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A method is provided for fabricating a semiconductor device which includes a first contact point and a second contact point located above the first contact point. A first material layer is conformally deposited over the contact points, and a second material layer is deposited. A photoresist layer is applied and patterned to leave remaining portions. The remaining portions are trimmed to produce trimmed remaining portions which overlie eventual contact holes to the contact points. Using the trimmed remaining portions as an etch mask, exposed portions the second material layer are etched away to leave sacrificial plugs. The sacrificial plugs are etched away to form contact holes that reach portions the first material layers. Another etching step is performed to extend the contact holes to produce final contact holes that extend to the contact points.

A method is provided for fabricating a semiconductor device which includes a first contact point and a second contact point located above the first contact point. A first material layer is conformally deposited over the contact points, and a second material layer is deposited. A photoresist layer is applied and patterned to leave remaining portions. The remaining portions are trimmed to produce trimmed remaining portions which overlie eventual contact holes to the contact points. Using the trimmed remaining portions as an etch mask, exposed portions the second material layer are etched away to leave sacrificial plugs. The sacrificial plugs are etched away to form contact holes that reach portions the first material layers. Another etching step is performed to extend the contact holes to produce final contact holes that extend to the contact points.

Methods of etching silicon nitride material, and more particularly, etching nitride selective to silicon dioxide or silicide, are disclosed. The methods include exposing a substrate having silicon nitride thereon to a plasma including at least one fluorohydrocarbon and a non-carbon containing fluorine source such as sulfur hexafluoride (SF6). The plasma may also include oxygen (O2) and the fluorohydrocarbons may include at least one of: trifluoromethane (CHF3), difluoromethane (CH2F2), and methyl fluoride (CH3F). In an alternative embodiment, the plasma includes one of hydrogen (H2) and nitrogen trifluoride (NF3) and one of tetrafluoromethane (CF4) and octafluorocyclobutane (C4F8). The methods are preferably carried out using a low bias voltage, e.g. <100 V.

Methods of etching silicon nitride material, and more particularly, etching nitride selective to silicon dioxide or silicide, are disclosed. The methods include exposing a substrate having silicon nitride thereon to a plasma including at least one fluorohydrocarbon and a non-carbon containing fluorine source such as sulfur hexafluoride (SF6). The plasma may also include oxygen (O2) and the fluorohydrocarbons may include at least one of: trifluoromethane (CHF3), difluoromethane (CH2F2), and methyl fluoride (CH3F). In an alternative embodiment, the plasma includes one of hydrogen (H2) and nitrogen trifluoride (NF3) and one of tetrafluoromethane (CF4) and octafluorocyclobutane (C4F8). The methods are preferably carried out using a low bias voltage, e.g. <100 V.