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Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Mouillage, Wetting, Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Divers, Other topics in nanoscale materials and structures, Chimie, Chemistry, Chimie generale et chimie physique, General and physical chemistry, Théorie des réactions, cinétique générale. Catalyse. Nomenclature, documentation chimique, informatique chimique, Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry, Catalyse, Catalysis, Catalyseurs: préparations et propriétés, Catalysts: preparations and properties, Aire superficielle, Surface area, Area superficial, Aire sélective, Selective area, Anatase, Anatasa, Angle contact, Contact angle, Angulo contacto, Autoassemblage, Self assembly, Autoensamble, Catalyseur, Catalyst, Catalizador, Composé hydrophobe, Hydrophobic compound, Compuesto hidrofobo, Couche autoassemblée, Self-assembled layer, Capa autoensamblada, Croissance cristalline en solution, Crystal growth from solutions, Effet photoinduit, Photoinduced effect, Efecto fotoinducido, Effet rayonnement, Radiation effect, Efecto radiación, Mouillabilité, Wettability, Remojabilidad, Nanostructure, Nanoestructura, Photocatalyse, Photocatalysis, Fotocatálisis, Rugosité, Roughness, Rugosidad, Synthèse hydrothermale, Hydrothermal synthesis, Titane, Titanium, Titanio, Traitement surface, Surface treatment, Tratamiento superficie, 6808B, 6855J, 8110D, Photocatalyst, Self-assembled monolaye, Superhydrophobic-superhydrophilic pattern, and Titanium dioxide

Rough nanostructured anatase TiO2 surfaces containing many pores were prepared by the hydrothermal-based method. Surface modification with self-assembled monolayers (SAMs) of octadecylphosphonic acid (ODP) resulted in the superhydrophobic surface with an extremely high static water contact angle (CA) of 173.6° ± 1.7°. This superhydrophobic surface could be converted into a superhydrophilic surface with a water CA of nearly 0° by irradiating it with ultraviolet (UV) light, which induced photocatalytic decomposition of the ODP SAM. A superhydrophobic-superhydrophilic pattern with an extremely high wettability contrast (a water CA difference of over 170°) could be fabricated on the ODP-modified TiO2 surface by area-selective UV irradiation through a photomask. This is the report of the TiO2-based superhydrophobic-superhydrophilic pattern with a water CA difference of over 170°, and it may be possible to use such patterns for various applications.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Chimie, Chemistry, Chimie generale et chimie physique, General and physical chemistry, Théorie des réactions, cinétique générale. Catalyse. Nomenclature, documentation chimique, informatique chimique, Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry, Catalyse, Catalysis, Catalyseurs: préparations et propriétés, Catalysts: preparations and properties, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Angle contact, Contact angle, Angulo contacto, Attaque chimique, Chemical etching, Ataque químico, Catalyseur, Catalyst, Catalizador, Cinétique réaction, Reaction kinetics, Couche mince, Thin film, Capa fina, Diode électroluminescente, Light emitting diode, Diodo electroluminescente, Dissolution, Disolución, Dépendance du temps, Time dependence, Dependencia del tiempo, Effet concentration, Concentration effect, Efecto concentración, Electrolyte, Electrólito, Gravure, Engraving, Grabado, Indium, Indio, Microbalance quartz, Quartz microbalance, Microbalanza cuarzo, Microscopie force atomique, Atomic force microscopy, Microscopía fuerza atómica, Modèle cinétique, Kinetic model, Modelo cinético, Oxyde d'indium, Indium oxide, Indio óxido, Oxyde d'étain, Tin oxide, Estaño óxido, Porosité, Porosity, Porosidad, Réaction chimique, Chemical reaction, Reacción química, Spectre photoélectron RX, X-ray photoelectron spectra, Traitement chimique, Chemical treatment, Tratamiento químico, Traitement surface, Surface treatment, Tratamiento superficie, pH, 6855J, 8560D, 8560J, Etching, Indium tin oxide, Quartz crystal microbalance, and X-ray photoelectron spectroscopy

We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Mouillage, Wetting, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Nanotubes, Divers, Other topics in nanoscale materials and structures, Chimie, Chemistry, Chimie generale et chimie physique, General and physical chemistry, Théorie des réactions, cinétique générale. Catalyse. Nomenclature, documentation chimique, informatique chimique, Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry, Catalyse, Catalysis, Catalyseurs: préparations et propriétés, Catalysts: preparations and properties, Addition fluor, Fluorine addition, Adición fluor, Addition étain, Tin addition, Adición estaño, Angle contact, Contact angle, Angulo contacto, Catalyseur, Catalyst, Catalizador, Couche mince, Thin film, Capa fina, Croissance cristalline en solution, Crystal growth from solutions, Diffraction RX, X ray diffraction, Difracción RX, Emission champ, Field emission, Emisión campo, Face cristalline, Crystal face, Cara cristal, Germe cristallin, Crystal seed, Germen cristalino, Microscopie RX, X ray microscopy, Microscopía rayos X, Microscopie électronique balayage, Scanning electron microscopy, Microscopía electrónica barrido, Morphologie cristalline, Crystal morphology, Morfología cristalina, Morphologie surface, Surface morphology, Mouillabilité, Wettability, Remojabilidad, Nanobâtonnet, Nanorod, Nanopalito, Nanomatériau, Nanostructured materials, Nanostructure, Nanoestructura, Oxyde de titane, Titanium oxide, Titanio óxido, Protection environnement, Environmental protection, Protección medio ambiente, Réaction dirigée, Template reaction, Reacción dirigida, Réseau (arrangement), Array, Red, Structure cristalline, Crystalline structure, Estructura cristalina, Structure surface, Surface structure, Estructura superficie, Synthèse hydrothermale, Hydrothermal synthesis, Traitement surface, Surface treatment, Tratamiento superficie, 6808B, 8107D, 8110D, Substrat verre, TiO2, Hydrophobicity, Hydrothermal deposition, Nanorods, Titanium dioxide, and Triethoxyoctylsilane

Nanostructured TiO2 arrays were prepared through a facile and environmentally friendly hydrothermal method on fluorine-doped tin oxide coated glass substrates with tunable surface morphologies without using any catalysts, seeds or templates. Their crystal structure, surface morphology, compositions and wettability were investigated by X-ray diffraction, field emission scanning electron microscope, X-ray photoelectron spectroscope and contact angle measurements, respectively. It is found that the concentration of hydrochloric acid has a great influence on the morphology and wettability of TiO2 nanorod films. Typically, the film prepared with 7.0 M HCl exhibits a high water contact angle of 157.3 ± 1.5° with an advancing contact angle of 154.2 ± 1.3° and a receding contact angle of 161.2 ± 1.3° and a small sliding angle of 7° after hydrophobic treatment. The Cassie theory was used to analyze the hydrophobic phenomenon of the as-prepared film, and it reveals that only about 9% of the water surface is contacted with the TiO2 film and the remaining 91% is contacted with the air cushion, which is reasonable for the hydrophobicity of a TiO2 nanorod film.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Argent, Silver, Plata, Couche active, Active layer, Capa activa, Grosseur grain, Grain size, Grosor grano, Impression à jet d'encre, Ink jet printing, Impresión por chorro de tinta, Morphologie, Morphology, Morfología, Pentacène, Pentacene, Pentaceno, Piégeage, Trapping, Captura, Résistivité couche, Sheet resistivity, Resistividad capa, Semiconducteur organique, Organic semiconductors, Traitement surface, Surface treatment, Tratamiento superficie, Transistor effet champ, Field effect transistor, Transistor efecto campo, 6855J, 8530P, 8530T, Oxyde de graphène, Graphene oxide, Substrat SiO2, Substrat silicium, Inkjet printing, Organic field effect transistor triisopropylsilylethynyl (TIPS) pentacene, and Reduced graphene oxide

We report a performance enhancement of triisopropylsilylethynyl (TIPS) pentacene organic field effect transistors (OFETs) obtained by treating the surface of SiO2/Si substrate with dispersible reduced graphene oxide (rGO). The source and drain electrodes were patterned with inkjet-printed highly conductive silver. The sheet resistance of inkjet-patterned silver electrodes has found to be ∼1 Ω/□, which is comparable to that of typical vacuum-evaporated silver electrodes. The electrical performance has improved by rGO treatment, with a morphology improved for the active TIPS pentacene layer. The rGO treatment increased the morphological grain size of TIPS pentacene, resulting in a decreased number of interfacial trapping sites in the carrier transport paths. The field effect mobility of the TIPS pentacene OFETs, following the rGO surface treatment, was improved from 0.082 cm2/V·s to 0.141 cm2/V·s.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Photoluminescence, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Absorption optique, Optical absorption, Absorción óptica, Cellule solaire, Solar cell, Célula solar, Chlorure de cadmium, Cadmium chloride, Cadmio cloruro, Couche mince, Thin film, Capa fina, Cristallinité, Crystallinity, Cristalinidad, Croissance grain, Grain growth, Crecimiento grano, Diffusion(transport), Diffusion, Déconvolution, Deconvolution, Desconvolución, Défaut cristallin, Crystal defect, Defecto cristalino, Effet température, Temperature effect, Efecto temperatura, Joint grain, Grain boundary, Limite grano, Microscopie électronique balayage, Scanning electron microscopy, Microscopía electrónica barrido, Photoluminescence, Fotoluminiscencia, Piqûre corrosion, Pinhole, Picadura corrosión, Recuit thermique, Thermal annealing, Recocido térmico, Semiconducteur II-VI, II-VI semiconductors, Soufre, Sulfur, Azufre, Spectre absorption, Absorption spectrum, Espectro de absorción, Sulfure de cadmium, Cadmium sulfide, Cadmio sulfuro, Tellurure de cadmium, Cadmium tellurides, Température recuit, Annealing temperature, Temperatura recocido, Traitement chimique, Chemical treatment, Tratamiento químico, Traitement surface, Surface treatment, Tratamiento superficie, 6855J, 8105D, 8460J, CdS, CdTe, S, Substrat CdTe, Annealing, Cadmium telluride, Solar cells, and Thin films

High-temperature annealing (HTA), a process step prior to vapor cadmium chloride (VCC) treatment, has been found to be useful for improving the crystallinity of CdTe films and the efficiency of ultra-thin CdTe solar cells. Scanning electron microscopy, optical absorption, photoluminescence measurements and analyses on photoluminescence results using spectral deconvolution reveal that the additional HTA step produces substantial grain growth and reduces grain boundary defects. It also reduces excessive sulfur diffusion across the junction that can occur during the VCC treatment. The HTA step helps to produce pinhole-free CdTe films and reduce electrical shorts in ultra-thin CdTe solar cells. An efficiency of about 11.6% has been demonstrated for ultra-thin CdS/CdTe solar cells processed with HTA step.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Décharges électriques, Electric discharges, Méthodes utilisant des décharges pour sources spectrales (incluant les plasmas couplés inductivement), Discharges for spectral sources (including inductively coupled plasmas), Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de nanofabrication, Methods of nanofabrication, Formation de nanomotifs, Nanoscale pattern formation, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Addition fluor, Fluorine addition, Adición fluor, Addition étain, Tin addition, Adición estaño, Caractéristique courant tension, Voltage current curve, Característica corriente tensión, Cellule solaire, Solar cell, Célula solar, Colorant organique, Organic dye, Colorante orgánico, Courant photoélectrique, Photoelectric current, Corriente fotoeléctrica, Facteur transmission, Transmittance, Factor transmisión, Formation motif, Patterning, Formacíon motivo, Gravure, Engraving, Grabado, Lithographie, Lithography, Litografía, Microscopie électronique balayage, Scanning electron microscopy, Microscopía electrónica barrido, Oxyde de titane, Titanium oxide, Titanio óxido, Photoconductivité, Photoconductivity, Fotoconductividad, Plasma couplé inductivement, Inductively coupled plasma, Résistivité couche, Sheet resistivity, Resistividad capa, Tension polarisation, Bias voltage, Voltage polarización, Traitement surface, Surface treatment, Tratamiento superficie, 5280Y, 6855J, 8116R, 8460J, TiO2, Dye-sensitized solar cell, Etching, Fluorine-doped tin oxide, and Transparent conducting oxide

The surface modification of fluorine-doped tin oxide (FTO) transparent electrodes was carried out by lithography and inductively coupled plasma etching to improve the conversion efficiency of dye-sensitized solar cells (DSSCs). The concentration of Cl2 gas and dc-bias voltage to the substrate were varied as the main etch parameters. The transmittance and sheet resistance of the FTO electrodes were compared before and after etching. The DSSCs fabricated on the patterned FTO electrodes showed higher conversion efficiency than those fabricated on the ordinary FTO electrodes without patterns. Scanning electron microscopy showed that more TiO2 particles could be involved in the DSSCs with patterned FTO electrodes, and that the contact between the TiO2 layer and electrode were improved by patterning the FTO electrode. The current-voltage curves and incident photon to current efficiency spectra showed that a significantly higher photocurrent was produced in the DSSCs fabricated on the patterned FTO.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Techniques et équipements généraux, General equipment and techniques, Capteurs (chimiques, optiques, électriques, de mouvement, de gaz, etc.); télédétection, Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing, Chimie, Chemistry, Chimie generale et chimie physique, General and physical chemistry, Théorie des réactions, cinétique générale. Catalyse. Nomenclature, documentation chimique, informatique chimique, Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry, Catalyse, Catalysis, Catalyseurs: préparations et propriétés, Catalysts: preparations and properties, Physicochimie de surface, Surface physical chemistry, Généralités, appareillage, General, apparatus, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Addition manganèse, Manganese addition, Adición manganeso, Addition niobium, Niobium addition, Adición niobio, Anatase, Anatasa, Capteur mesure, Measurement sensor, Captador medida, Caractéristique capacité tension, Voltage capacity curve, Característica capacidad tensión, Catalyseur, Catalyst, Catalizador, Cellule solaire, Solar cell, Célula solar, Chrome, Chromium, Cromo, Circuit intégré, Integrated circuit, Circuito integrado, Colorant organique, Organic dye, Colorante orgánico, Composition chimique, Chemical composition, Composición química, Cristallinité, Crystallinity, Cristalinidad, Croissance cristalline en phase vapeur, Crystal growth from vapors, Densité porteur charge, Charge carrier density, Concentración portador carga, Diode barrière Schottky, Schottky barrier diode, Diodo barrera Schottky, Dopage semiconducteur, Semiconductor doping, Interface, Interfase, Mesure tension électrique, Voltage measurement, Méthode couche atomique, Atomic layer method, Método capa atómica, Méthode mesure, Measurement method, Método medida, Métrologie, Metrology, Metrología, Oxyde de titane, Titanium oxide, Titanio óxido, Photocatalyse, Photocatalysis, Fotocatálisis, Polycristal, Polycrystal, Policristal, Porteur libre, Free carrier, Portador libre, Semiconducteur, Semiconductor materials, Semiconductor(material), Silicium, Silicon, Silicio, Titane, Titanium, Titanio, Traitement surface, Surface treatment, Tratamiento superficie, 0707D, 8115K, 8460J, Si, TiO2, Atomic layer deposition, Capacitance-voltage, Carrier concentration, and Metal oxide semiconductor

In direct contrast to the way in which silicon is precisely doped for integrated circuit applications in order to optimize device performance, there is little nuanced understanding of the correlation between TiO2 doping level, charge carrier concentration, and the operation of TiO2-based photocatalysts, dye-sensitized solar cells, and sensors. The present work outlines a rigorous methodology for the determination of free carrier concentration for doped metal oxide semiconductors such as TiO2 that are not amenable to standard metrology methods. Undoped, Cr-, Mn-, and Nb-doped polycrystalline anatase TiO2 are synthesized via atomic layer deposition (ALD) using Ti(OCH(CH3)2)4, H20, Cr(C5H7O2)3, Mn(DPM)3 (DPM = 2,2,6,6-tetramethyl-3, 5-heptanedionato), and Nb(OCH2CH3)5 as the source materials forTi, 0, Cr, Mn, and Nb, respectively. Chemical composition and crystallinity are investigated and a thorough device-like characterization ofTi02 Schottky diodes is carried out to justify the subsequent extraction of carrier concentration values from capacitance-voltage (C-V) measurements using the Mott-Schottky approach. The influence of factors such as substrate type, contact metal type, and surface and interface preparation are examined. Measurements of donor carrier concentration are obtained for undoped, Cr-, Mn-, and Nb-doped TiO2 synthesized by ALD. Possible causes for the obtained carrier concentrations are discussed.