Settels, Sjef J., Duarte, Jorge L., van Duivenbode, Jeroen, and Lomonova, Elena A.
IEEE Transactions on Power Electronics. Apr2020, Vol. 35 Issue 4, p3450-3465. 16p.
ZERO voltage switching, HIGH voltages, SEMICONDUCTOR manufacturing, RESONANT inverters, EIGENFUNCTIONS, PULSE width modulation transformers, and SEMICONDUCTOR equipment
Industrial applications, e.g., semiconductor manufacturing equipment, require power converters providing high power with high precision and bandwidth. This article presents a three-level flying capacitor resonant pole inverter configuration that combines high output power and high switching frequency with reduced switch voltage stress. A multilevel modulation strategy is applied to minimize conduction losses, which, in addition, guarantees zero-voltage switching (ZVS) for the entire operating range to reduce switching losses. The proposed multilevel converter configuration is compared with an existing two-level configuration by simulation. Increasing the number of voltage levels results in lower total losses and increased linearity of the generated output current. Experimental results acquired with a hardware prototype validate the fast switching of high voltage, proper functioning of the multilevel modulation strategy, and achieving of ZVS. Improvements of the theoretical analysis are presented to compensate for delays in the system and deviating parameter values. Results obtained with a compensated system indicate a relatively high accuracy and linearity of the generated output current of the inverter. [ABSTRACT FROM AUTHOR]
SEMICONDUCTOR manufacturing, ALLOYS, SEMICONDUCTOR equipment, CORE materials, SURFACE resistance, and MODULUS of elasticity
Ultra-precision testing is a very important procedure to secure the reliability of the products as well as for the technology development in the areas of semiconductor and display. Accordingly, companies manufacturing equipment for testing of semiconductor and display have been continuously executing researches for the improvement of the performances of test sockets used in test equipment. Through this study, characteristics of the materials in accordance with the mechanical and electrical properties of Ni-30wt%Co alloy and newly developed Cu-2wt%Be alloy were analyzed in order to select the probe pin material of the socket, which is a key component used in the semiconductor testing equipment. In addition, finite element interpretation was executed by using Ansys Workbench 14.0 to comparatively analyze the finite element interpretation results and experimental results. Experiment was executed for the mechanical properties including tensile strength, elasticity modulus, specific heat, thermal expansion coefficient and Contact Force, for electrical properties, experiment on surface resistance, specific resistance and electrical conductivity was executed to measure the properties. It was confirmed that the results of finite element interpretation and experiment displayed similar trend and it is deemed that the Contact Force value was superior for Be-Co alloy. Through this study, it was confirmed that the newly developed Be-Co alloy is more appropriate as probe pin material used as the core component of test socket used in the semiconductor testing equipment than the existing Ni-Co alloy. [ABSTRACT FROM AUTHOR]
WIRELESS power transmission, MICROWAVE receivers, ELECTRIC coils, ELECTRIC potential, and SEMICONDUCTOR equipment
In this paper, a receiver that can adjust the output voltage of a coil is proposed to simultaneously charge as many receivers of different couplings as possible. One large coil of traditional receiver is split into two small coils while the total coil volume is kept constant. The receiver has three output modes: half-voltage, same-voltage, and boosted-voltage modes. First, the boosted-voltage mode can produce an receiver (RX) coil voltage that is ∼60% higher than the traditional receiver with an identical coil volume. It is useful for low-coupling and low-transmitter (TX)-output condition. Second, the half-voltage mode protects the semiconductor devices from overvoltage by outputting half of the traditional receiver with identical volume. It is necessary for high-coupling and high-TX-output condition with otherwise high voltage stress. Finally, the same-voltage mode produces the same coil voltage as that of the traditional receiver. Due to the mode selection, a relatively constant RX coil voltage can be maintained under both high-coupling and low-coupling conditions. This enables a single TX to charge both the strongly coupled RX and the weakly coupled RX simultaneously. In the experiment, the proposed 30-W receiver can operate across 1.9–7.5 cm, whereas the conventional receiver is restricted to 3.5–5.5 cm. [ABSTRACT FROM AUTHOR]
DC-to-DC converters, HIGH voltages, SEMICONDUCTOR equipment, CAPACITORS, and ELECTRIC potential measurement
This paper proposes a medium-/high-voltage high-power hybrid modular dc–dc converter to interconnect two different dc-voltage levels in medium-/high-voltage dc grids. The converter consists of half-bridge submodules (SMs) rated at a moderate voltage level, i.e., series connection of semiconductor devices is avoided while connecting two high dc-voltage levels. The proposed architecture provides self-balancing operation, i.e., unlike conventional modular converters, no need for capacitor voltage measurement, which enhances the system reliability and simplicity. Sequential charging/discharging of SMs capacitors is adopted in the proposed approach to ensure a self-balanced operation. The proposed architecture can provide a high conversion ratio as well as power transfer in both directions, i.e., bidirectional dc–dc converter. Detailed illustration of the proposed approach operational concept, design, and overall control system is presented. Simulation and experimental results are presented to show the viability of the proposed configuration and validate the claims. [ABSTRACT FROM AUTHOR]
The design, realization, and tests of an S-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) single-chip front end (SCFE) is presented. The MMIC, realized on the 250-nm gate length GaN process available from the united monolithic semiconductor, integrates high-power and low-noise amplification together with the transmit (Tx)-receive (Rx) switch in a $7\times 7$ mm2 chip area. The SCFE has been conceived for active electronically scanned antenna applications in S-band. In the Rx mode, noise figure (NF) lower than 1.75 dB and gain better than 30 dB have been measured. In the Tx mode, output power and power added efficiency better than 45 dBm and 42%, respectively, have been achieved, with an associated gain higher than 35 dB. Such performance has been measured over a 13% fractional bandwidth in S-band. To the best of the authors’ knowledge, this is the first GaN SCFE operating in S-band. [ABSTRACT FROM AUTHOR]
Pronin, I. A., Yakushova, N. D., Averin, I. A., Moshnikov, V. A., Donkova, B. V., Dimitrov, D. Tz., Georgieva, A. Ts., and Nalimova, S. S.
EAI Endorsed Transactions on the Energy Web; 2019, Vol. 6 Issue 22, p1-7, 7p
GAS detectors, SEMICONDUCTOR equipment, PERCOLATION theory, POROSITY, PORE size distribution, and SOL-gel processes
A percolation model of gas sensors is proposed, on the basis of which the effect of material porosity, pore size and pore size distribution on the gas detection threshold is analyzed. It is shown that micropores exert the greatest influence on gas sensitive properties. An increase in the percolation threshold leads to an increase in the detection threshold of reducing gases. The developed percolation model is used to explain high sensitivity values of sensor structures obtained by the chemical co-precipitation method. [ABSTRACT FROM AUTHOR]
MONOLITHIC microwave integrated circuit power amplifiers, HETEROJUNCTION bipolar transistors, POWER amplifiers, WIRELESS communications equipment, SEMICONDUCTOR equipment, and BREAKDOWN voltage
The article talks about the InP heterojunction bipolar transistor (HBT) power amplifier (PA). The topics addressed include information on methodoldy to minimize the drawbacks of the materials of the solid state III-V compound semiconductor HBT which is low collector-emitter breakdown voltage (BVCEO) and stacked topology: high speed device for a common emitter (CE) and a high breakdown device for a common base (CB) to generate high gain and high output power.
The article offers information on the future of semiconductors. Particular focus is given to the work of engineers at Stanford University. Additional topics discussed include the history of semiconductors and Moore's Law, microprocessors, and boutique microchips designed for visual processing, big data analytics and cryptography.