articles+ search results

Optics, Optique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Applications biologiques et médicales, Biological and medical applications, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Interactions des lasers avec les plasmas, Laser-plasma interactions, Ablation par laser, Laser ablation, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Divers, Other topics in nanoscale materials and structures, Application laser, Laser beam applications, Diamant, Diamonds, Domaine temps ns, ns range, Effet photoinduit, Photoinduced effect, Efecto fotoinducido, Etude expérimentale, Experimental study, Irradiation UV, Ultraviolet irradiation, Irradiación UV, Monocristal, Monocrystals, Méthode ablation laser, Laser ablation technique, Nanostructure, Nanostructures, Traitement surface, Surface treatments, 5238M, diamond, laser ablation, nanostructurisation of the surface, and photoinduced processes

Nongraphitising ablation of the surface of a natural diamond single crystal irradiated by nanosecond UV laser pulses is studied experimentally. For laser fluences below the diamond graphitisation threshold, extremely low diamond etching rates (less than 1 nm/1000 pulses) are obtained and the term nanoablation is used just for this process. The dependence of the nanoablation rate on the laser fluence is studied for samples irradiated both in air and in oxygen-free atmosphere. The effect of external heating on the nanoablation rate is analysed and a photochemical mechanism is proposed for describing it.

Optics, Optique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Lasers, Lasers à semiconducteur; diodes laser, Semiconductor lasers; laser diodes, Lasers à isolant dopé et autres lasers à solide, Doped-insulator lasers and other solid state lasers, Lasers pompés par diode, Diode-pumped lasers, Matériaux optiques, Optical materials, Matériaux laser, Laser materials, Application laser, Laser beam applications, Laser Nd, Neodymium lasers, Laser YAG, YAG laser, Laser puissance, High-power lasers, Laser solide, Solid state lasers, Matériau laser, Laser materials, Matériau optique, Optical materials, Métallisation, Metallizing, Pompage par diode, Diode pumping, Bombeo por diodo, Traitement par laser, Laser assisted processing, Traitement surface, Surface treatments, 4255P, 4255R, 4255X, 4262C, 4270H, Laser Nd:YAG, high-power laser diode, laser cleaning, modification ofmetal films, and mounting of laser crystals

Metal films of heat-removing elements deposited by magnetron sputtering are modified by radiation from a diode-pumped pulsed solid-state Nd : YAG laser to improve the output parameters of high-power laser diodes.

Optics, Optique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Applications biologiques et médicales, Biological and medical applications, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Divers, Other topics in nanoscale materials and structures, Application laser, Laser beam applications, Carbone, Carbon, Etude expérimentale, Experimental study, Irradiation laser, Laser irradiation, Irradiación láser, Laser puissance, High-power lasers, Méthode ablation laser, Laser ablation technique, Nanostructure, Nanostructures, Traitement surface, Surface treatments, Verre, Glass, glass carbon, laser ablation, and nanostructures

An experimental technique for obtaining nanostructures in the field of high-power laser radiation at the surface of carbon materials is developed. A specific feature of this technique is the formation of liquid carbon inside the region of laser action in the sample exposed to radiation in air at a pressure of ∼ 1 atm. Several types of nanostructures (quasi-domains and nanopeaks) are detected in the laser cavern and beyond the range of laser action. Mechanisms of formation of such structures are proposed. The formation of quasi-domains is related to crystallisation of the melt. The nanopeak groups are formed outside the laser action region during the deposition of hot vapours of the material escaping from this region. The dependences of the variation in morphological properties of the nanostructures on the duration of laser action and the radii of typical cavern zones on the laser radiation power are obtained.

Optics, Optique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Interactions des lasers avec les plasmas, Laser-plasma interactions, Accélération des électrons et des ions dans les plasmas créés par un laser, Laser-plasma acceleration of electrons and ions, Ablation par laser, Laser ablation, Accélération plasma, Plasma acceleration, Cible laser, Laser targets, Cible solide, Solid target, Blanco sólido, Dispositif expérimental, Experimental device, Dispositivo experimental, Domaine temps fs, fs range, Etude expérimentale, Experimental study, Impulsion laser, Laser pulse, Impulsión láser, Impulsion ultracourte, Ultrashort pulse, Impulsión ultracorto, Interaction lumière matière, Light matter interaction, Interacción luz materia, Ionisation, Ionization, Laser pulsé, Pulsed lasers, Méthode temps vol, Time-of-flight method, Nettoyage surface, Surface cleaning, Plasma produit par laser, Laser-produced plasma, Traitement surface, Surface treatments, femtosecond laser radiation, hot plasma, interaction of radiation with matter, and ion acceleration

The impurity layer on the surface of a solid target is shown to exert a significant effect on the characteristics of the ion current of the laser plasma produced under the action of ultrahigh-intensity femtosecond radiation on the surface of this target. The application of pulsed laser cleaning gives rise to an additional high-energy component in the ion spectrum of the target material. It is shown that the ion current parameters of the laser plasma such as the average and highest ion charge, the highest ion energy of the target material, etc., can be controlled by varying the lead time of the cleaning laser radiation.

Mechanics acoustics, Mécanique et acoustique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Mouillage, Wetting, Electrofilage, Electrospinning, Electrohilado, Hydrophobicité, Hydrophobicity, Hidrofobicidad, Matériau poreux, Porous materials, Microstructure, Modélisation, Modelling, Mouillage, Wetting, Nanofibre, Nanofiber, Nanofibra, Pression critique, Critical pressure, Revêtement, Coatings, Simulation numérique, Digital simulation, Traitement surface, Surface treatments, and 6808B

Optics, Optique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Applications biologiques et médicales, Biological and medical applications, Applications industrielles, Industrial applications, Domaine temps ns, ns range, Etude expérimentale, Experimental study, Etude théorique, Theoretical study, Fusion, Melting, Laser pulsé, Pulsed lasers, Perçage laser, Laser drilling, Traitement matériau, Material processing, Tratamiento material, Traitement par laser, Laser assisted processing, Traitement surface, and Surface treatments

The process of melt formation upon irradiation of a metal by a train of nanosecond laser pulses is studied theoretically and experimentally. A method is developed for determining the parameters of a train at which the amount of melt is minimal, and the material is removed in the vapour state upon laser irradiation.

Optics, Optique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Applications biologiques et médicales, Biological and medical applications, Applications industrielles, Industrial applications, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Application laser, Laser beam applications, Couche mince, Thin films, Diffusion thermique, Thermal diffusion, Etude expérimentale, Experimental study, Laser excimère, Excimer lasers, Laser gaz, Gas lasers, Laser pulsé, Pulsed lasers, Métal, Metals, Traitement matériau par laser, Laser materials processing, Traitement surface, Surface treatments, Xénon fluorure, and Xenon fluorides

The influence of the geometry of four beams of coherent XeCl laser radiation on the modification of thin films is studied. It is demonstrated that two-dimensional structures with parameters varying in space can be created by changing the orientation of the bisectrix of the angle between the laser beams with respect to the sample. The conditions necessary for the creation of perfect two-dimensional submicron structures on thin metal films are determined. The ratio of the size of the modified (distant) region to the period of the structure for typical experimental conditions was ∼ 0.25. Submicron features of the modified area are shown to be highly sensitive to the duration and energy of laser pulses.

Optics, Optique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Applications biologiques et médicales, Biological and medical applications, Applications industrielles, Industrial applications, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitement des matériaux et son effet sur la microstructure et les propriétés, Treatment of materials and its effects on microstructure and properties, Ecrouissage, durcissement par déformation; recuit, trempe, revenu, restauration et recristallisation; textures, Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Transformation de matériaux métalliques, Production techniques, Traitements de surface, Surface treatment, Autres traitements de surface, Other surface treatments, Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization, Acier non allié, Carbon steels, Application laser, Laser beam applications, Austénite, Austenite, Carbone, Carbon, Diffusion(transport), Diffusion, Durcissement, Hardening, Etude théorique, Theoretical study, Modélisation, Modelling, Simulation numérique, Digital simulation, Traitement matériau par laser, Laser materials processing, Traitement surface, and Surface treatments

Optics, Optique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Propriétés de transport (non électroniques), Transport properties of condensed matter (nonelectronic), Conduction thermique non électronique et propagation des impulsions de chaleur dans les solides; ondes thermiques, Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Absorption rayonnement, Radiation absorption, Absorción radiación, Champ température, Temperature distribution, Chauffage laser, Laser-radiation heating, Equation Navier Stokes, Navier-Stokes equations, Etude théorique, Theoretical study, Fusion laser, Laser fusion, Fusion surface, Surface melting, Fusión superficie, Gradient température, Temperature gradients, Microscopie électronique balayage, Scanning electron microscopy, Microstructure, Simulation numérique, Digital simulation, Structure périodique, Periodic structures, Titane, Titanium, Traitement par laser, Laser assisted processing, Traitement surface, Surface treatments, Transition phase, Phase transitions, and Transición fase

The initial stage of three-dimensional periodic structures developing during the laser melting of solids is numerically simulated. The temperature nonuniformity caused by reflectivity variations along a capillary wave leads to a self-consistent melt displacement under the action of the temperature gradient due to the temperature dependence of the surface tension coefficient. Based on the numerical solution of the simplified Navier-Stokes equation, the transformation of the initial sinusoidal perturbation of the melt surface is investigated at the stages of self-consistent laser heating and the subsequent cooling. The derived surface shape well agrees with experimental data.

Optics, Optique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Surface cleaning, etching, patterning, Autoorganisation, Self organization, Autoorganización, Défaut, Defects, Etude expérimentale, Experimental study, Etude théorique, Theoretical study, Gravure, Etching, Lacune, Vacancies, Microporosité, Microporosity, Microporosidad, Métal, Metals, Semiconducteur, Semiconductor materials, Traitement matériau, Material processing, Tratamiento material, Traitement surface, and Surface treatments

The defect-deformation (DD) mechanism of spontaneous formation of ensembles of seed pores during etching of semiconductors and metals is developed. The mechanism is based on the concept of generation and DD self-organisation of interstices and vacancies during etching. For p-Si, good agreement between theoretical and experimental results is obtained. In particular, a quasi-hexagonal order in the arrangement of micropores on the surface is revealed, which was predicted by the DD model, and a control of the properties of the ensemble by means of external forces is demonstrated.

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Transformation de matériaux métalliques, Production techniques, Surface treatment, Dépôt de matériaux non métalliques, Nonmetallic coatings, Acier austénitique, Austenitic steels, Acier inoxydable, Stainless steels, Décharge luminescente, Glow discharges, Nitruration, Nitridation, Traitement surface, Surface treatments, and AISI 304

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Analyse chimique structurale, Structural chemical analysis, Désorption stimulée photon, Photon stimulated desorption, Etude expérimentale, Experimental study, Faisceau moléculaire, Molecular beams, Gravure, Etching, Matériau semiconducteur, Semiconductor materials, Mécanisme réaction, Reaction mechanism, Mecanismo reacción, Rayon X mou, Soft X radiation, Silicium, Silicon, Spectrométrie photoélectron, Photoelectron spectroscopy, Traitement surface, Surface treatments, Ultravide, Ultrahigh vacuum, and Si

Si(111)-7×7 is exposed to XeF2 in ultrahigh vacuum and examined with soft-x-ray photoelectron spectroscopy (SXPS) and photon-stimulated desorption (PSD). The exposures encompass the entire range from chemisorption to steady-state etching. By taking into account the different surface sensitivities of SXPS and PSD, the microscopic structure of the surface fluorosilyl reaction layer is obtained as a function of exposure, and the reaction process is modeled. It is found that the reaction-layer structure passes through four distinct exposure regimes. Steric hindrance between the F atoms of neighboring fluorosilyl groups and defects in the substrate are responsible for the evolution of the reaction-layer structure.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Lithography, masks and pattern transfer, Composé minéral, Inorganic compounds, Non métal, Nonmetals, Chimie plasma, Plasma chemistry, Química plasma, Cinétique, Kinetics, Etude expérimentale, Experimental study, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Gravure sélective, Selective etching, Grabado selectivo, Matériau semiconducteur, Semiconductor materials, Mécanisme réaction, Reaction mechanism, Mecanismo reacción, Silicium oxyde, Silicon oxides, Silicium, Silicon, Traitement surface, Surface treatments, O Si, Si, and SiO2

Water vapor added to NF3 plasma during reactive ion etching controls the ratio of the etch rates of SiO2 and Si. Selectivity rises from a value of 0. 14 at water-free 100% NF3 to 1.99 for an initial gas composition of 35% H2O-65% NF3. The results of mass and energy analysis of the plasma yield a basis for discussing the mechanisms which effect the selectivity. The NF3/H2O plasma removes native oxides from Si surfaces.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Transport électronique dans des structures à interface, Electronic transport in interface structures, Résistance de contact, potentiel de contact, Contact resistance, contact potential, Effet tunnel, Tunneling, Contacts métal-non métal, Metal-nonmetal contacts, Composé minéral, Inorganic compounds, Métal transition, Transition elements, Caractéristique courant tension, IV characteristic, Composé binaire, Binary compounds, Composé ternaire, Ternary compounds, Conductivité électrique, Electric conductivity, Contact électrique, Electric contacts, Densité porteur charge, Carrier density, Dépendance température, Temperature dependence, Effet tunnel, Tunnel effect, Etude expérimentale, Experimental study, Faisceau ion, Ion beams, Gallium arséniure, Gallium arsenides, Indium arséniure, Indium arsenides, Matériau dopé, Doped materials, Matériau semiconducteur, Semiconductor materials, Or, Gold, Platine, Platinum, Recuit, Annealing, Titane, Titanium, Traitement surface, Surface treatments, As Ga In, As In, Au, InAs, InGaAs, Pt, and Ti

Extremely low resistance nonalloyed Ti/Pt/Au contacts have been formed to n-InGaAs, p-InGaAs, and n-InAs/InGaAs layers with doping concentrations ranging from I to 5×10-9 cm-3 for n-type and from 2 to 1×1020 cm-3 for p-type material. The comparative studies reveal specific contact resistances as low as 1.7×10-8 Ω cm2 for the n-InAs/InGaAs system, while the best values obtained for n-InGaAs and p-InGaAs are 4.3 and 4.8×10-8 Ω cm2, respectively.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés et matériaux diélectriques, piézoélectriques et ferroélectriques, Dielectrics, piezoelectrics, and ferroelectrics and their properties, Propriétés diélectriques des solides et des liquides, Dielectric properties of solids and liquids, Polarisation et dépolarisation, Polarization and depolarization, Composé minéral, Inorganic compounds, Courant décharge, Discharge current, Corriente descarga, Courant thermostimulé, Thermally stimulated currents, Densité charge, Charge density, Décharge couronne, Corona discharges, Dépendance température, Temperature dependence, Electret, Electrets, Energie activation, Activation energy, Etude expérimentale, Experimental study, Faisceau électron, Electron beams, Piégeage, Trapping, Silicium oxyde, Silicon oxides, Traitement surface, Surface treatments, Vieillissement, Aging, O Si, and SiO2

The transport mechanism of detrapped charges was investigated in thermally wet grown SiO2 electrets, which were first charged by the corona method or by electron-beam irradiation and then aged at different temperatures. The discharge and retrapping behavior was analyzed with a recently suggested method for determination of the charge centroid and charge density and by measuring open-circuit termally stimulated discharge current spectra. Thus, the thermal activation process could be compared with the local redistribution and the decay of the trapped charges. It was found that the fast retrapping effect plays the dominant role for the released negative charge carriers. For positive charge carriers, however, this could not be confirmed.

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Composition; défauts et impuretés, Composition; defects and impurities, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Composé minéral, Inorganic compounds, Attaque chimique, Chemical etching, Ataque químico, Composition chimique, Chemical composition, Composé binaire, Binary compounds, Effet physique rayonnement, Physical radiation effects, Etude expérimentale, Experimental study, Gallium arséniure, Gallium arsenides, Matériau semiconducteur, Semiconductor materials, Méthode temps vol, Time-of-flight method, Oxydation, Oxidation, Ozone, Passivation, Profil profondeur, Depth profiles, Rayonnement UV, Ultraviolet radiation, SIMS, Traitement surface, Surface treatments, As Ga, and GaAs

Electronics, Electronique, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Métrologie, mesures et techniques de laboratoire, Metrology, measurements and laboratory procedures, Techniques de laboratoire, Laboratory procedures, Méthodes ultrarapides (microseconde à femtoseconde), High-speed techniques (microsecond to femtosecond), Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Techniques, appareillages et instruments thermiques, Thermal instruments, apparatus and techniques, Thermométrie, Thermometry, Chauffe, Heating, Etalonnage, Calibration, Impulsion laser, Laser pulse, Impulsión láser, Mesure température, Temperature measurement, Nanoseconde, Nanosecond, Nanosegundo, Résistance couche métallique, Metal film resistor, Resistor película metálica, Thermomètre, Thermometers, Traitement surface, and Surface treatments

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Composé minéral, Inorganic compounds, Composé ternaire, Ternary compounds, Distance interréticulaire, Interplanar spacing, Distancia interreticular, Etude expérimentale, Experimental study, RHEED, Rayon X, X radiation, Spectrométrie photoélectron, Photoelectron spectroscopy, Strontium titanate, Strontium titanates, Structure surface, Surface structure, Traitement surface, Surface treatments, Traitement thermique, Heat treatments, O Sr Ti, SrTiO3, Terminaison surface, and Surface termination

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Etats électroniques de surface et d'interface, Surface and interface electron states, Etats de surface, structure de bande, densité d'états électroniques, Surface states, band structure, electron density of states, Addition sélénium, Selenium additions, Etat surface, Surface states, Etude expérimentale, Experimental study, Gallium arséniure, Gallium arsenides, Lacune, Vacancies, Niveau coeur, Core levels, Rayonnement UV, Ultraviolet radiation, Spectre photoélectron, Photoelectron spectrum, Espectro fotoelectrones, Traitement surface, Surface treatments, As Ga:Se, and GaAs:Se

Angle-resolved core-level photoelectron spectroscopy using a monochromatized synchrotron radiation source was used to study the structure of the Se-treated GaAs(001) surface. Depth profiling was achieved by varying the photoelectron angle with respect to the sample surface. The Se 3d spectrum was found to consist of two components. The higher-kinetic-energy component is assigned as the surface-sensitive component, which is opposite to the conventional assignment based on Ga coordination.

Metallurgy, welding, Métallurgie, soudage, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Diffraction et diffusion de rayons x, X-ray diffraction and scattering, Diffraction sur monocristal et sur poudre, Single-crystal and powder diffraction, Structure de solides cristallins particuliers, Structure of specific crystalline solids, Solides élémentaires, Elemental solids, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Métal transition, Transition elements, Contrainte, Stresses, Dépendance température, Temperature dependence, Etude expérimentale, Experimental study, Phase bêta, Beta phase, Fase beta, Beta Phase, Pulvérisation cathodique, Cathode sputtering, Stabilisation, Stabilization, Structure cristalline, Crystal structure, Substrat, Substrates, Tantale, Tantalum, Traitement surface, Surface treatments, XRD, and Ta