articles+ search results

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Physicochimie des polymeres, Physicochemistry of polymers, Polymères organiques, Organic polymers, Propriétés et caractérisation, Properties and characterization, Propriétés de surface, Surface properties, Aluminisation, Aluminizing, Aluminizacion, Aluminium, Aluminio, Ethylène téréphtalate polymère, Ethylene terephthalate polymer, Etileno tereftalato polímero, Interface, Interfase, Rétrodiffusion Rutherford, Rutherford backscattering, Retrodifusión Rutherford, Traitement surface, Surface treatment, and Tratamiento superficie

In the present work, the carbon-to-oxygen ratio of Mylar (in the form of aluminized Mylar) and the aluminum-Mylar interface character have been studied using a proton elastic backscattering method at five different incident energies ranging from 1.67 to 3.74 MeV. Using the available proton elastic scattering cross-section data of C and O, a proton backscattered spectrum of Mylar for a proton energy of 1.67 MeV was simulated. Best fitting of the simulated spectrum was achieved for a bulk carbon-to-oxygen ratio of 2.39±0.06 and a linearly varying ratio between 1.63 and 2.39 at the aluminum-Mylar interface region. The richness of oxygen at the interface region is attributed to stronger binding of aluminum with oxygen.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Ablation, Ablación, Absorption optique, Optical absorption, Absorción óptica, Conductivité électrique, Electrical conductivity, Conductividad eléctrica, Imide polymère, Polyimide, Imida polímero, Irradiation proton, Proton irradiation, Irradiación protón, Traitement surface, Surface treatment, and Tratamiento superficie

High intensity proton pulses of 50 ns length were used to modify polyimide surfaces. The deposited energy and power density were similar to the corresponding experiments with UV laser pulses. Due to the constant range of the protons a well-defined layer of about 1.5 μm is heated. The induced optical absorption, electrical conductivity, and the ablation were studied. The results are consistently explained by a thermal model.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Ablation, Ablación, Ethylène(tétrafluoro) polymère, Tetrafluoroethylene polymer, Etileno(tetrafluoro) polímero, Imide polymère, Polyimide, Imida polímero, Laser, Polymère dopé, Doped polymer, Polímero dopado, Traitement surface, Surface treatment, and Tratamiento superficie

Experimental data on the 248 and 308 nm wavelength excimer laser ablation at poly (tetrafluoroethylene) doped with polymide (PI) are reported for a range of fluences and dopant concentrations. Threshold fluences were determined and a correlation was obtained between the dopant concentration and the threshold fluence. The threshold fluences and the limiting etch rates at high fluences decreased with increasing dopant concentration, and there is a minimum dopant concentration below which there is no ablation at both of the wavelengths. The side wall taper of the ablated holes increased with increasing dopant concentration. At subthreshold fluences, the polymer surface was modified with selective removal of PI from the polymer blend.

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Analyse surface, Surface analysis, Análisis superficie, Copolymère aromatique, Aromatic copolymer, Copolímero aromático, Cétone copolymère, Ketone copolymer, Cetona copolímero, Ether copolymère, Ether copolymer, Eter copolímero, Etude expérimentale, Experimental study, Estudio experimental, Mécanisme action, Mechanism of action, Mecanismo acción, Plasma, Traitement surface, Surface treatment, and Tratamiento superficie

XPS results show that oxygen or ambient air plasma treatment leads to oxidation producing mainly surface ether and carbonyl groups. The reaction with CF4 plasma resulted primarily in the formation of surface carbonates, CF2-CF2 and CF3, with CF2-CF2 as the dominant species. For the reaction with CF4 plasma, the results indicated that cleavage of the polymer aromatic structure is extensive.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Caractéristique électrique, Electrical characteristic, Característica eléctrica, Composé III-V, III-V compound, Compuesto III-V, Composé binaire, Binary compound, Compuesto binario, Composé ternaire, Ternary compound, Compuesto ternario, Etude expérimentale, Experimental study, Estudio experimental, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Indium Arséniure, Indium Arsenides, Indio Arseniuro, Indium Phosphure, Indium Phosphides, Indio Fosfuro, Passivation, Pasivación, Processus fabrication, Production process, Proceso fabricación, Silicium Nitrure, Silicon Nitrides, Silicio Nitruro, Technologie bipolaire, Bipolar technology, Tecnología bipolar, Traitement surface, Surface treatment, Tratamiento superficie, Transistor hétérojonction, Heterojunction transistor, Transistor heterounión, As Ga In, In P, InGaAs, InP, N Si, and SiN

The effects of the SiN layer normally used to passivate and protect the exposed junction surfaces in InP/InGaAs heterojunction bipolar transistors have been studied and shown to degrade the transistor properties. These effects are ascribed primarily to surface damage associated with the high SiN deposition temperature (350°C). A degradation of the emitter-base properties was observed through the nonideal behavior of the base current and the measured short minority-carrier lifetime in the base, extracted by using the base width modulation method. Degradation in the current gain and emitter injection efficiency was also observed.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Analyse surface, Surface analysis, Análisis superficie, Electrisation, Electrostatic electrification, Electrización, Etude expérimentale, Experimental study, Estudio experimental, Mécanisme, Mechanism, Mecanismo, Méthacrylate de méthyle polymère, Methyl methacrylate polymer, Metacrilato de metilo polímero, Plasma, Poudre, Powder, Polvo, Propriété triboélectrique, Triboelectric properties, Propiedad triboeléctrica, Styrène polymère, Styrene polymer, Estireno polímero, Traitement surface, Surface treatment, and Tratamiento superficie

Surfaces of fine polystyrene (PS) and polymethyl methacrylate (PMMA) powders were modified by exposure to the downstream products of a nitrogen or oxygen microwave plasma. After nitrogen plasma treatment, the XPS C 1s peak shapes suggested the formation of amines in the case of PS, and the formation of imines and amides in the case of PMMA. Oxygen plasma treatment appears to result in the formation of hydroxyl and carbonyl groups on the surfaces of both PS and PMMA.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Emissions électronique et ionique; phénomènes d'impact, Electron and ion emission by liquids and solids; impact phenomena, Phénomènes d'impact (incluant les spectres d'électrons et la pulvérisation), Impact phenomena (including electron spectra and sputtering), Autres phénomènes d'impact électronique, Other electron-impact emission phenomena, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Métal transition Alliage, Transition metal Alloys, Metal transición Aleación, Alliage binaire, Binary alloy, Aleación binaria, Cuivre Tungstène Alliage, Copper Tungsten Alloys, Cobre Wolframio Aleación, Cuivre Zinc Alliage, Copper Zinc Alloys, Cobre Zinc Aleación, Etude expérimentale, Experimental study, Estudio experimental, Experimentelle Untersuchung, Etude théorique, Theoretical study, Estudio teórico, Theoretische Untersuchung, Ion, Ions, Ión, Nickel Tungstène Alliage, Nickel Tungsten Alloys, Niquel Wolframio Aleación, Pulvérisation irradiation, Sputtering, Pulverización irradiación, Sputtern, Simulation numérique, Numerical simulation, Simulación numérica, Traitement surface, Surface treatment, Tratamiento superficie, Oberflaechenbehandlung, and Rendement pulvérisation

Emission-angle-integrated yields of neutral atoms and molecules ejected from binary alloys (Cu0.63Zn0.37, Ni0.8W0.2, Cu0.28W0.72) due to Ar+ and Xe+ impact in the energy range from 30 to 1000 eV were determined by means of sputtered-neutral mass spectrometry using a hemispherical specimen arrangement. The yields of small homo- and heteronuclear molecules exhibit a dependence on the respective atom yields, which is characteristic of a statistical formation mechanism and is valid down to very low energies (∼100 eV).

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Propriétés mécaniques et acoustiques; adhérence, Mechanical and acoustical properties; adhesion, Interfaces solide-fluide, Solid-fluid interfaces, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Métal transition Alliage, Transition metal Alloys, Metal transición Aleación, Air, Aire, Luft, Atmosphère humide, Wet atmosphere, Atmósfera humeda, Atmosphère sèche, Dry atmosphere, Atmósfera seca, Cobalt Alliage, Cobalt Alloys, Cobalto Aleación, Cobalt Chrome Molybdène Alliage, Cobalt Chromium Molybdenum Alloys, Cobalto Cromo Molibdeno Aleación, Couche mince, Thin film, Capa fina, Duennschicht, Couche superficielle, Surface layer, Capa superficial, Oberflaechenschicht, Epaisseur, Thickness, Espesor, Dicke, Etude expérimentale, Experimental study, Estudio experimental, Experimentelle Untersuchung, Mode liaison, Binding mode, Modo de enlace, Oxydation, Oxidation, Oxidación, Rayon X, X ray, Rayos X, Roentgenstrahlen, Spectrométrie photoélectron, Photoelectron spectrometry, Espectrometría fotoelectrón, ESCA Spektrometrie, Traitement surface, Surface treatment, Tratamiento superficie, and Oberflaechenbehandlung

The differences and similarities between the compositional details of the layer formed on the surface of a Co-Cr-Mo alloy specimen when exposed for 1h to laboratory air or wet stream are identified. An estimate of the thickness of each of these layers is also obtained.

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Dynamique et vibrations de surface et d'interface, Surface and interface dynamics and vibrations, Structure et morphologie de couches minces, Thin film structure and morphology, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Métal alcalinoterreux, Alkaline earth metal, Metal alcalino-térreo, Erdalkalimetalle, Atmosphère contrôlée, Controlled atmosphere, Atmósfera controlada, Kontrollierte Atmosphaere, Contamination, Contaminación, Couche mince, Thin film, Capa fina, Duennschicht, Etude expérimentale, Experimental study, Estudio experimental, Experimentelle Untersuchung, Evaporation, Evaporación, Impureté, Impurity, Impureza, Begleitelement, Interface solide solide, Solid solid interface, Interfase sólido sólido, Grenzschicht fest fest, Irradiation ion, Ion irradiation, Irradiación ión, Liaison chimique, Chemical bond, Enlace químico, Chemische Bindung, Magnésium, Magnesium, Magnesio, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Wachstumsmechanismus, Méthode phase vapeur, Growth from vapor, Método fase vapor, Plasma, Polymère, Polymer, Polímero, Rayon X, X ray, Rayos X, Roentgenstrahlen, Spectrométrie photoélectron, Photoelectron spectrometry, Espectrometría fotoelectrón, ESCA Spektrometrie, Traitement surface, Surface treatment, Tratamiento superficie, Oberflaechenbehandlung, and Propène polymère

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Propriétés mécaniques et acoustiques; adhérence, Mechanical and acoustical properties; adhesion, Interfaces solide-fluide, Solid-fluid interfaces, Atmosphère contrôlée, Controlled atmosphere, Atmósfera controlada, Composé minéral, Inorganic compound, Compuesto inorgánico, Effet température, Temperature effect, Efecto temperatura, Etude expérimentale, Experimental study, Estudio experimental, Face cristalline, Crystal face, Cara cristal, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Microscopie tunnel balayage, Scanning tunneling microscopy, Microscopía túnel barrido, Oxydation, Oxidation, Oxidación, Oxyde, Oxides, Óxido, Rayon X, X ray, Rayos X, Semiconducteur, Semiconductor materials, Semiconductor(material), Soufre, Sulfur, Azufre, Spectrométrie Auger, Auger electron spectrometry, Espectrometría Auger, Spectrométrie photoélectron, Photoelectron spectrometry, Espectrometría fotoelectrón, Texture, Textura, Topographie, Topography, Topografía, Traitement surface, Surface treatment, Tratamiento superficie, Traitement thermique, Heat treatment, and Tratamiento térmico

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Analyse surface, Surface analysis, Análisis superficie, Attaque chimique, Chemical etching, Ataque químico, Bore, Boron, Boro, Diagramme diffraction, Diffraction pattern, Diagrama difracción, Dopage, Doping, Etude expérimentale, Experimental study, Estudio experimental, Face cristalline, Crystal face, Cara cristal, Facteur structure, Structure factor, Factor estructura, Microscopie électronique transmission, Transmission electron microscopy, Microscopía electrónica transmisión, Polissage mécanique, Mechanical polishing, Pulido mecánico, Pulvérisation faisceau ionique, Ion beam sputtering, Pulverización haz iónico, Reconstruction surface, Surface reconstruction, Reconstrucción superficie, Semiconducteur, Semiconductor materials, Semiconductor(material), Silicium, Silicon, Silicio, Simulation ordinateur, Computer simulation, Simulación computadora, Traitement surface, Surface treatment, and Tratamiento superficie

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Technique du vide, Vacuum apparatus and techniques, Chambre à vide, Vacuum chamber, Cámara de vacío, Méthode électrochimique, Electrochemical method, Método electroquímico, Technique vide, Vacuum technique, Técnica vacío, Topographie, Topography, Topografía, Traitement surface, Surface treatment, Tratamiento superficie, Ultravide, Ultrahigh vacuum, and Ultravacío

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Propriétés mécaniques et acoustiques; adhérence, Mechanical and acoustical properties; adhesion, Interfaces solide-fluide, Solid-fluid interfaces, Métal transition Composé, Transition metal Compounds, Metal transición Compuesto, Composé minéral, Inorganic compound, Compuesto inorgánico, Couche mince, Thin film, Capa fina, Etude expérimentale, Experimental study, Estudio experimental, Mécanisme, Mechanism, Mecanismo, Oxydation, Oxidation, Oxidación, Profil raie spectrale, Spectral line profile, Perfil raya espectral, Spectrométrie absorption RX, X ray absorption spectrometry, Espectrometría absorción RX, Titane Nitrure, Titanium Nitrides, Titanio Nitruro, Titane Oxyde, Titanium Oxides, Titanio Óxido, Traitement surface, Surface treatment, and Tratamiento superficie

The analysis of the results on the oxidation of TiN in an oxygen flow at temperatures in the range 300-500°C indictaes that O progressively displaces N to form TiO2. The process appears to be controlled by the temperature dependence of the oxygen diffusion. Some oxidation is observed to take place even at room temperature. No evidence of oxynitride formation was found in thermally oxidized TiN, instead complete phase separation is observed. The interface between TiO2 and TiN seems to be very abrupt.

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Métal transition Alliage, Transition metal Alloys, Metal transición Aleación, Adsorption, Adsorción, Atmosphère contrôlée, Controlled atmosphere, Atmósfera controlada, Kontrollierte Atmosphaere, Carbone monoxyde, Carbon monoxide, Carbono monóxido, Kohlenmonoxid, Composition chimique, Chemical composition, Composición química, Chemische Zusammensetzung, Eau, Water, Agua, Wasser, Effet température, Temperature effect, Efecto temperatura, Temperatureinfluss, Energie liaison, Binding energy, Energía enlace, Bindungsenergie, Etude expérimentale, Experimental study, Estudio experimental, Experimentelle Untersuchung, Getter, Haute température, High temperature, Alta temperatura, Hochtemperatur, Interface fluide solide, Fluid solid interface, Interfase fluido sólido, Oxygène, Oxygen, Oxígeno, Sauerstoff, Rayon X, X ray, Rayos X, Roentgenstrahlen, Réactivité, Reactivity, Reactividad, Reaktionsfaehigkeit, Spectrométrie photoélectron, Photoelectron spectrometry, Espectrometría fotoelectrón, ESCA Spektrometrie, Structure interface, Interface structure, Estructura interfaz, Traitement surface, Surface treatment, Tratamiento superficie, Oberflaechenbehandlung, Zirconium Fer Vanadium Alliage, Zirconium Iron Vanadium Alloys, Zirconio Hierro Vanadio Aleación, Gaz réactif, and Getter alloys

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Propriétés mécaniques et acoustiques; adhérence, Mechanical and acoustical properties; adhesion, Interfaces solide-fluide, Solid-fluid interfaces, Métal transition Composé, Transition metal Compounds, Metal transición Compuesto, Attaque chimique, Chemical etching, Ataque químico, Composé minéral, Inorganic compound, Compuesto inorgánico, Couche superficielle, Surface layer, Capa superficial, Dislocation, Dislocación, Défaut cristallin, Crystal defect, Defecto cristalino, Emission RX, X ray emission, Emisión RX, Etude expérimentale, Experimental study, Estudio experimental, Faisceau laser, Laser beam, Haz láser, Ferrites, Ferritas, Impureté, Impurity, Impureza, Irradiation, Irradiación, Manganèse Zinc Oxyde Mixte, Manganese Zinc Oxides Mixed, Manganeso Zinc Óxido Mixto, Rétrodiffusion Rutherford, Rutherford backscattering, Retrodifusión Rutherford, Surface, Superficie, Traitement surface, Surface treatment, and Tratamiento superficie

Surface damage induced by laser etching of a Mn-Zn ferrite has been investigated by Rutherford backscattering spectrometry and proton-induced x-ray emission measurements. It is found that laser-induced etching of the Mn-Zn ferrite in both CCl4 gas and H3PO4 could cause surface damage that is much less than that induced by mechanical polishing. The laser-induced surface damage is distributed in a thin surface layer with a thickness of 50 nm.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Carbone, Carbon, Carbono, Composé minéral, Inorganic compound, Compuesto inorgánico, Concentration porteur charge, Charge carrier concentration, Concentración portador carga, Couche mince, Thin film, Capa fina, Diffraction électron réflexion, Reflection high energy electron diffraction, Difracción electrón reflexión, Dopage, Doping, Etude expérimentale, Experimental study, Estudio experimental, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Hydrogénation, Hydrogenation, Hidrogenación, Mobilité porteur charge, Charge carrier mobility, Movilidad portador carga, Mode opératoire, Operating mode, Método operatorio, Plasma, Propriété électrique, Electrical properties, Propiedad eléctrica, Résonance cyclotronique électronique, Electron cyclotron resonance, Resonancia ciclotrónica electrónica, Semiconducteur, Semiconductor materials, Semiconductor(material), Spectrométrie SIMS, Secondary ion mass spectrometry, Espectrometría SIMS, Traitement surface, Surface treatment, and Tratamiento superficie

We report surface cleaning of C-doped p+-GaAs epilayers with hydrogen electron cyclotron resonance plasma. Native oxides on the surface of the p+-GaAs layer can be removed at a very low substrate temperature of 150°C. In addition, carrier concentrations decrease after cleaning at about 300°C, which is attributed to the hydrogenation of carbon acceptors caused by hydrogen plasma exposure. A cleaning temperature of about 400°C, a cleaning time of about 5 min, and microwave power of about 30 W appear to be optimum for the regrowth process.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Résonances et relaxations magnétiques dans l'état condensé, effet mössbauer, Magnetic resonances and relaxations in condensed matter, mössbauer effect, Résonance et relaxation paramagnétiques électroniques, Electron paramagnetic resonance and relaxation, Centres colorés et autres défauts, Color centers and other defects, Composé minéral, Inorganic compound, Compuesto inorgánico, Défaut, Defect, Defecto, Etude expérimentale, Experimental study, Estudio experimental, Facteur g, g factor, Factor g, Interface solide solide, Solid solid interface, Interfase sólido sólido, Largeur raie spectrale, Spectral line width, Anchura raya espectral, Profil raie spectrale, Spectral line profile, Perfil raya espectral, Relaxation structurale, Structure relaxation, Relajación estructural, Résonance paramagnétique électronique, Electron paramagnetic resonance, Resonancia paramagnética electrónica, Semiconducteur, Semiconductor materials, Semiconductor(material), Silicium Oxyde, Silicon Oxides, Silicio Óxido, Silicium, Silicon, Silicio, Traitement surface, Surface treatment, and Tratamiento superficie

Electron-spin-resonance (ESR) studies of intrinsic Pb defects at the (111)Si/SiO2 interface have been carried out as a function of oxidation temperature Tox for the range 22

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Dynamique et vibrations de surface et d'interface, Surface and interface dynamics and vibrations, Structure et morphologie de couches minces, Thin film structure and morphology, Cinétique, Kinetics, Cinética, Couche mince, Thin film, Capa fina, Dépôt chimique phase vapeur, Chemical vapor deposition, Depósito químico fase vapor, Etat amorphe, Amorphous state, Estado amorfo, Etude expérimentale, Experimental study, Estudio experimental, Interface solide solide, Solid solid interface, Interfase sólido sólido, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Méthode phase vapeur, Growth from vapor, Método fase vapor, Passivation, Pasivación, Photoconductivité, Photoconductivity, Fotoconductividad, Recuit, Annealing, Recocido, Relaxation structurale, Structure relaxation, Relajación estructural, Semiconducteur, Semiconductor materials, Semiconductor(material), Support, Soporte, Température, Temperature, Temperatura, Traitement surface, Surface treatment, Tratamiento superficie, Silicium amorphe hydrogéné, and Hydrogenated amorphous silicon

In situ measurements of the transient photoconductivity during the deposition of amorphous silicon films on single-crystalline silicon substrates indicate a drastic increase of the surface recombination at the interface immediately after the start of the plasma discharge. This can be attributed to an initial damage of the substrate surface by impact of plasma-induced species on the silicon surface. The subsequent deposition of amorphous silicon films leads to a quenching of this plasma-induced surface recombination where this quenching process is faster at higher deposition temperatures.

Atomic molecular physics, Physique atomique et moléculaire, Condensed state physics, Physique de l'état condensé, Polymers, paint and wood industries, Polymères, industries des peintures et bois, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Effets physiques d'irradiation, défauts d'irradiation, Physical radiation effects, radiation damage, Rayonnement γ, γ ray effects, Métal transition Complexe, Transition metal Complexes, Metal transición Complejo, Solvate, Solvatado, Basse température, Low temperature, Baja temperatura, Cadmium Complexe, Cadmium Complexes, Cadmio Complejo, Capture électron, Electron capture, Captura electrón, Clathrate, Clatrato, Complexe ammino, Ammino complex, Complejo ammina, Complexe cyano, Cyano complex, Complejo ciano, Complexe isocyano, Isocyano complex, Complejo isociano, Etude expérimentale, Experimental study, Estudio experimental, Facteur g, g factor, Factor g, Irradiation gamma, Gamma irradiation, Irradiación gama, Monocristal, Single crystal, Nickel Complexe, Nickel Complexes, Niquel Complejo, Propriété magnétique, Magnetic properties, Propiedad magnética, Résonance paramagnétique électronique, Electron paramagnetic resonance, Resonancia paramagnética electrónica, Structure moléculaire, Molecular structure, Estructura molecular, Traitement surface, Surface treatment, Tratamiento superficie, Zinc Complexe, Zinc Complexes, Zinc Complejo, and Benzène

The electron paramagnetic resonance (EPR) spectra of γ-irradiated single crystals of M(NH3)2Ni(CN)4.2C6H6 (M=Cd and Zn) are studied at 77 K. On the basis of the analysis of spin Hamiltonian parameters, one of the radicals is identified to be Ni(I) species formed due to the electron trap on the Ni(II) center of the polymeric network. The other radical is proposed to be the electron loss M(III) center. Radicals originating from the guest benzene molecules are not formed.

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Propriétés mécaniques et acoustiques; adhérence, Mechanical and acoustical properties; adhesion, Interfaces solide-fluide, Solid-fluid interfaces, Chimie plasma, Plasma chemistry, Química plasma, Cinétique, Kinetics, Cinética, Composé minéral, Inorganic compound, Compuesto inorgánico, Croissance cristalline, Crystal growth, Crecimiento cristalino, Etude expérimentale, Experimental study, Estudio experimental, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Gravure sélective, Selective etching, Grabado selectivo, Oxyde, Oxides, Óxido, Rapport mélange, Mixing ratio, Relación mezcla, Silicium IV Oxyde, Silicon IV Oxides, Silicio IV Óxido, Traitement surface, Surface treatment, Tratamiento superficie, Verre, Glass, Vidrio, and Système oxygène phosphore silicium

Experiments on reactive ion etching of plasma enhanced chemical vapor deposition (PECVD) phosphorus-doped oxide (phosphosilicate glass-PSG) and thermal oxide films have revealed significant differences which allow highly selective etching of PSG over SiO2. Samples were etched in a diode reactor with a Teflon-covered cathode in a mixture of CF4 and H2, and the proportion of hydrogen was varied over the whole range of 0%-100%. The plasma chemistry is significantly affected as the proportion of hydrogen in the mixture is increased leading to a transition from etching of oxide to deposition of a fluorocarbon film on the oxide surface.