill. ; 25 cm.
- I. SEMICONDUCTOR FUNDAMENTALS. 1. Semiconductors -- A General Introduction. General Material Properties. Crystal Structure. Crystal Growth. 2. Carrier Modeling. The Quantization Concept. Semiconductor Models. Carrier Properties. State and Carrier Distributions. Equilibrium Carrier Concentrations. 3. Carrier Action. Drift. Diffusion. Recombination -- Generation. Equations of State. Supplemental Concepts. 4. Basics of Device Fabrication. Fabrication Processes. Device Fabrication Examples. R1. Part I Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part I Review Problem Sets and Answers. IIA. PN JUNCTION DIODES. 5. PN Junction Electrostatics. Preliminaries. Quantitative Electrostatic Relationships. 6. PN Junction Diode -- I-V Characteristics. The Ideal Diode Equation. Deviations from the Ideal. Special Considerations. 7. PN Junction Diode -- Small-Signal Admittance. Introduction. Reverse-Bias Junction Capacitance. Forward-Bias Diffusion Admittance. 8. PN Junction Diode -- Transient Response. Turn-Off Transient. Turn-On Transient. 9. Optoelectronic Diodes. Introduction. Photodiodes. Solar Cells. LEDs. IIB. BJTS AND OTHER JUNCTION DEVICES. 10. BJT Fundamentals. Terminology. Fabrication. Electrostatics. Introductory Operational Considerations. Performance Parameters. 11. BJT Static Characteristics. Ideal Transistor Analysis. Deviations from the Ideal. Modern BJT Structures. 12. BJT Dynamic Response Modeling. Equivalent Circuits. Transient (Switching) Response. 13. PNPN Devices. Silicon Controlled Rectifier (SCR). SCR Operational Theory. Practical Turn-on/Turn-off Considerations. Other PNPN Devices. 14. MS Contacts and Schottky Diodes. Ideal MS Contacts. Schottky Diode. Practical Contact Considerations. R2. Part II Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part II Review Problem Sets and Answers. III. FIELD EFFECT DEVICES. 15. Field Effect Introduction -- the J-FET and MESFET. General Introduction. J-FET. MESFET. 16. MOS Fundamentals. Ideal Structure Definition. Electrostatics -- Mostly Qualitative. Electrostatics -- Quantitative Formulation. Capacitance-Voltage Characteristics. 17. MOSFETs -- The Essentials. Qualitative Theory of Operation. Quantitative ID - VD Relationships. ac Response. 18. Nonideal MOS. Metal-Semiconductor Workfunction Difference. Oxide Charges. MOSFET Threshold Considerations. 19. Modern FET Structures. Small Dimension Effects. Select Structure Survey. R3. Part III Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part III Review Problem Sets and Answers. Appendix A. Elements of Quantum Mechanics. Appendix B. MOS Semiconductor Electrostatics -- Exact Solution. Appendix C. MOS C-V Supplement. Appendix D. MOS I-Vsupplement. Appendix E. List of Symbols. Appendix M. MATLAB Program Script.
- (source: Nielsen Book Data)9780131784598 20160527
(source: Nielsen Book Data)9780131784598 20160527
- I. SEMICONDUCTOR FUNDAMENTALS. 1. Semiconductors -- A General Introduction. General Material Properties. Crystal Structure. Crystal Growth. 2. Carrier Modeling. The Quantization Concept. Semiconductor Models. Carrier Properties. State and Carrier Distributions. Equilibrium Carrier Concentrations. 3. Carrier Action. Drift. Diffusion. Recombination -- Generation. Equations of State. Supplemental Concepts. 4. Basics of Device Fabrication. Fabrication Processes. Device Fabrication Examples. R1. Part I Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part I Review Problem Sets and Answers. IIA. PN JUNCTION DIODES. 5. PN Junction Electrostatics. Preliminaries. Quantitative Electrostatic Relationships. 6. PN Junction Diode -- I-V Characteristics. The Ideal Diode Equation. Deviations from the Ideal. Special Considerations. 7. PN Junction Diode -- Small-Signal Admittance. Introduction. Reverse-Bias Junction Capacitance. Forward-Bias Diffusion Admittance. 8. PN Junction Diode -- Transient Response. Turn-Off Transient. Turn-On Transient. 9. Optoelectronic Diodes. Introduction. Photodiodes. Solar Cells. LEDs. IIB. BJTS AND OTHER JUNCTION DEVICES. 10. BJT Fundamentals. Terminology. Fabrication. Electrostatics. Introductory Operational Considerations. Performance Parameters. 11. BJT Static Characteristics. Ideal Transistor Analysis. Deviations from the Ideal. Modern BJT Structures. 12. BJT Dynamic Response Modeling. Equivalent Circuits. Transient (Switching) Response. 13. PNPN Devices. Silicon Controlled Rectifier (SCR). SCR Operational Theory. Practical Turn-on/Turn-off Considerations. Other PNPN Devices. 14. MS Contacts and Schottky Diodes. Ideal MS Contacts. Schottky Diode. Practical Contact Considerations. R2. Part II Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part II Review Problem Sets and Answers. III. FIELD EFFECT DEVICES. 15. Field Effect Introduction -- the J-FET and MESFET. General Introduction. J-FET. MESFET. 16. MOS Fundamentals. Ideal Structure Definition. Electrostatics -- Mostly Qualitative. Electrostatics -- Quantitative Formulation. Capacitance-Voltage Characteristics. 17. MOSFETs -- The Essentials. Qualitative Theory of Operation. Quantitative ID - VD Relationships. ac Response. 18. Nonideal MOS. Metal-Semiconductor Workfunction Difference. Oxide Charges. MOSFET Threshold Considerations. 19. Modern FET Structures. Small Dimension Effects. Select Structure Survey. R3. Part III Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part III Review Problem Sets and Answers. Appendix A. Elements of Quantum Mechanics. Appendix B. MOS Semiconductor Electrostatics -- Exact Solution. Appendix C. MOS C-V Supplement. Appendix D. MOS I-Vsupplement. Appendix E. List of Symbols. Appendix M. MATLAB Program Script.
- (source: Nielsen Book Data)9780131784598 20160527
(source: Nielsen Book Data)9780131784598 20160527
Engineering Library (Terman)
Engineering Library (Terman) | Status |
---|---|
On reserve: Ask at circulation desk | |
TK7871.85 .P484 1996 | Unknown 4-hour loan |
TK7871.85 .P484 1996 | In-library use 4-hour loan |
EE-216-01
- Course
- EE-216-01 -- Principles and Models of Semiconductor Devices
- Instructor(s)
- Pop, Eric