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Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Diodes, Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Circuits de commutation, de multiplexage, à capacités commutées, Switching, multiplexing, switched capacity circuits, Anode, Anodo, Autocommutateur, Switching system, Autoconmutador, Cathode, Cátodo, Champ intense, High field, Campo intenso, Champ électrique, Electric field, Campo eléctrico, Commutation, Switching, Conmutación, Diode, Diodo, Emetteur, Transmitter, Emisor, Etude comparative, Comparative study, Estudio comparativo, Evaluation performance, Performance evaluation, Evaluación prestación, Implémentation, Implementation, Implementación, Matériau dopé, Doped materials, Rigidité diélectrique, Dielectric strength, Resistencia dieléctrica, Semiconducteur type p, p type semiconductor, Semiconductor tipo p, Surface arrière, Back surface, Superficie atrás, Transitoire électrique, and Electrical transients

The surge-current ruggedness of free-wheeling diodes can be improved by implementing the self-adjusting p emitter efficiency diode concept (SPEED). Simulations indicate that the switching ruggedness is reduced because of the occurrence of cathode-side filaments during reverse-recovery. Experiments confirm the weak switching performance of such a diode in comparison to a conventional diode. By implementing the controlled injection of backside holes concept cathode-side filaments can be suppressed. However, this measure is not sufficient to regain the switching ruggedness of a conventional diode. It is also necessary to fully embed the p+-areas of the SPEED anode in the low-doped p-type area to avoid high electrical field strengths at the p+p-junction and pinning of anode-side filaments. However, anode-side adjustments for improving the switching ruggedness can reduce the benefit of the SPEED concept regarding the surge-current capability.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structures de basse dimensionnalité (superréseaux, puits quantiques, multicouches): structure et propriétés non électroniques, Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Verres (incluant les verres métalliques), Glasses (including metallic glasses), Méthodes de nanofabrication, Methods of nanofabrication, Nanolithographie, Nanolithography, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Epaisseur, Thickness, Espesor, Epoxyde résine, Epoxy resin, Epóxido resina, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Lithographie, Lithography, Litografía, Microstructure, Microestructura, Méthode double exposition, Double exposure method, Método doble exposición, Norme, Standards, Norma, Photorésist, Photoresist, Fotorresistencia, Polymère photosensible, Light sensitive polymer, Polímero fotosensible, Revêtement protecteur, Protective coatings, Revestimiento protector, Résist négatif, Negative resist, Resistencia negativa, Surface arrière, Back surface, Superficie atrás, Verre, Glass, Vidrio, 8105K, 8116N, 8540H, Méthode exposition multiple, Multiple exposure method, Método de exposición múltiple, 3D microstructure, Double-side exposure, Embedded, Partial exposure, and SU-8

Here a double-side multiple partial exposure (DoMPE) method is proposed to fabricate an embedded SU-8 microstructure with more flexible inside cross section. The proposed method uses standard lithography equipment and needs only single-layer coating of negative photoresist SU-8 on glass substrate without bonding process. Process parameters, including development thickness at different front and back-side partial exposure doses, are experimentally characterized. Reflection effect due to Cr layer on glass substrate is shown to have influence on the development depth of SU-8 in front partial exposure. It is found that coating thicker SU-8 not only can reduce reflection effect, but also can attenuate cross-link effect due to exposure dose accumulation on SU-8 from both front and back sides. Finally, an embedded SU-8 microstructure is demonstrated to verify that the proposed DoMPE method needs only single-layer SU-8 coating to fabricate not just embedded microstructures, but also embedded microstructure with asymmetric inside cross section.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Interfaces, Dispositifs à structure composée, Compound structure devices, Diodes, Caractéristique courant tension, Voltage current curve, Característica corriente tensión, Caractéristique thermique, Thermal characteristic, Característica térmica, Carbure de silicium, Silicon carbide, Silicio carburo, Contact ohmique, Ohmic contact, Contacto óhmico, Contact électrique, Electric contact, Contacto eléctrico, Diode, Diodo, Diélectrique permittivité élevée, High k dielectric, Dieléctrico alta constante dieléctrica, Essai haute température, High temperature test, Prueba alta temperatura, Fiabilité, Reliability, Fiabilidad, Haute température, High temperature, Alta temperatura, Idéalité, Ideality, Idealidad, Intervalle temps, Time interval, Intervalo tiempo, Jonction p n, p n junction, Unión p n, Oxydation, Oxidation, Oxidación, Résistance série, Series resistance, Resistencia en serie, Siliciure de nickel, Nickel silicide, Níquel siliciuro, Surface arrière, Back surface, Superficie atrás, Vieillissement, Ageing, Envejecimiento, NiPt, NiSi, SiC, High temperature I―V characteristic of SiC diode, Ni ohmic contact, and SiC diode

This paper reports the high temperature test results of SiC p―n junction diode up to 873 K. No significant change in diode series resistance (Rs) and a diode ideality factor of 1.02 were confirmed in air. We used the 4H-SiC diode which had a contact pad area of 300 μm × 300 μm and a junction area of 220 μm × 220 μm. Ohmic contact on both p and n (i.e. front and back) sides were made by Ni, because nickel silicide (NiSi) provides good ohmic contact for high temperature applications. The electrical contact pads of the SiC diode were made by sputter-depositing Ni or Pt on the NiSi ohmic contact. High temperature aging tests at 673 K, 773 K and 873 K were carried out in air, and the forward current-voltage (I―V) characteristics of the SiC diodes were measured at different time intervals to observe change in the junction and series resistance. Stable p―n junction characteristic and constant series resistance were confirmed for the Pt-metalized diodes at 673 K, 773 K and 873 K. However, the Ni-metallized diodes showed marginal increase in series resistance due to the oxidation of Ni metal contacts.

Electronics, Electronique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Techniques et équipements généraux, General equipment and techniques, Capteurs (chimiques, optiques, électriques, de mouvement, de gaz, etc.); télédétection, Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres matériaux, Other materials, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Adaptabilité, Adaptability, Adaptabilidad, Ammoniac, Ammonia, Amoníaco, Argent, Silver, Plata, Basse température, Low temperature, Baja temperatura, Canal n, n channel, Capteur mesure, Measurement sensor, Captador medida, Charge superficielle, Surface charge, Carga superficial, Dosimétrie, Dosimetry, Dosimetría, Electronique organique, Organic electronics, Electrónica orgánica, Ethylène téréphtalate polymère, Ethylene terephthalate polymer, Etileno tereftalato polímero, Grille transistor, Transistor gate, Rejilla transistor, Polymère, Polymer, Polímero, Procédé fabrication, Manufacturing process, Procedimiento fabricación, Semiconducteur, Semiconductor materials, Semiconductor(material), Sensibilité élevée, High sensitivity, Alta sensibilidad, Solvant organique, Organic solvent, Solvente orgánico, Surface arrière, Back surface, Superficie atrás, Traitement matériau, Material processing, Tratamiento material, Transistor effet champ, Field effect transistor, Transistor efecto campo, 0707D, 8105L, 8530T, Configuration bottom contact, Bottom contact configuration, Procédé roll-to-roll, Roll-to-roll process, Ammonia sensor, Corona charging, Organic field effect transistor, PQT-12, Poly(ethyleneterephthalate), and Silver ink

We report an organic field-effect transistor (OFET)-based sensor made from printable materials with an unusually high sensitivity of 0.5 ppm v/v for ammonia and with limit of detection on the order of 0.1 ppm v/v. The device developed has a polyethylene terephthalate (PET) substrate, bottom contacts, and poly (3,3'-didodecylquaterthiophene) (PQT-12) cast from 4 mg/mL cholorobenzene solution as active semiconductor. The fabrication process is simplified by replacing the gate electrode and dielectric deposition steps with the introduction of static charges on the back surface of the PET substrate by corona charging, a procedure that is adaptable to roll-to-roll processing. Hydrophobic polymers applied to the back surface stabilize this charge, providing evidence for their activity at that location. In the proposed sensor, these static charges are used as a static gate, reducing the OFET architecture to a chemiresistor. The sensor is selective for ammonia over common organic solvent vapors, and the response is generally reversible. The device also demonstrates memory behavior required for dosimetric sensors when kept at low temperature (4 °C to -30 °C). A converse response from an n-channel semiconductor is also reported.

General chemistry, physical chemistry, Chimie générale, chimie physique, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Alumine, Alumina, Alúmina, Bore, Boron, Boro, Cellule solaire silicium, Silicon solar cells, Densité courant, Current density, Densidad corriente, Empilement, Stacking, Apilamiento, Evaluation performance, Performance evaluation, Evaluación prestación, Implantation ion, Ion implantation, Implantación ión, Métallisation, Metallizing, Metalización, Nitrure de silicium, Silicon nitride, Silicio nitruro, Oxyde de silicium, Silicon oxides, Passivation, Pasivación, Phosphore, Phosphorus, Fósforo, Rendement élevé, High efficiency, Rendimiento elevado, Saturation, Saturación, Semiconducteur type n, n type semiconductor, Semiconductor tipo n, Silicium, Silicon, Silicio, Surface arrière, Back surface, Superficie atrás, Surface contact, Contact surface, Superficie contacto, Sérigraphie, Serigraphy, Serigrafía, Taux conversion, Conversion rate, Factor conversión, Al2O3, SiNx, SiO2, Al2O3 passivation, Implantation, N-type Si Solar cell, and Screen printing

This paper reports on the fabrication of high efficiency (~20%) front junction n-type Si solar cells on 239 cm2 Cz using ion implanted boron emitter and phosphorus back surface field (BSF) in combination with screen printed metallization. Cell efficiencies of 19.8% and 20.0% were achieved with SiO2/SiNx and Al2O3/SiNx passivation of boron implanted emitter, respectively, supporting the superiority of Al2O3 passivation. This is consistent with low boron emitter saturation current densities of 76 and 45 fA/cm2 achieved for boron emitter passivated with SiO2/SiNx and Al2O3/SiNx stacks, respectively. Saturation current density in metal contact area of boron emitter and phosphorus BSF was measured directly by varying the metal contact coverage. Detailed analysis of saturation current density showed that the performance of our 20% is largely limited by saturation current density associated with recombination on metal contact area of boron emitter and bulk of phosphorus BSF, which accounted for almost ~50% of the total saturation current density.

Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Cellule solaire silicium, Silicon solar cells, Champ superficiel, Surface field, Campo superficial, In situ, Lacune, Vacancy, Cavidad, Matériau dopé, Doped materials, Microscopie électronique transmission, Transmission electron microscopy, Microscopía electrónica transmisión, Métallisation, Metallizing, Metalización, Pastille électronique, Wafer, Pastilla electrónica, Refroidissement, Cooling, Enfriamiento, Surface arrière, Back surface, Superficie atrás, Système refroidissement, Cooling system, Sistema enfriamiento, Sérigraphie, Serigraphy, Serigrafía, Al back contact, BSF mechanism, in situ TEM, metallization, and screen printing

Back contacts for Si solar cells made by Al evaporation and screen printing Al paste were studied by transmission electron microscopy. Si was found to diffuse into the Al during heating. Si diffusion formed vacancies in the Si wafer and Al could then penetrate the Si wafer in spiked formations. The Al spikes retracted during cooling, leaving a doped back surface field region.

Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Caractéristique courant tension, Voltage current curve, Característica corriente tensión, Cellule solaire silicium, Silicon solar cells, Condition aux limites, Boundary condition, Condiciones límites, Densité dislocation, Dislocation density, Densidad dislocación, Diffusion porteur charge, Charge carrier scattering, Difusión portador carga, Dislocation, Dislocación, Equation continuité, Continuity equation, Ecuación continuidad, Fonction Green, Green function, Función Green, Longueur diffusion, Diffusion length, Longitud difusión, Modèle 3 dimensions, Three dimensional model, Modelo 3 dimensiones, Porteur minoritaire, Minority carrier, Portador minoritario, Recombinaison porteur charge, Charge carrier recombination, Recombinación portador carga, Recombinaison superficielle, Surface recombination, Recombinación superficial, Réponse spectrale, Spectral response, Surface arrière, Back surface, Superficie atrás, Si solar cells, and dislocations

We have extended a previous model for calculating the effects of dislocations on the characteristics of a Si solar cell to include the effects of front and back surface recombination. This improved dislocation model uses Green's function approach to solve the three-dimensional continuity equation of the minority carriers with suitable boundary conditions corresponding to surface recombination at the n and p sides. The dislocations are considered to be localized lines, extending perpendicular to the front and back surfaces of the cell and having a recombination velocity. We discuss effect of several parameters such as bulk dislocation density, minority carrier diffusion length in p and n regions on the J-V characteristics, and spectral response of the cell. It is shown that these results agree well with previously published, experimental data.

General chemistry, physical chemistry, Chimie générale, chimie physique, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Addition phosphore, Phosphorus addition, Adición fósforo, Cellule solaire silicium, Silicon solar cells, Cellule solaire, Solar cell, Célula solar, Evaluation performance, Performance evaluation, Evaluación prestación, Matériau amorphe, Amorphous material, Material amorfo, Matériau dopé, Doped materials, Nitrure de silicium, Silicon nitride, Silicio nitruro, Passivation, Pasivación, Résistivité couche, Sheet resistivity, Resistividad capa, Semiconducteur type n, n type semiconductor, Semiconductor tipo n, Surface arrière, Back surface, Superficie atrás, Sérigraphie, Serigraphy, Serigrafía, Taux conversion, Conversion rate, Factor conversión, SiNx, and n-type

Rear side passivation and local back surface field formation are two of the main technological challenges for n-type PERL silicon solar cells. A promising approach is the PassDop process. This process combines a phosphorous doped passivation layer deposited on the rear side with a subsequent laser process to create both a local contact opening as well as a local back surface field. In this paper we introduce a new layer system based on doped amorphous silicon nitride (the fPassDop process) which is able to passivate the n-type surface after a firing step as typically used for screen printed contacts. After the firing step, an effective recombination velocity < 5 cm/s can be reached with this layer. The measured sheet resistance is in the range of 60 Ω/sq after the laser process. In a first test the fPassDop process is applied to small area solar cells achieving a conversion efficiency of 21.3% (675 mV Voc). Additionally, we fabricated large area n-type solar cells with screen printed front side contacts achieving 20.1% efficiency and Voc of 668 mV.

Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Addition bore, Boron addition, Adición boro, Aire superficielle, Surface area, Area superficial, Cellule couche mince, Thin film cell, Célula capa delgada, Cellule solaire, Solar cell, Célula solar, Champ superficiel, Surface field, Campo superficial, Confinement optique, Optical confinement, Couche épitaxique, Epitaxial film, Capa epitáxica, Dislocation, Dislocación, Durabilité, Durability, Durabilidad, Défaut cristallin, Crystal defect, Defecto cristalino, Défaut empilement, Stacking fault, Defecto apilado, Epitaxie, Epitaxy, Epitaxia, Matériau cristallin, Crystalline material, Material cristalino, Matériau poreux, Porous material, Material poroso, Méthode Czochralski, Czochralski method, Método Czochralski, Passivation, Pasivación, Pastille électronique, Wafer, Pastilla electrónica, Photoluminescence, Fotoluminiscencia, Porteur minoritaire, Minority carrier, Portador minoritario, Recombinaison porteur charge, Charge carrier recombination, Recombinación portador carga, Recombinaison superficielle, Surface recombination, Recombinación superficial, Silicium, Silicon, Silicio, Sorption getter, Gettering, Surface arrière, Back surface, Superficie atrás, back surface field, bulk lifetime, effective surface/interface recombination velocity, epicell, photoluminescence, and porous silicon

Porous silicon plays an important role in the concept of wafer-equivalent epitaxial thin-film solar cells. Although porous silicon is beneficial in terms of long-wavelength optical confinement and gettering of metals, it could adversely affect the quality of the epitaxial silicon layer grown on top of it by introducing additional crystal defects such as stacking faults and dislocations. Furthermore, the epitaxial layer/porous silicon interface is highly recombinative because it has a large internal surface area that is not accessible for passivation. In this work, photoluminescence is used to extract the bulk lifetime of boron-doped (1016/cm3) epitaxial layers grown on reorganised porous silicon as well as on pristine mono-crystalline, Czochralski, p+ silicon. Surprisingly, the bulk lifetime of epitaxial layers on top of reorganised porous silicon is found to be higher (~100-115 μs) than that of layers on top of bare p+ substrate (32-50 μs). It is believed that proper surface closure prior to epitaxial growth and metal gettering effects of porous silicon play a role in ensuring a higher lifetime. Furthermore, the epitaxial layer/porous silicon interface was found to be ~250 times more recombinative than an epitaxial layer/p+ substrate interface (S 103 CM/S). However, the inclusion of an epitaxially grown back surface field on top of the porous silicon effectively shields minority carriers from this highly recombinative interface.

Biotechnology, Biotechnologies, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Alliage (action), Alloying, Aleación (acción), Aluminium, Aluminio, Cellule solaire silicium, Silicon solar cells, Cellule solaire, Solar cell, Célula solar, Diminution coût, Cost lowering, Reducción costes, Etude comparative, Comparative study, Estudio comparativo, Evaluation performance, Performance evaluation, Evaluación prestación, Matériau revêtu, Coated material, Material revestido, Mesure optique, Optical measurement, Medida óptica, Modulation amplitude, Amplitude modulation, Modulación amplitud, Monocristal, Single crystal, Oxyde de silicium, Silicon oxides, Oxyde de titane, Titanium oxide, Titanio óxido, Rendement élevé, High efficiency, Rendimiento elevado, Revêtement antiréfléchissant, Antireflection coating, Revestimiento antirreflexión, Revêtement protecteur, Protective coatings, Revestimiento protector, Semiconducteur type p, p type semiconductor, Semiconductor tipo p, Silicium, Silicon, Silicio, Surface arrière, Back surface, Superficie atrás, SiO2, TiO2, Anti reflection coating, Back surface field, and Silicon solar cell

Back surface field (BSF) (n+-p-p+) silicon (Si) solar cells were fabricated with and without TiO2 or SiO2 single layer antireflection (SLAR) coatings. The two cell types were obtained with non-texturized surfaces and compared with each other, as well as with an as-grown Si solar cell. The effective aluminium-BSF was fabricated through a simple thermal evaporation and alloying (850 °C, 50 min) technique. The effect of BSF and AR coatings on the performance of the solar cells were characterized through electrical (AM 1.5 G, 100 mW/cm2), optical, and morphological measurements. The BSF Si solar cells with TiO2 and SiO2 AR coatings and without AR coatings demonstrated increased efficiencies of about 168%, 115%, and 50%, respectively, compared with the as-grown Si solar cell. The addition of the TiO2 (AR) layer initiated 24% improvement in the efficiency of the monocrystalline BSF Si solar cells, compared with 6.9% of the SiO2 (AR) coated BSF Si solar cell. The results indicate the potential of combining the TiO2 SLAR coating with BSF in the improved production of high-efficiency, low-cost Si solar cells.

Biotechnology, Biotechnologies, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Caractéristique courant tension, Voltage current curve, Característica corriente tensión, Cellule solaire silicium, Silicon solar cells, Cellule solaire, Solar cell, Célula solar, Diminution coût, Cost lowering, Reducción costes, Etude comparative, Comparative study, Estudio comparativo, Evaluation performance, Performance evaluation, Evaluación prestación, Hydrogène, Hydrogen, Hidrógeno, Longueur diffusion, Diffusion length, Longitud difusión, Matériau cristallin, Crystalline material, Material cristalino, Nitrure de silicium, Silicon nitride, Silicio nitruro, Norme, Standards, Norma, Oxyde de zinc, Zinc oxide, Zinc óxido, Passivation, Pasivación, Procédé sol gel, Sol gel process, Procedimiento sol gel, Recombinaison porteur charge, Charge carrier recombination, Recombinación portador carga, Recombinaison superficielle, Surface recombination, Recombinación superficial, Recuit, Annealing, Recocido, Rendement quantique, Quantum yield, Rendimiento quántico, Revêtement antiréfléchissant, Antireflection coating, Revestimiento antirreflexión, Revêtement métallique, Metal coating, Revestimiento metálico, Semiconducteur type p, p type semiconductor, Semiconductor tipo p, Structure surface, Surface structure, Estructura superficie, Surface arrière, Back surface, Superficie atrás, Taux conversion, Conversion rate, Factor conversión, Cellule solaire PERC, PERC solar cell, SiNx, ZnO, Al-rich zinc oxide, Passivating layers, and Surface recombination velocity

Sol―gel-derived hydrogen-annealed Al-rich zinc oxide (AZO) film has been investigated as an effective passivating layer on p-type silicon. In this paper, silicon nitride (SiNx) film is used as antireflection coating and passivating layers on a phosphorous diffused n+-front emitter, whereas sol―gel-derived hydrogen-annealed AZO film is used as a passivating and capping layer on the p-back surface of PERC (passivated emitter and rear cell with local Al back surface field) structure-based mono-crystalline (c-Si) solar cells to evaluate the potential of the AZO film. The illuminated J―V characteristics and internal quantum efficiency (IQE) of PERC and standard (conventional, full area Al back surface field) solar cells have been measured for comparison. The IQE data was used to determine the effective diffusion lengths of the solar cells, which were found to be 218.09 ± 4.36 and 571.13 ± 11.42 μm for standard and PERC solar cells, respectively. The effective back surface recombination velocity of the PERC solar cell was found to be ~67 cm/s with a metal coverage area of 12%, which is lower than the back surface recombination velocity (~451 cm/s) of the standard solar cell. The achieved conversion efficiencies of the standard and PERC solar cells were 14.31 ± 0.08% and 15.16 ± 0.09%, respectively.

General chemistry, physical chemistry, Chimie générale, chimie physique, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Argent, Silver, Plata, Brume, Haze, Bruma, Cellule couche mince, Thin film cell, Célula capa delgada, Cellule solaire silicium, Silicon solar cells, Cellule solaire, Solar cell, Célula solar, Courant court circuit, Short circuit currents, Densité courant, Current density, Densidad corriente, Empilement, Stacking, Apilamiento, Epaisseur, Thickness, Espesor, Etat surface, Surface conditions, Estado superficie, Gravure plasma, Plasma etching, Grabado plasma, Méthode échelle multiple, Multiscale method, Método escala múltiple, Oxyde de silicium, Silicon oxides, Piégeage optique, Optical trapping, Polycristal, Polycrystal, Policristal, Procédé voie sèche, Dry process, Procedimiento vía seca, Réflecteur, Reflector, Silicium, Silicon, Silicio, Simulateur, Simulator, Simulador, Surface arrière, Back surface, Superficie atrás, Texture surface, Surface texture, Théorie diffusion, Scattering theory, Teoría difusión, Théorie scalaire, Scalar theory, Teoría escalar, Verre, Glass, Vidrio, SiO2, Light trapping, Scalar scattering theory, Silicon texture, and Thin-film solar cells

In this work a highly scattering rear Si surface texture (RST) is realized by plasma etching of polycrystalline silicon (poly-Si) thin-film solar cells on glass. The resulting RST shows reflection haze values of more than 95% at the Si-air interface. The average feature size of the texture is around 200 nm. We use a model based on the scalar scattering theory to calculate the scattering properties of the textured surface. We also use a commercial thin-film solar cell simulator to evaluate the light trapping and current enhancement induced by the texture. Combining this submicron RST with a micrometer-scale glass texture can produce a multi-scale rear Si surface texture. Assuming a 1900 nm thick poly-Si solar cell on glass with a high-quality back surface reflector (silicon dioxide/silver stack), the calculated photon density absorbed in the poly-Si solar cell with the multi-scale rear Si surface texture corresponds to a 1-sun short-circuit current density (Jsc) of 31.1 mA/cm2, which is 1 mA/cm2 more than the calculated Jsc of a poly-Si solar cell with the same thickness on textured glass but without RST. The calculated current densities do not fu lly take current loss due to parasitic absorption into consideration, hence are slightly overestimated.

General chemistry, physical chemistry, Chimie générale, chimie physique, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Bande conduction, Conduction band, Banda conducción, Bande valence, Valence band, Banda valencia, Cellule solaire cadmium tellurure, Cadmium telluride solar cells, Cellule solaire silicium, Silicon solar cells, Composé binaire, Binary compound, Compuesto binario, Composé quaternaire, Quaternary compound, Compuesto cuaternario, Couche interfaciale, Interfacial layer, Capa interfacial, Densité trou, Hole density, Densidad huecos, Discontinuité bande, Band offset, Discontinuidad banda, Durabilité, Durability, Durabilidad, Erbium, Erbio, Evaluation performance, Performance evaluation, Evaluación prestación, Matériau absorbant, Absorbent material, Material absorbente, Matériau dopé, Doped materials, Modélisation, Modeling, Modelización, Recombinaison porteur charge, Charge carrier recombination, Recombinación portador carga, Recombinaison superficielle, Surface recombination, Recombinación superficial, Réflecteur, Reflector, Semiconducteur type p, p type semiconductor, Semiconductor tipo p, Simulation numérique, Numerical simulation, Simulación numérica, Surface arrière, Back surface, Superficie atrás, Séléniure d'indium, Indium selenides, Séléniure de cuivre, Copper selenides, Séléniure de gallium, Gallium selenides, Tellurure de cadmium, Cadmium tellurides, Tension circuit ouvert, Open circuit voltage, Zinc, CdTe, Cu(In,Ga)Se2, 1-D numerical simulation, CdTe solar cells, Conduction-band offset, and Device modeling

Incorporation of a conduction-band barrier around the interface between absorber layer and metal contact is a proposed strategy to improve Voc for CdTe solar cells by reducing electron contact with the back surface. The conduction-band barrier is referred to as an electron reflector (ER) in this work, which can be formed by a back layer with an expanded bandgap, a reversed back barrier, or a heavily doped back surface. Experimentally, this strategy has applied to Cu(In,Ga)Se2 and Silicon-based solar cells successfully. These approaches to electron reflectors in CdTe solar cells are investigated with numerical simulations. The expanded bandgap is shown to be the more efficient and practical way to create a CdTe electron reflector. Moreover, there is no additional improvement from the combination of any two mechanisms. For optimal improvement with an electron reflector, reasonable lifetime (1 ns or above) and full depletion are required. Without full depletion, bulk recombination limits the improvement. Theoretically, a 200-mV increase in voltage and 3% in efficiency are achievable for a 2-micron CdTe cell with 1013-cm-3 hole density, 1-ns lifetime, and a 0.2-eV electron reflector barrier. For thinner cells, the electron reflector should give a similar increase in the performance. A good-quality interface between the p-type CdTe layer and the electron-reflector layer is required, or the loss caused by the back-surface recombination is simply shifted to the interfacial recombination. Alloy CdXTe, where X can be Zn, Mg, or Mn, should be a good material for the electron-reflector barrier since the valence-band offset at CdTe/CdXTe interface is negligible for a 0.2-eV ER and the band expansion is almost exclusively in the conduction band. Preliminary experimental evidence of electron reflector was also discussed.

Biotechnology, Biotechnologies, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Cellule solaire, Solar cell, Célula solar, Couche mince, Thin film, Capa fina, Couche superficielle, Surface layer, Capa superficial, Epaisseur, Thickness, Espesor, Etude comparative, Comparative study, Estudio comparativo, Evaluation performance, Performance evaluation, Evaluación prestación, Hétérojonction, Heterojunction, Heterounión, Logiciel, Software, Logicial, Matériau amorphe hydrogéné, Amorphous hydrogenated material, Material amorfo hidrogenado, Matériau amorphe, Amorphous material, Material amorfo, Matériau conducteur, Conducting material, Material conductor, Matériau cristallin, Crystalline material, Material cristalino, Matériau transparent, Transparent material, Material transparente, Microcristal, Microcrystal, Optimisation, Optimization, Optimización, Passivation, Pasivación, Pastille électronique, Wafer, Pastilla electrónica, Piégeage optique, Optical trapping, Rendement élevé, High efficiency, Rendimiento elevado, Semiconducteur type n, n type semiconductor, Semiconductor tipo n, Semiconducteur type p, p type semiconductor, Semiconductor tipo p, Silicium, Silicon, Silicio, Simulation numérique, Numerical simulation, Simulación numérica, Simulation ordinateur, Computer simulation, Simulación computadora, Simulation système, System simulation, Simulación sistema, Surface arrière, Back surface, Superficie atrás, Taux conversion, Conversion rate, Factor conversión, Matériau hydrogéné, Hydrogenated material, Material hidrogenado, a-Si:H, μc-Si:H, HIT solar cell, Microcrystalline silicon, Photovoltaic, and Texturing

In present article the influence of thickness and band gap of microcrystalline silicon emitter layer, amorphous silicon front and back intrinsic layers and p-type crystalline silicon (c-Si) wafer thickness on the performance of TCO/μc-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si;H(i)/μc Si:H(p+)/Ag Heterojunction with thin intrinsic layer (HIT) solar cell along with other structural possibilities were investigated through computer simulations using AFORS-HET software. These simulations revealed the importance of inclusion of intrinsic a-Si:H thin layer in improving the performance of solar cell with the help of interface passivation. Also microcrystalline BSF can raise the conversion efficiency more than 4% compared to HIT solar cell having no BSF layer. Highest stable efficiency of 24.12% for p-type substrate based HITBSF (HIT with back surface field) solar cells was observed. Furthermore the effect of textured transparent conductive oxide (TCO) on solar cells was investigated where the enhanced light trapping was observed with the use of textured TCO surface which raised the performance of solar cells. These optimizations may help in fabricating μc-Si emitter and BSF based HIT solar cells with stable efficiencies compared to possibly degraded efficiencies as in case of a-Si:H based HIT solar cell structures studied so far.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Techniques et équipements généraux, General equipment and techniques, Capteurs (chimiques, optiques, électriques, de mouvement, de gaz, etc.); télédétection, Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Capteur mesure, Measurement sensor, Captador medida, Caractéristique électrique, Electrical characteristic, Característica eléctrica, Couche ultramince, Ultrathin films, Matrice formage, Die, Matriz formadora, Mesure contrainte, Stress measurement, Microrégisseur, Microcontroller, Microcontrolador, Monitorage, Monitoring, Monitoreo, Packaging électronique, Electronic packaging, Packaging electrónico, Propriété mécanique, Mechanical properties, Propiedad mecánica, Silicium, Silicon, Silicio, Structure flexible, Flexible structure, Estructura flexible, Surface arrière, Back surface, Superficie atrás, Système autonome, Autonomous system, Sistema autónomo, Vêtement, Clothing, Vestidura, and 0707D

Ultra-thin chips of less than 20 μm become flexible, allowing integration of silicon IC technology with highly flexible electronics such as food packaging sensor systems or healthcare and sport monitoring tags as wearable patches or even directly in clothing textile. The ultra-thin chips in these products will be bent to a very high curvature, which puts a large strain on the chips during use. In this paper a modified four-point bending method is presented, which is capable of measuring chip stress at high curvatures. The strength of several types of ultra-thin chips is evaluated, including stand-alone ultra-thin test chips and back-thinned 20 μm thick microcontrollers, as well as assemblies containing integrated ultra-thin microcontroller chips. The effect of chip thickness, bending direction and backside finish on strength and minimum bending radius is investigated using the modified four point bending method. The effect of bonding ultra-thin chips to flexible foils on the assembly strength and minimum bending radius is evaluated as well as the effect of bending on electrical properties of the bonded microcontroller dies. .

Biotechnology, Biotechnologies, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Alignement, Alignment, Alineamiento, Cellule solaire silicium, Silicon solar cells, Cellule solaire, Solar cell, Célula solar, Contact ponctuel, Point contact, Contacto puntual, Diagramme bande, Band diagrams, Dopage, Doping, Evaluation performance, Performance evaluation, Evaluación prestación, Hétérojonction, Heterojunction, Heterounión, Matériau amorphe hydrogéné, Amorphous hydrogenated material, Material amorfo hidrogenado, Modèle 2 dimensions, Two dimensional model, Modelo 2 dimensiones, Modélisation, Modeling, Modelización, Optimisation, Optimization, Optimización, Rendement élevé, High efficiency, Rendimiento elevado, Silicium, Silicon, Silicio, Simulation système, System simulation, Simulación sistema, Structure bande, Band structure, Estructura banda, Surface arrière, Back surface, Superficie atrás, Texturation, Texturación, a-Si:H, Back heterojunction solar cell, Device modeling, Energy band diagram, Interdigitated point contact solar cell, Photovoltaics, and Silicon based back heterojunction solar cell

The paper reports on the simulation studies of silicon based point contact back heterojunction solar cells using Silvaco Atlas tools. We also make use of band alignment diagrams connecting the entire cross-section of the device, from the emitter to the back surface field, to appreciate the operation of the solar cell. The effect of bias conditions on the band diagram and solar cell performance is explored. The influence of doping in the a-Si:H layer on the performance parameters is also investigated. In performing our investigation, we consider an optimized solar cell that shows a high efficiency of 24.49%, with a Voc of 0.76 V, Jsc of 38.29 mA/cm2, and FF of 84.2. Further improvements in efficiency can be potentially achievable by using texturization and front surface field.

Biotechnology, Biotechnologies, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Rayonnement solaire, Solar radiation, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Addition étain, Tin addition, Adición estaño, Cellule couche mince, Thin film cell, Célula capa delgada, Cellule solaire, Solar cell, Célula solar, Charge espace, Space charge, Carga espacio, Couche ITO, ITO layers, Couche mince, Thin film, Capa fina, Courant court circuit, Short circuit currents, Densité courant, Current density, Densidad corriente, Eclairement, Illumination, Alumbrado, Epaisseur, Thickness, Espesor, Etude théorique, Theoretical study, Estudio teórico, Evaluation performance, Performance evaluation, Evaluación prestación, Facteur remplissage, Fill factor, Matériau absorbant, Absorbent material, Material absorbente, Oxyde d'indium, Indium oxide, Indio óxido, Puissance sortie, Output power, Potencia salida, Puissance volumique, Power density, Rayonnement solaire, Solar radiation, Radiación solar, Recombinaison porteur charge, Charge carrier recombination, Recombinación portador carga, Recombinaison superficielle, Surface recombination, Recombinación superficial, Rendement quantique, Quantum yield, Rendimiento quántico, Sulfure de cadmium, Cadmium sulfide, Cadmio sulfuro, Sulfure de plomb, Lead sulfide, Plomo sulfuro, Surface arrière, Back surface, Superficie atrás, Tension circuit ouvert, Open circuit voltage, Verre, Glass, Vidrio, CdS, Couche fenêtre, Window layer, ITO, PbS, CdS/PbS thin film solar cell, Cell efficiency, Internal quantum efficiency, J-V curve, and Transmission spectrum

This work represents a theoretical analysis of a new type of thin film solar cells with structure glass/ITO/CdS/PbS/AL. The transmission spectrum was calculated based on the multi-relfections effect from all cell layers as well as absorption effect in both ITO and CdS layers. The calculations of spectral internal quantum efficiency were carried out based on the front and back surface recombination of PbS layer. The recombination losses in space-charge region were studied. The effect of thickness of the absorber layer on the calculations of short-circuit current density was studied under illumination condition of AMI.5 solar irradiation. The data of open circuit voltage, maximum voltage, maximum current density, fill factor, output power density and efficiency of CdS/PbS solar cell were estimated from the J-V characteristics curve under illumination effect. This study ignored the effect of metallic back contact and thus the incomplete absorption losses (transmission losses) take place at thin absorber layer. The obtained results showed that the 2 μm thickness of the absorber layer is not sufficient to absorb all the transmitted photons from the window layer (CdS) and the selection of theses thin thicknesses of PbS in order to correspond with experimental implementations of these devices. Both the optical and recombination losses lead to decrease the current density by 82% (JSC = 7.28 mA/cm2) at thickness 0.5 μm of PbS and these losses decreased to 67% (JSC = 16 mA/cm2) at thickness 2 μm. The output power density and the cell efficiency increased with increasing the thickness of effective layer. The maximum cell efficiency of 4.13% was obtained at thickness of 2 μm which is considered greater than those obtained experimentally.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Composé III-V, III-V compound, Compuesto III-V, Barrière Schottky, Schottky barrier, Barrera Schottky, Canal n, n channel, Champ électrique, Electric field, Campo eléctrico, Charge espace, Space charge, Carga espacio, Composé binaire, Binary compound, Compuesto binario, Couche tampon, Buffer layer, Capa tampón, Durabilité, Durability, Durabilidad, Effet Gunn, Gunn effect, Efecto Gunn, Electron libre, Free electron, Electrón libre, Fiabilité, Reliability, Fiabilidad, Mobilité dérive, Drift mobility, Movilidad deriva, Mobilité porteur charge, Charge carrier mobility, Movilidad portador carga, Méthode analytique, Analytical method, Método analítico, Niveau profond, Deep level, Nivel profundo, Phosphure d'indium, Indium phosphide, Indio fosfuro, Semiconducteur type n, n type semiconductor, Semiconductor tipo n, Seuil tension, Voltage threshold, Umbral tensión, Silicium, Silicon, Silicio, Simulation numérique, Numerical simulation, Simulación numérica, Surface arrière, Back surface, Superficie atrás, Technologie MOS, MOS technology, Tecnología MOS, Transistor MOSFET, MOSFET, Transistor effet champ barrière Schottky, Metal semiconductor field effect transistor, Transistor efecto campo barrera Schottky, Transport charge, Charge transport, InP, Backgating effect, Metal-N-SI-N+ structures, and Semi-insulating GaAs

The backgating (sidegating) effect in III-V MESFET's devices is analyzed through the modelisation of a Metal (Schottky barrier)-N (channel)-SI (Semi Insulating)-N+ (back-gate contact) structure. Numerical and analytical results, using the drift-diffusion charge transport model, show that along the applied voltage range associated with backgating: (i) quasi space charge neutrality across most of the bulk SI layer and (ii) quasi Boltzmann equilibrium for the free electron across the reverse biased N (channel)-SI contact prevail for GaAs (SI) or InP (SI). The circumstances under which a negative bias applied on the back-gate (N+) contact will either develop across the reverse biased N-SI contact (strong backgating) or across the SI layer (negligible backgating) are described by means of a simple analytical relation as a function of the deep level parameters values. The electric field dependence of the carrier mobility (Gunn effect) produces a backgating effect with a threshold voltage. The presence of a low lifetime, buffer layer, at the N-SI interface is shown to strongly reduce it.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs à structure composée, Compound structure devices, Transistors, Autres dispositifs multijonctions. Transistors de puissance. Thyristors, Other multijunction devices. Power transistors. Thyristors, Transistor puissance, Power transistor, Transistor potencia, Couche enterrée, Buried layer, Capa enterrada, Couche oxyde, Oxide layer, Capa óxido, Diffusion latérale, Lateral diffusion, Difusión lateral, Effet on off, On off effect, Efecto on off, Electronique puissance, Power electronics, Electrónica potencia, Endommagement, Damaging, Deterioración, Etude comparative, Comparative study, Estudio comparativo, Evaluation performance, Performance evaluation, Evaluación prestación, Haute tension, High voltage, Alta tensión, Semiconducteur type n, n type semiconductor, Semiconductor tipo n, Semiconducteur type p, p type semiconductor, Semiconductor tipo p, Surface arrière, Back surface, Superficie atrás, Technologie silicium sur isolant, Silicon on insulator technology, Tecnología silicio sobre aislante, Transistor MOSFET, MOSFET, Transistor bipolaire grille isolée, Insulated gate bipolar transistor, Transistor bipolar rejilla aislada, Transistor latéral, Lateral transistor, Transistor lateral, Dispositif à superjonction, Superjunction device, Breakdown, LIGBT, Partial SOI, and Superjunction

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given.

General chemistry, physical chemistry, Chimie générale, chimie physique, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electroénergétique, Electrical power engineering, Réseaux et lignes électriques, Power networks and lines, Perturbation. Régulation. Protection, Disturbances. Regulation. Protection, Conversion directe et accumulation d'énergie, Direct energy conversion and energy accumulation, Conversion photoélectrique, Photoelectric conversion, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Bore, Boron, Boro, Caractéristique courant tension, Voltage current curve, Característica corriente tensión, Cellule solaire contact arrière, Back contact solar cells, Cellule solaire, Solar cell, Célula solar, Conversion énergie, Energy conversion, Conversión energética, Courant photoélectrique, Photoelectric current, Corriente fotoeléctrica, Creux tension, Voltage dip, Hueco tensíon, Effet concentration, Concentration effect, Efecto concentración, Etude comparative, Comparative study, Estudio comparativo, Etude expérimentale, Experimental study, Estudio experimental, Haute performance, High performance, Alto rendimiento, Modèle théorique, Theoretical model, Modelo teórico, Méthode expérimentale, Experimental method, Método experimental, Oxygène, Oxygen, Oxígeno, Panneau solaire, Photovoltaic array, Panel solar, Pastille électronique, Wafer, Pastilla electrónica, Porteur charge, Charge carrier, Portador carga, Porteur majoritaire, Majority carrier, Portador mayoritario, Rendement énergétique, Energetic efficiency, Rendimiento energético, Résistance série, Series resistance, Resistencia en serie, Silicium, Silicon, Silicio, Simulation système, System simulation, Simulación sistema, Stabilité réseau électrique, Power system stability, Stabilité tension, Voltage stability, Estabilidad tensión, Surface arrière, Back surface, Superficie atrás, Taux conversion, Conversion rate, Factor conversión, Metal wrap through, and Simulation

In back-contact solar cells, both external polarities are located at the back surface of the device, which allows for higher photocurrent generation on cell level and reduced series resistance on module level, leading to higher energy conversion efficiencies compared to conventional solar cells and modules. However, the majority charge carriers, which are generated near the back emitter, have to flow laterally e.g. through the base in order to reach the external majority carrier contact. In the present work, we analyse the lateral series resistance by means of measurement and simulation for high-performance metal wrap through (HIP-MWT) solar cells. We compare theoretical models and experimental methods to extract the effective series resistance from simulated and measured current―voltage characteristics and show that lateral voltage variations significantly increase the local recombination current. If the width of the gap between the external majority carrier contacts is reduced from the typical value of 3.5 mm to ideally 0 mm, we expect an increase of the energy conversion efficiency of approximately 0.1% abs. for cells with three continuous rear emitter contacts on 125 mm × 125 mm large silicon wafers. In a simulation study, the bulk doping concentration NA and the bulk lifetime are varied yielding an optimal base resistivity of 0.6 Ω cm―1.5 Ω cm for HIP-MWT solar cells based on Czochralski-grown silicon in the degraded state of the boron―oxygen defect and an optimal resistivity of less than 1.0 Ω cm for the case of bulk lifetimes larger than ~300 μs.