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Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Techniques et équipements généraux, General equipment and techniques, Capteurs (chimiques, optiques, électriques, de mouvement, de gaz, etc.); télédétection, Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Dispositifs à images, Imaging devices, Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Convertisseurs de signal, Signal convertors, Assemblage circuit intégré, Integrated circuit bonding, Capteur image CMOS, CMOS image sensors, Capteur mesure, Measurement sensor, Captador medida, Circuit intégré, Integrated circuit, Circuito integrado, Contact bosse, Solder bump, Contacto con bollos, Convertisseur AN, AD converter, Convertidor AN, Cuivre, Copper, Cobre, Echantillonnage, Sampling, Muestreo, Empilement, Stacking, Apilamiento, Haute performance, High performance, Alto rendimiento, Image tridimensionnelle, Tridimensional image, Imagen tridimensional, Interconnexion, Interconnection, Interconexión, Matrice formage, Die, Matriz formadora, Multifonctionnalité, Multifunctionality, Multifuncionalidad, Prototypage rapide, Rapid prototyping, Prototipificación rápida, Prototype, Prototipo, Silicium, Silicon, Silicio, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Surface arrière, Back surface, Superficie atrás, Système intégré, Integrated system, Sistema integrado, Trou interconnexion, Via hole, Agujero interconexión, 0707D, Backside through silicon via (TSV), die-level 3-D integration, and hetero-integrated system

We proposed a die-level 3-D integration technology for rapid prototyping of high-performance multifunctionality hetero-integrated systems. Commercially available 2-D chips with different functions and sizes could be processed and integrated in die level. To realize the die-level 3-D integration, fine-sized backside through silicon via (TSV) and novel detachable technologies are developed. In this paper, we demonstrated a prototype 3-D stacked image sensor system using the die-level 3-D integration technology. Three different functional chips of CMOS image sensor, correlated double sampling, and analog-to-digital converter, which were fabricated by different technologies, were processed to form fine-sized backside Cu TSV of 5-μm diameter and metal microbumps in die level. Each chip was sequentially stacked after evaluating the basic function to form a known-good-die 3-D stacked system. The fundamental characteristics of each functional chip were successfully evaluated in the fabricated prototype 3-D stacked image sensor system.