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Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Convertisseurs de signal, Signal convertors, Algorithme, Algorithm, Algoritmo, Architecture réseau, Network architecture, Arquitectura red, Circuit intégré, Integrated circuit, Circuito integrado, Consommation électricité, Electric power consumption, Consumo electricidad, Economies d'énergie, Energy savings, Ahorros energía, Electronique faible puissance, Low-power electronics, Empilement, Stacking, Apilamiento, Energie minimale, Minimum energy, Energía mínima, Etat actuel, State of the art, Estado actual, Gestion tâche, Task scheduling, Gestión labor, Globalement asynchrone localement synchrone, Globally asynchronous locally synchronous, Globalmente asincrono localmente sincrono, Implémentation, Implementation, Implementación, Mappage, Mapping, Carta de datos, Modèle 3 dimensions, Three dimensional model, Modelo 3 dimensiones, Méthode partition, Partition method, Método partición, Optimisation, Optimization, Optimización, Partitionnement, Partitioning, Subdivisión, Processeur multicoeur, Multicore processor, Procesador MultiNúcleo, Réseau interconnexion, Interconnection network, Red interconexión, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Système sur puce, System on a chip, Sistema sobre pastilla, 3-Dimensional SoCs, Power balancing, System energy, Thermal constraint, and Voltage-frequency island

Three dimensional (3-D) multi-core SoC has been recognized as a promising solution for implementing complex applications with lower system energy. Recently, voltage-frequency island (VFI)-based design paradigm was widely adopted for energy optimization. However, the existing work commonly targeted 2-D platform, which cannot handle the exacerbated thermal issues and the increased solution space from 3-D integration. In this paper, we propose an optimization framework targeting VFI-based 3-D multi-core SoCs to minimize system energy meanwhile still meeting task deadline and thermal constraints. Our framework conducts at an earlier design phase in which designers have the freedom to determine the core stacks and map them into the hardware platform. Besides energy-aware task scheduling, we also conduct core stacking and task adjusting to balance the powers across the chip for thermal optimization. Moreover, by treating each core stack as a unity, the complicated problem of core mapping and VFI partitioning in 3-D platform can be simplified as a 2-D one. Experimental results demonstrate that on average our framework can achieve an energy reduction of 15.8% over the prior thermal balancing algorithm [17] (X. Zhou, J. Yang, Y. Xu, et al. Thermal-aware task scheduling for 3D multicore processors, IEEE Trans. Parallel Distrib. Syst. (TPDS), 21(1) (2010), 60-71.). Moreover, on average a reduction of 4.8 °C in peak temperature is achieved by our framework, compared with the state-of-the-art energy optimization scheme [8] (U.Y. Ogras, R. Marculescu, P. Choudhary, et al. Voltage-frequency island partitioning for GALS-based networks-on-chip, in: ACM/IEEE Design Automation Conference (DAC), 2007, pp. 110-115.).

Electrical engineering, Electrotechnique, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Cellule solaire à colorant, Dye-sensitized solar cell, Célula solar sensibilizada tinte, Formage, Forming, Conformado, Graphène, Graphene, Haute performance, High performance, Alto rendimiento, Modèle 3 dimensions, Three dimensional model, Modelo 3 dimensiones, Modélisation, Modeling, Modelización, Nanotube carbone, Carbon nanotubes, Semiconducteur type n, n type semiconductor, Semiconductor tipo n, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Contre-électrode, Counterelectrode, Electrode auxiliaire, Auxiliary electrode, Carbon nanotube, Counter electrode, Gaphene, and Three-dimensional structure

The brick-like N-doped graphene-carbon nanotube (NGC) composites are designed by mechanically grinding the filtration films, which are fabricated to form a three-dimensional structure film as a counter electrode (CE). The N-doped graphene/carbon nanotube films with a three-dimensional brick-like structure can provide numerous vertical active edge sites. The excellent electrochemical catalytic activities of CE can be obtained by adjusting the different ratio of graphene to CNTs to control the size and N-doping content of breaking particles. NGC17 CE based dye-sensitized solar cells (DSSC) have reached a high efficiency (6.74%) close to platinum-based cells (6.89%). The excellent efficiency may be attributed to the following factors: a) the ΔEp of NGC17 (304 mV) is lower than that of the Pt electrode (389 mV); b) the charge transfer resistance (Rct) at the NGC17-CE/electrolyte interface was 1.78 Ω cm-2, which is lower than that of a Pt-CE/electrolyte interface (8.97 Ω cm-2).

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits optiques et optoélectroniques, Optical and optoelectronic circuits, Optique intégrée. Fibres et guides d'onde optiques, Integrated optics. Optical fibers and wave guides, Metaux. Metallurgie, Metals. Metallurgy, Transformation de matériaux métalliques, Production techniques, Usinage, Cutting, Corrosion, Mécanismes fondamentaux et formes de la corrosion, Corrosion mechanisms, Anodisation, Anodizing, Anodización, Elektrolytisches Oxidieren, Effet rayonnement, Radiation effect, Efecto radiación, Strahleneffekt, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Faisceau ionique, Ion beam, Haz iónico, Ionenstrahl, Irradiation ion, Ion irradiation, Irradiación ión, Microusinage, Micromachining, Micromaquinado, Modèle 2 dimensions, Two dimensional model, Modelo 2 dimensiones, Modèle 3 dimensions, Three dimensional model, Modelo 3 dimensiones, Nanostructure, Nanoestructura, Optimisation, Optimization, Optimización, Optimierung, Optique intégrée, Integrated optics, Optica integrada, Oxydation, Oxidation, Oxidación, Propagation optique, Light propagation, Propriété électrochimique, Electrochemical properties, Propiedad electroquímica, Elektrochemische Eigenschaft, Rugosité, Roughness, Rugosidad, Rauhigkeit, Silicium, Silicon, Silicio, Structure 2 dimensions, Two dimensional structure, Estructura 2 dimensiones, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Usinage, Machining, Mecanizado, Zerspanen, 6182R, 8540H, Electrochemical anodization, Free-standing, Ion beam irradiation, Silicon micromachining, Surface roughness, and Two- and three-dimensional structures

We have developed a process to machine bulk silicon in two- and three-dimensions shapes and structures. Here we briefly introduce this process and give examples of the types of surface profiles and three-dimensional geometries which can be fabricated. One of the limitations, as with all forms of silicon machining is the final surface roughness, as this introduces losses, for example in light propagation through photonic devices. Here we describe various contributing factors to the surface roughness and options to reducing it. Under optimized conditions roughness values of less than 1 nm can be achieved.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Techniques, équipements et instruments mécaniques, Mechanical instruments, equipment and techniques, Systèmes et dispositifs micromécaniques, Micromechanical devices and systems, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Fullerènes et matériaux apparentés; diamants, graphite, Fullerenes and related materials; diamonds, graphite, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs micro- et nanoélectromécaniques (mems/nems), Micro- and nanoelectromechanical devices (mems/nems), Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Oscillateurs, résonateurs, synthétiseurs, Oscillators, resonators, synthetizers, Semiconducteur bande interdite nulle, Zero band gap semiconductors, Basse fréquence, Low frequency, Baja frecuencia, Couche ultramince, Ultrathin films, Dispositif microélectromécanique, Microelectromechanical device, Dispositivo microelectromecánico, Déformation, Deformation, Deformación, Echelle grande, Large scale, Escala grande, Fréquence résonance, Resonance frequency, Frecuencia resonancia, Graphène, Graphene, Membrane, Membrana, Micromachine, Micromáquina, Module Young, Young modulus, Módulo Young, Méthode analytique, Analytical method, Método analítico, Résonateur, Resonator, Resonador, Spectre Raman, Raman spectrum, Espectro Raman, Spectrométrie Raman, Raman spectrometry, Espectrometría Raman, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, 7830N, 8105T, 8105U, Acoustic sensing, MEMS, Raman, Resonant frequency, and Young's modulus

Graphene resonators have been fabricated in rectangular and circular geometries ranging from 1 to 3 mm in diameter. The resonant frequencies have been measured, and fitted to an analytical model. An optical profile of the graphene sheet has been taken, and the monolayer graphene has been confirmed to be of high quality using Raman spectroscopy. The graphene membranes have shown hookean behaviour with no evidence of deformation. The characterisation of the single layer graphene sheet on this large scale provides new information previously unavailable on the mechanical stability of graphene with ultra high aspect ratio.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Propriétés mécaniques et acoustiques de l'état condensé, Mechanical and acoustical properties of condensed matter, Propriétés mécaniques des solides, Mechanical properties of solids, Fatigue, fragilisation, rupture et fissures, Fatigue, brittleness, fracture, and cracks, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de nanofabrication, Methods of nanofabrication, Formation de nanomotifs, Nanoscale pattern formation, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Propriétés mécaniques. Rhéologie. Mécanique de la rupture. Tribologie, Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology, Rupture, Fractures, Adhérence, Adhesion, Adherencia, Adhaesion, Défaillance mécanique, Failure (mechanical), Délaminage, Delamination, Delaminación, Schichtabloesung, Formation motif, Patterning, Formacíon motivo, Microstructure, Microestructura, Mikrogefuege, Or, Gold, Oro, Procédé voie sèche, Dry process, Procedimiento vía seca, Rupture, Ruptura, Bruch, Silane organique, Organic silane, Silano orgánico, Siloxane(diméthyl) polymère, Dimethylsiloxane polymer, Siloxano(dimetil) polímero, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Sélectivité, Selectivity, Selectividad, 6860B, 8116R, Substrat structuré, Patterned substrate, (3-mercaptopropyl)trimethoxysilane (MPTMS), Cohesive mechanical failure, Dry peel-off process, Polydimethylsiloxane (PDMS), and Selective bonding

This paper presents a novel patterning method of polydimethylsiloxane (PDMS) microstructures on solid surfaces by selective bonding and cohesive mechanical failure of PDMS. Generally, when the gold film is laid between PDMS and a Si substrate, Au film with PDMS structure is easily peeled off from a Si substrate because of weak adhesion between Au and the Si substrate. However, when the Au is patterned on the Si substrate locally, PDMS bonds selectively to the Si substrate where Au patterns are not covered. The selectivity of bonding is promoted by treatment with (3-mercaptopropyl)trimethoxysilane on Au patterns and Si substrates. Then, three-dimensional PDMS microstructures are fabricated by a cohesive mechanical failure of PDMS during a dry peel-off process due to enhanced adhesion of PDMS and the Si substrate.

Environment, Environnement, Pollution, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Genie chimique, Chemical engineering, Adsorption, Pollution, Adsorption, Adsorción, Ammoniac, Ammonia, Amoníaco, Cinétique, Kinetics, Cinética, Combustible, Fuel, Diffusion, Difusión, Désorption, Desorption, Desorción, Désulfuration, Desulfurization, Desulfuración, Encombrement stérique, Steric hindrance, Embarazo estérico, Imprégnation, Impregnation, Impregnación, Isotherme Langmuir, Langmuir isotherm, Isoterma Langmuir, Isotherme adsorption, Adsorption isotherm, Isotermo adsorción, Microscopie électronique balayage, Scanning electron microscopy, Microscopía electrónica barrido, Modélisation, Modeling, Modelización, Ordre 2, Second order, Orden 2, Sorbant, Sorbent, Sorbente, Spectrométrie absorption atomique, Atomic absorption spectrometry, Espectrometría absorción atómica, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Isotherm equations, Lewis acid sites, Mesoporous Ni-AlKIT-6, and Simulated fuels

High performance nickel supported on mesoporous AlKIT -6 (Si/Al = 15, 25, 50, 100) sorbents were prepared by incipient wetness impregnation (IWI) with ultrasonic aid for adsorptive desulfurization of commercial diesel and simulated fuels. The sorbents were characterized by N2 adsorption-desorption, XRD, NH3-TPD, Py-FT-IR, HRTEM, SEM and atomic absorption spectroscopy techniques. The analysis results confirmed that Aluminum atoms entered the framework and 20%Ni-AlKIT-6(15) can still retain three dimensional structure of AlKIT-6(15) and Ni is highly dispersed in the support. The kinetic pseudo second-order model and Langmuir isotherm are shown to exhibits the best fits of experimental data for the adsorption of thiophene (T), benzothiophene (BT) and dibenzothiophene (DBT) over AlKIT -6 and 5-30%Ni-AlKIT-6. Intraparticle diffusion and steric hindrance were the rate controlling step of the adsorption of T and DBT over AlKIT-6(15) and 20%Ni-AlKIT-6(15) as verified through the intraparticle diffusion model. The characterization of regenerated 20%Ni-AlKIT-6(15) revealed that three-dimensional cubic Ia3d symmetric structure was maintained in the sorbent after 6 successive desulfurization-regeneration cycles.

Optics, Optique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Matériaux optiques, Optical materials, Matériaux à bande interdite photonique interdite, Photonic bandgap materials, Bande interdite photonique, Photonic band gap, Constante diélectrique, Permittivity, Cristal photonique, Photonic crystals, Indice réfraction, Refractive index, Matériau diélectrique, Dielectric materials, Matériau isotrope, Isotropic material, Material isótropo, Matériau optique, Optical materials, Métamatériau, Metamaterial, Onde plane, Plane waves, Plasma, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Tellure, Tellurium, Zone Brillouin, Brillouin zones, 4270Q, Anisotropic photonic band gaps, Flatbands, Metamaterials, Plane wave expansion method, and Three-dimensional photonic crystals

In this paper, the properties of anisotropic photonic band gaps (PBGs) for three-dimensional (3D) photonic crystals (PCs) composed of tellurium (Te) spheres (the uniaxial materials) in homogeneous single-negative metamaterials (epsilon-negative materials) background with high-symmetry (simple-cubic) lattices are theoretically investigated based on the plane wave expansion method. The equations for calculating the anisotropic PBGs in the first irreducible Brillouin zone are theoretically deduced. The influences of the ordinary-refractive index, extraordinary-refractive index, filling factor of dielectric, the electronic plasma frequency, the dielectric constant of epsilon-negative materials on the anisotropic PBGs are also studied in detail, respectively, and some corresponding physical explanations are also given. The numerical results show that the anisotropy can open partial band gaps in simple-cubic lattices and the complete PBGs also can be achieved compared to such 3D PCs doped by the conventional isotropic materials. It also is shown that the anisotropic PBGs can be manipulated by the parameters as mentioned above. Introducing the uniaxial materials into 3D dielectric-epsilon-negative materials PCs can enlarge the PBGs, and also provide a way to obtain the complete PBGs as such kind of 3D PCs with high-symmetry lattices.

Computer science, Informatique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs à structure composée, Compound structure devices, Circuits intégrés, Integrated circuits, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Analyse contrainte, Stress analysis, Análisis tensión, Atterrissage, Landing, Aterrizaje, Conception circuit, Circuit design, Diseño circuito, Consommation énergie, Energy consumption, Consumo energía, Contrainte thermomécanique, Thermomechanical stress, Tensión termomecánica, Facteur forme, Form factor, Factor forma, Facteur puissance, Power factor, Factor potencia, Fiabilité, Reliability, Fiabilidad, Fuite, Leak, Salida, Modélisation, Modeling, Modelización, Méthode superposition, Superposition method, Método superposición, Méthode élément fini, Finite element method, Método elemento finito, Méthodologie, Methodology, Metodología, Optimisation, Optimization, Optimización, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Trou interconnexion, Via hole, and Agujero interconexión

Three-dimensional integrated circuit (3D IC) with through-silicon-via (TSV) is believed to offer new levels of efficiency, power, performance, and form-factor advantages over the conventional 2D IC. However, 3D IC involves disruptive manufacturing technologies compared to conventional 2D IC. TSVs cause significant thermomechanical stress that may seriously affect performance, leakage, and reliability of circuits. In this paper, we discuss an efficient and accurate full-chip thermomechanical stress and reliability analysis tool as well as a design optimization methodology to alleviate mechanical reliability issues in 3D ICs. First, we analyze detailed thermomechanical stress induced by TSVs in conjunction with various associated structures such as landing pad and dielectric liner. Then, we explore and validate the linear superposition principle of stress tensors and demonstrate the accuracy of this method against detailed finite element analysis (FEA) simulations. Next, we apply this linear superposition method to full-chip stress simulation and a reliability metric named the von Mises yield criterion. Finally, we propose a design optimization methodology to mitigate the mechanical reliability problems in 3D ICs.

Crystallography, Cristallographie cristallogenèse, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Propriétés optiques des matériaux massifs et des couches minces, Optical properties of bulk materials and thin films, Photoluminescence, Amine, Amines, Bismuth, Diffraction RX, XRD, Durée vie, Lifetime, Fluorescence, Luminescence, Monocristal, Monocrystals, Ouverture optique, Aperture, Abertura óptica, Petite ouverture, Apertures, Photoluminescence, Propriété optique, Optical properties, Réaction dirigée, Template reaction, Reacción dirigida, Résolution temporelle, Time resolution, Spectre résolution temporelle, Time resolved spectra, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Structure lamellaire, Lamellar structure, Estructura lamelar, Structure ouverte, Open framework, Estructura abierta, Sulfate, Sulfates, Bismuth sulphates, Layered compound, Open-framework, and Three-dimensional structure

Two organically-templated bismuth sulfates of the compositions, [C6N2H14] [Bi(SO4)2(NO3)], (1) and [C4N2Hi2]4[Bi4(SO4)10(H2O)4], (2), with open architecture have been synthesized and their structures determined by single crystal X-ray diffraction. 1 has a corrugated layered structure with 8-membered aperture wherein the SO4 tetrahedra and the BiO8 polyhedra join together to form (4, 4) net sheets of the metal centers while 2 has a three-dimensional structure possessing 8- and 12-membered channels. Both the compounds show good fluorescence properties exhibiting blue luminescence. Time-resolved fluorescence behavior of 1 and 2 shows mean fluorescence life time of 0.9 and 1.0 ns, respectively.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Affichage, Display, Affichage 3 dimensions, Three-dimensional displays, Application médicale, Medical application, Aplicación medical, Apprentissage, Learning, Aprendizaje, Equipement affichage, Display equipment, Equipo visualización, Evaluation performance, Performance evaluation, Evaluación prestación, Facteur humain, Human factor, Factor humano, Image tridimensionnelle, Tridimensional image, Imagen tridimensional, Relation homme machine, Man machine relation, Relación hombre máquina, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Stéréoscopie, Stereoscopy, Estereoscopia, Vision binoculaire, Binocular vision, Visión binocular, Vision stéréoscopique, Stereopsis, Visión estereoscópica, Visualisation, Visualization, Visualización, Depth perception, Human factors, S3D, and Three-dimensional display

To answer the question: what is 3D good for? we reviewed the body of literature concerning the performance implications of stereoscopic 3D (S3D) displays versus non-stereo (2D or monoscopic) displays. We summarized results of over 160 publications describing over 180 experiments spanning 51 years of research in various fields including human factors psychology/engineering, human―computer interaction, vision science, visualization, and medicine. Publications were included if they described at least one task with a performance-based experimental evaluation of an S3D display versus a non-stereo display under comparable viewing conditions. We classified each study according to the experimental task(s) of primary interest: (a) judgments of positions and/or distances; (b) finding, identifying, or classifying objects; (c) spatial manipulations of real or virtual objects; (d) navigation; (e) spatial understanding, memory, or recall and (f) learning, training, or planning. We found that S3D display viewing improved performance over traditional non-stereo (2D) displays in 60% of the reported experiments. In 15% of the experiments, S3D either showed a marginal benefit or the results were mixed or unclear. In 25% of experiments, S3D displays offered no benefit over non-stereo 2D viewing (and in some rare cases, harmed performance). From this review, stereoscopic 3D displays were found to be most useful for tasks involving the manipulation of objects and for finding/identifying/classifying objects or imagery. We examine instances where S3D did not support superior task performance. We discuss the implications of our findings with regard to various fields of research concerning stereoscopic displays within the context of the investigated tasks.

Telecommunications, Télécommunications, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Telecommunications et theorie de l'information, Telecommunications and information theory, Théorie de l'information, du signal et des communications, Information, signal and communications theory, Théorie du signal et des communications, Signal and communications theory, Codage, codes, Coding, codes, Télécommunications, Telecommunications, Systèmes, réseaux et services de télécommunications, Systems, networks and services of telecommunications, Transmission et modulation (techniques et équipements), Transmission and modulation (techniques and equipments), Radiocommunications, Antennes, Antennas, Equipements et installations, Equipments and installations, Radiocommunications du service mobile, Mobile radiocommunication systems, Algorithme, Algorithm, Algoritmo, Antenne réseau, Antenna array, Antena red, Bande base, Base band, Banda base, Circuit codeur, Coding circuit, Circuito codificación, Circuit à signal mixte, Mixed signal circuit, Circuito de señal mixto, Codage, Coding, Codificación, Consommation électricité, Electric power consumption, Consumo electricidad, Emetteur récepteur, Transceiver, Emisor receptor, Evaluation performance, Performance evaluation, Evaluación prestación, Formation voie, Beam forming, Formación haz, Grande puissance, High power, Gran potencia, Implémentation, Implementation, Implementación, Onde millimétrique, Millimetric wave, Onda milimétrica, Prétraitement, Pretreatment, Pretratamiento, Radiocommunication service mobile, Mobile radiocommunication, Radiocomunicación servicio móvil, Réseau cellulaire, Cell network, Red celular, Signalisation, Signalling, Señalización, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Système MIMO, MIMO system, Sistema MIMO, Système grande taille, Large scale system, Sistema gran escala, Traitement analogique, Analog processing, Tratamiento analógico, Télécommunication sans fil, Wireless telecommunication, Telecomunicación sin hilo, Approche multi-flux, Multi-stream approach, Réseau d'antennes, Millimeter wave, antenna arrays, basis pursuit, beamforming, cellular communication, limited feedback, multiple-input multiple-output (MIMO), precoding, sparse reconstruction, and sparsity

Millimeter wave (mmWave) signals experience orders-of-magnitude more pathloss than the microwave signals currently used in most wireless applications and all cellular systems. MmWave systems must therefore leverage large antenna arrays, made possible by the decrease in wavelength, to combat pathloss with beamforming gain. Beamforming with multiple data streams, known as precoding, can be used to further improve mmWave spectral efficiency. Both beamforming and precoding are done digitally at baseband in traditional multi-antenna systems. The high cost and power consumption of mixed-signal devices in mmWave systems, however, make analog processing in the RF domain more attractive. This hardware limitation restricts the feasible set of precoders and combiners that can be applied by practical mmWave transceivers. In this paper, we consider transmit precoding and receiver combining in mmWave systems with large antenna arrays. We exploit the spatial structure of mmWave channels to formulate the precoding/combining problem as a sparse reconstruction problem. Using the principle of basis pursuit, we develop algorithms that accurately approximate optimal unconstrained precoders and combiners such that they can be implemented in low-cost RF hardware. We present numerical results on the performance of the proposed algorithms and show that they allow mmWave systems to approach their unconstrained performance limits, even when transceiver hardware constraints are considered.

Electronics, Electronique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Transport électronique dans les multicouches, nanomatériaux et nanostructures, Electronic transport in multilayers, nanoscale materials and structures, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Dispositif optoélectronique, Optoelectronic device, Dispositivo optoelectrónico, Anthracène, Anthracene, Antraceno, Couche active, Active layer, Capa activa, Courant photoélectrique, Photoelectric current, Corriente fotoeléctrica, Dérivé de l'anthracène, Anthracene derivatives, Antraceno derivado, Eclairement, Illumination, Alumbrado, Fonction réponse, Response function, Función respuesta, Gain, Ganancia, Haute performance, High performance, Alto rendimiento, Lumière verte, Green light, Luz verde, Monocristal, Single crystal, Méthode en solution, Growth from solution, Método en solución, Photoconductivité, Photoconductivity, Fotoconductividad, Photodétecteur, Photodetector, Fotodetector, Phénomène transport, Transport process, Fenómeno transporte, Propriété interface, Interface properties, Propiedad interfase, Semiconducteur organique, Organic semiconductors, Silane organique, Organic silane, Silano orgánico, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Température ambiante, Room temperature, Temperatura ambiente, Transport charge, Charge transport, 8560G, Detectivity, Mobility, and Organic semiconductor

A new triisopropylsilylethynyl anthracene derivative was synthesized with extended aromatic groups at the 2- and 6-positions of anthracene for application in a high-performance photodetector. To optimize charge transport characteristics and photodetection ability, single crystal with high aspect ratio was employed as photo-active semiconductor layer. When operated at room temperature under ambient conditions, the photodetector based on a single crystal showed a sensitive response to green light, with a responsivity >10 A/ W and specific detectivity on the order of 1011 Jones. Based on a systematic analysis of the photocurrent behavior as a function of the interfacial properties, illuminated optical power and the applied bias, the operating mechanism of the photodetector was found to be a gain-generation process.

Crystallography, Cristallographie cristallogenèse, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Structure de solides cristallins particuliers, Structure of specific crystalline solids, Composés organiques, Organic compounds, Clivage, Cleavage, Cristallographie RX, X-ray crystallography, Dépendance température, Temperature dependence, Isomère, Isomers, Ligand, Ligands, Monocristal, Monocrystals, Polymère coordination, Polychelate, Polímero coordinación, Recristallisation, Recrystallization, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Structure cristalline, Crystal structure, Structure moléculaire, Molecular structure, Structure supramoléculaire, Supramolecular structure, Estructura supramolecular, Stéréochimie, Stereochemistry, Topologie, Topology, 6166H, and Na2S

Four coordination polymers of s-block metal ions, namely, Na(I), K(I), and Ba(II) with rctt-cyclobutanetetracarboxylate (rctt-cbtc) ligand were synthesized, and their solid-state structures were determined by X-ray crystallography. Of these, [Na2(rctt-cbtc-H2)(H2O)4] (1) and (2) are supramolecular isomers with mog and pcu topologies. While the three-dimensional structure of [K2(rctt-cbtc)(H2O)2] (3) is constructed based on a (6,8) net, [Ba2(rctt-cbtc)(H2O)6] (4) has fsh topology with (4,6) connectivity. Compounds 1-3 have been found to undergo thermal isomerization, contrary to the expected thermal cleavage of the cyclobutane ring, in the temperature range 200-250 °C cleanly to the rtct isomer in 50-85% yield, but not 4. Interestingly, recrystallization of the isomerized product of 1 yielded single crystals of [Na3(rtct-cbtc-H)(H2O)3]n (5). Although the composition has changed in this process, the stereochemistry at the cyclobutane ring was confirmed in this three-dimensional coordination polymer with a new topology.

Biotechnology, Biotechnologies, Energy, Énergie, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Rayonnement solaire, Solar radiation, Durée insolation, Sunshine duration, Duración insolación, Ensoleillement, Sunshine, Soleamiento, Etude comparative, Comparative study, Estudio comparativo, Logique floue, Fuzzy logic, Lógica difusa, Modèle logique, Logic model, Modelo lógico, Rayonnement solaire, Solar radiation, Radiación solar, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Zone urbaine, Urban area, Zona urbana, ANFIS, Angström-Prescott, Model, Solar irradiation, and Temporal dependency

Solar irradiation calculations depend on atmospheric variations and sunshine duration record interval. Generally, it is calculated by using the classical Angström-Prescott equation, which provides a linear relationship between the solar irradiation and sunshine duration. Also few 2nd and 3rd degree solar radiation and sunshine duration models are proposed by different authors. Natural events do not have temporal and spatial independent structures. In this paper, three solar irradiation models are used for solar radiation examination in three of the southern cities, Adana, Antakya and Silifke in Turkey. One of these models are proposed in this work as dependency model and this is compared with the Angström-Prescott model and fuzzy logic ANFIS model. The comparison illustrates that dependency model is superior over other approaches.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs à structure composée, Compound structure devices, Transistors, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Autoalignement, Self alignment, Autoalineación, Basse tension, Low voltage, Baja tensión, Electronique organique, Organic electronics, Electrónica orgánica, Empilement, Stacking, Apilamiento, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Faisabilité, Feasibility, Practicabilidad, Formation motif, Patterning, Formacíon motivo, Largeur raie, Line width, Anchura raya espectral, Lithographie faisceau électron, Electron beam lithography, Litografía haz electrón, Lithographie sans masque, Maskless lithography, Litografía sin máscara, Matière active, Active material, Materia activa, Mode empilement, Stacking sequence, Modo apilamiento, Modèle 3 dimensions, Three dimensional model, Modelo 3 dimensiones, Multicouche, Multiple layer, Capa múltiple, Polymère, Polymer, Polímero, Régime fonctionnement, Operating rate, Régimen funcionamiento, Résist, Resist, Resistencia, Signal sortie, Output signal, Señal salida, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Structure sandwich, Sandwich structure, Estructura sandwich, Technologie autoalignée, Self aligned technology, Tecnología rejilla autoalineada, Thiophène dérivé polymère, Thiophene derivative polymer, Tiofeno derivado polímero, Transistor vertical, Vertical transistor, 8105L, 8116N, 8116R, 8540H, Ecriture directe, Direct writing, Multilayer patterning, and Vertical organic transistor

Electron beam lithography in multilayer of resist including an intermediate metallic layer is proposed for fabrication of novel three dimensional structures. The feasibility of the proposed process and the possible line width resolution has been analyzed. A Self-aligned vertical stack of polymer with an intermediate metallic layer has been achieved using the technique. The three dimensional pattern has been shown to facilitate fabrication of vertical organic transistor. A vertical organic transistor with poly(3-hexylthiophene) as active material is fabricated. The transistor shows high current output at low operating voltage. The direct write technique consists of minimum number of steps and is capable of providing well defined gate geometry for the transistor in contrast with other non-lithographic techniques.

Pneumology, Pneumologie, Sciences biologiques et medicales, Biological and medical sciences, Sciences medicales, Medical sciences, Pneumologie, Pneumology, Immunostimulation, Inmunoestimulación, Pathologie de l'appareil respiratoire, Respiratory disease, Aparato respiratorio patología, Poumon, Lung, Pulmón, Protéine, Protein, Proteína, Structure 3 dimensions, Three dimensional structure, and Estructura 3 dimensiones

The lung constantly interacts with numerous pathogens. Thus, complex local immune defence mechanisms are essential to recognise and dispose of these intruders. This work describes the detection, characterisation and three-dimensional structure of a novel protein of the lung (surfactant-associated protein 3 (SFTA3/SP-H)) with putative immunological features. Bioinformatics, biochemical and immunological methods were combined to elucidate the structure and function of SFTA3. The tissue-specific detection and characterisation was performed by using electron microscopy as well as fluorescence imaging. Three-dimensional structure generation and analysis led to the development of specific antibodies and, as a consequence, to the localisation of a novel protein in human lung under consideration of cystic fibrosis, asthma and sepsis. In vitro experiments revealed that lipopolysaccharide induces expression of SFTA3 in the human lung alveolar type II cell line A549. By contrast, the inflammatory cytokines interleukin (IL)-1β and IL-23 inhibit expression of SFTA3 in A549. Sequence- and structure-based prediction analysis indicated that the novel protein is likely to belong to the family of lung surfactant proteins. The results suggest that SFTA3 is an immunoregulatory protein of the lung with relevant protective functions during inflammation at the mucosal sites.

Telecommunications, Télécommunications, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Telecommunications et theorie de l'information, Telecommunications and information theory, Théorie de l'information, du signal et des communications, Information, signal and communications theory, Théorie du signal et des communications, Signal and communications theory, Signal, bruit, Signal, noise, Détection, estimation, filtrage, égalisation, prédiction, Detection, estimation, filtering, equalization, prediction, Traitement du signal, Signal processing, Traitement des images, Image processing, Traitement image, Image processing, Procesamiento imagen, Algorithme, Algorithm, Algoritmo, Approche probabiliste, Probabilistic approach, Enfoque probabilista, Bruit additif, Additive noise, Ruido aditivo, Bruit gaussien, Gaussian noise, Ruido gaussiano, Capteur imagerie hyperspectral, Hyperspectral imaging sensor, Sensor hiperespectral de formación de imágenes, Champ aléatoire, Random field, Campo aleatorio, Combinaison linéaire, Linear combination, Combinación lineal, Effet non linéaire, Non linear effect, Efecto no lineal, Estimation paramètre, Parameter estimation, Estimación parámetro, Evaluation performance, Performance evaluation, Evaluación prestación, Facteur réflexion, Reflectance, Coeficiente reflexión, Imagerie hyperspectrale, Hyperspectral imagery, Imaginería hiperespectral, Impureté résiduelle, Residual impurity, Impureza residual, Modèle Markov, Markov model, Modelo Markov, Modèle non linéaire, Non linear model, Modelo no lineal, Phénomène non linéaire, Non linear phenomenon, Fenómeno no lineal, Précision, Accuracy, Precisión, Simulation, Simulación, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Démélange d'images, Image unmixing, nonlinear spectral unmixing, nonlinearity detection, and residual component analysis

This paper presents a nonlinear mixing model for joint hyperspectral image unmixing and nonlinearity detection. The proposed model assumes that the pixel reflectances are linear combinations of known pure spectral components corrupted by an additional nonlinear term, affecting the end members and contaminated by an additive Gaussian noise. A Markov random field is considered for nonlinearity detection based on the spatial structure of the nonlinear terms. The observed image is segmented into regions where nonlinear terms, if present, share similar statistical properties. A Bayesian algorithm is proposed to estimate the parameters involved in the model yielding a joint nonlinear unmixing and nonlinearity detection algorithm. The performance of the proposed strategy is first evaluated on synthetic data. Simulations conducted with real data show the accuracy of the proposed unmixing and nonlinearity detection strategy for the analysis of hyperspectral images.

Electronics, Electronique, Computer science, Informatique, Telecommunications, Télécommunications, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Electronique de puissance, alimentations électriques, Power electronics, power supplies, Alimentation électrique, Power supply, Alimentación eléctrica, Circuit intégré, Integrated circuit, Circuito integrado, Conception assistée, Computer aided design, Concepción asistida, Conception circuit, Circuit design, Diseño circuito, Consommation électricité, Electric power consumption, Consumo electricidad, Densité intégration, Integration density, Densidad integración, Electronique faible puissance, Low-power electronics, Electronique puissance, Power electronics, Electrónica potencia, Empilement, Stacking, Apilamiento, Grande puissance, High power, Gran potencia, Implantation circuit intégré, Integrated circuit layout, Interconnexion, Interconnection, Interconexión, Modèle 3 dimensions, Three dimensional model, Modelo 3 dimensiones, Réseau électrique, Electrical network, Red eléctrica, Silicium, Silicon, Silicio, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Technologie planaire, Planar technology, Tecnología planar, Trou interconnexion, Via hole, and Agujero interconexión

Three-dimensional (3D) integrated circuits, which use a vertically stacked design of 2D planar chips in a 3D arrangement using through-silicon-via (TSV) technology have been developed to minimise chip footprint, enable higher integration density, decrease power consumption and reduce fabrication cost. Floorplanning without considering power can increase the number of power TSVs and bumps needed to solve IR drop constraint in 3D power delivery network. In this study, the authors propose a methodology for minimising the power TSVs and bumps based on power-aware floorplanning using specific power patterns to solve IR drop constraint on the 3D power delivery network. The authors' methodology moves high power-consuming blocks to the dedicated pattern area which is able to minimise the number of power TSVs and bumps while solving the IR drop constraint. The simulation results show that the proposed method can reduce the total number of power TSVs and bumps by 13.7 and 12.2%, respectively, after power-aware floorplanning while solving the IR drop constraint.

Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Transformation de matériaux métalliques, Production techniques, Traitements de surface, Surface treatment, Polissage. Grenaillage. Ebavurage. Ecriquage, Polishing. Blast cleaning, Acier, Steel, Acero, Déformation plastique, Plastic deformation, Deformación plástica, Plastische Verformung, Grenaillage, Shot peening, Granalla, Kugelstrahlen, Mesure sans contact, Non contact measurement, Medida sin contacto, Behuehrungsloses Messen, Modélisation, Modeling, Modelización, Morphologie surface, Surface morphology, Méthode élément fini, Finite element method, Método elemento finito, Finite Element Methode, Profilométrie, Profilometry, Perfilometría, Profilometrie, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Temps traitement, Processing time, Tiempo proceso, Ultrason, Ultrasound, Ultrasonido, Ultraschall, Acier AISI 1018, AISI-1018 steel, Finite element modelling, and Ultrasonic shot peening

Surface morphology of severely plastically deformed AISI-1018 steel plates, induced by ultrasonic shot peening process, was investigated by using finite element method and experiments. Experiments were conducted and the surface morphology of the peened samples was measured by non-contact 3D profilometry. Effect of the diameter of the shot and processing time on the surface morphology of the samples was investigated and discussed. In addition, a three dimensional FE simulation model was developed to simulate the deformation and plastic strain of the peened surface after single impact. And a numerical algorithm was proposed to predict the surface morphology of the sample after multiple impacts. The proposed algorithm was verified experimentally and the simulation results show a reasonable agreement with the experimental results.

Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Propriétés de transport (non électroniques), Transport properties of condensed matter (nonelectronic), Diffusion dans les solides, Diffusion in solids, Diffusion dans les nanomatériaux et nanostructures, Diffusion in nanoscale solids, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Additif, Additive, Aditivo, Adsorption, Adsorción, Ajustement courbe, Curve fitting, Ajustamiento curva, Circuit intégré, Integrated circuit, Circuito integrado, Condition aux limites, Boundary condition, Condiciones límites, Cuivre, Copper, Cobre, Densité courant, Current density, Densidad corriente, Diffusion(transport), Diffusion, Electrolyte, Electrólito, Interconnexion, Interconnection, Interconexión, Interface, Interfase, Lanthane Manganite, Lanthanum Manganites, Lantano Manganito, Optimisation, Optimization, Optimización, Paramètre cinétique, Kinetic parameter, Parámetro cinético, Prévision, Forecasting, Previsión, Simulation numérique, Numerical simulation, Simulación numérica, Strontium Manganite, Strontium Manganites, Estroncio Manganito, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Trou interconnexion, Via hole, Agujero interconexión, Vérification, Verification, Verificación, 6630P, Copper electro-chemical deposition, Superfilling, Tafel curve, and Through silicon via

Copper electro-chemical deposition (ECD) of through silicon via (TSV) is a key challenge of 3D integration. This paper presents a numerical modeling of TSV filling concerning the influence of the accelerator and the suppressor. The diffusion-adsorption model was used in the simulation and effects of the additives were incorporated in the model. The boundary conditions were derived from a set of experimental Tafel curves with different concentrations of additives, which provided a quick and accurate way for copper ECD process prediction without complicated surface kinetic parameters fitting. The level set method (LSM) was employed to track the copper and electrolyte interface. The simulation results were in good agreement with the experiments. For a given feature size, the current density for superfilling could be predicted, which provided a guideline for ECD process optimization.