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Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Sciences appliquees, Applied sciences, Electronique, Electronics, Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Alcool, Alcohols, Alumine, Alumina, Boehmite, Boehmita, Capacité électrique, Capacitance, Condensateur, Capacitors, Couche barrière, Barrier layer, Couche mince, Thin films, Cristallisation, Crystallization, Diffraction RX, XRD, Ethane-«1,2»-diol, Ethylene glycol, Mesure capacité électrique, Capacitance measurement, Morphologie surface, Surface morphology, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Propriété diélectrique, Dielectric properties, Traitement surface, Surface treatments, 6855A, 6855J, 8115A, 8432T, Al2O3, Substrat Aluminium, Anodic alumina, Dielectric, and Surface treatment

Hydrous films were grown on high purity and cubicity Al foils for electrolytic capacitors in deionized water, ethylene glycol-deionized water and glycerol-deionized water at different immersion times. According to X-ray diffraction patterns the hydration treatment allowed growing a pseudo boehmite layer on Al surface whose morphology is appreciably affected by the bath composition. Capacitance measurements and photoelectrochemical findings suggest that a more compact barrier layer forms during the immersion in alcohol containing solutions. The hydration in water allowed saving energy and preparing more blocking oxide films. The beneficial effect of hydration in hot water on the specific capacitance was evidenced only for films formed at 300 V due to the crystallization of amorphous alumina in γ'-Al2O3.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Abrasion, Agent surface non ionique, Nonionic surfactants, Complexe de cuivre, Copper complexes, Composé du cuivre, Copper compounds, Couche barrière, Barrier layer, Couche mince, Thin films, Cuivre, Copper, Dissolution, Effet concentration, Quantity ratio, Matériau poreux, Porous materials, Polissage chimique, Chemical polishing, Polissage mécanochimique, Chemical mechanical polishing, Ruthénium, Ruthenium, Synergie, Synergism, Sélectivité, Selectivity, Selectividad, Traitement surface, Surface treatments, Vitesse gravure, Etching rate, Velocidad grabado, Substrat cuivre, Benzotriazole, Copper chemical mechanical polishing, Non-ionic surfactant, and Potassium periodate

Ruthenium will be integrated into copper interconnects as a barrier layer in the near future. During the chemical mechanical polishing process of the ruthenium barrier layer, copper polishing performance with barrier slurries is crucial to microchips' final performance. This paper mainly studies the synergetic effect of benzotriazole (BTA) and non-ionic surfactant on copper polishing performance using KIO4-based barrier slurries. The results show that, the copper removal rate (RR) and static etching rate increase with increasing concentration of KIO4 due to the increasing proportion of the Cu-periodate and Cu-iodate compounds like Cu(IO4)2 and Cu(IO3)2 of the passivating film on the copper surface; the added BTA can further enhance the copper RR instead of suppressing it probably due to the formation of incomplete Cu-BTA thin film. It is demonstrated that the combination of BTA and non-ionic surfactant exhibits excellent performance in suppressing the copper RR to about 200 Å/min, realizing satisfactory copper surface quality and achieving desirable material removal rate selectivity among copper, ruthenium and low-κ dielectrics. The synergetic passivation mechanism of BTA and non-ionic surfactant on the copper surface was investigated. It is proposed that in the presence of KIO4 as an oxidizer, the added BTA and non-ionic surfactant can form a porous passivating film on the copper surface which is mainly composed of the Cu―BTA complex, the adsorbed non-ionic surfactant and the leftover insoluble copper compounds like Cu(IO4)2 and Cu(IO3)2, and then the hydrophobic polypropylene oxide segments of non-ionic surfactant can be effectively absorbed on the hydrophobic Cu-BTA complex as a supplement. The above two parts are integrated into a complete passivating film to protect the copper surface from chemical dissolution and excessive mechanical abrasion.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Microscopies électronique, ionique et en champ proche, Electron, ion, and scanning probe microscopy, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Epitaxie en phase liquide; dépôt en phase liquide (phases fondues, solutions et couches superficielles sur des liquides), Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids), Analyse surface, Surface analysis, Anodisation, Anodizing, Application médicale, Medical application, Aplicación medical, Chitosane, Chitosan, Quitosano, Corrosion, Couche mince, Thin films, Couche multimoléculaire, Multilayer, Capa multimolecular, Diffraction RX, XRD, Dépôt immersion, Dip coating, Microscopie électronique balayage, Scanning electron microscopy, Microstructure, Multicouche, Multilayers, Oxydation, Oxidation, Oxyde de titane, Titanium oxide, Titanio óxido, Procédé sol gel, Sol-gel process, Revêtement composite, Composite coating, Revestimiento compuesto, Rugosité, Roughness, Résistance corrosion, Corrosion resistance, Structure surface, Surface structure, Synthèse hydrothermale, Hydrothermal synthesis, Titane, Titanium, Traitement surface, Surface treatments, 6855J, 8115L, Anodization, and Potentiodynamic polarization test

In the present work, we describe the surface modification of commercially pure titanium (CP-Ti) by a composite/ multilayer coating approach for biomedical applications. CP-Ti samples were treated by micro-arc oxidation (MAO) and subsequently some of the samples were coated with chitosan (Chi) by dip coating method, while others were subjected to hydrothermal treatment (HT) followed by chitosan coating. The MAO, MAO/Chi, and MAO/HT/Chi coated Ti were characterized and their characteristics were compared with CP-Ti. X-ray diffraction and scanning electron microscopy were used to assess the structural and morphological characteristics. The average surface roughness was determined using a surface profilometer. The corrosion resistance of untreated and surface modified Ti in commercial saline at 298 K was evaluated by potentiodynamic polarization test. The results indicated that the chitosan coating is very well integrated with the MAO and MAO/HT coating by physically interlocking itself with the coated layer and almost sealed all the pores. The surface roughness of hydrothermally treated and chitosan coated MAO film was superior evidently to that with other sample groups. The corrosion studies demonstrated that the MAO, hydrothermally treated and chitosan coated sample enhanced the corrosion resistance of titanium. The result indicates that fabrication of hydrothermally treated MAO surface coatings with chitosan is a significant approach to protect the titanium from corrosion, hence enhancing the potential use of titanium as bio-implants.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Composition et identification des phases, Composition and phase identification, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Phénomènes de transport électronique dans les couches minces et les structures de basse dimensionnalité, Electronic transport phenomena in thin films and low-dimensional structures, Propriétés électriques de couches minces particulières, Electrical properties of specific thin films, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Depôt par pulvérisation cathodique, Deposition by sputtering, Atome neutre hydrogène, Hydrogen neutral atoms, Bande interdite, Energy gap, Composition phase, Phase composition, Composición fase, Conductivité obscurité, Dark conductivity, Conductivité électrique, Electrical conductivity, Couche mince transparente, Transparent thin film, Película transparente, Couche mince, Thin films, Couche oxyde, Oxide layer, Capa óxido, Dispositif photovoltaïque, Photovoltaic cell, Dispositivo fotovoltaico, Domaine élastique, Elastic analysis, Campo elástico, Dopage, Doping, Dépendance température, Temperature dependence, Dépôt physique phase vapeur, Physical vapor deposition, Dépôt pulvérisation, Sputter deposition, Effet pression, Pressure effects, Energie activation, Activation energy, Matériau composite, Composite materials, Microstructure, Niobium, Propriété transport, Transport properties, Propiedad transporte, Propriété électrique, Electrical properties, Propriété électronique, Electronic properties, Propiedad electrónica, Pulvérisation cathodique, Cathode sputtering, Pulvérisation réactive, Reactive sputtering, RBS, Recuit, Annealing, Revêtement conducteur, Conductive coating, Revestimiento conductor, Spectre photoélectron RX, X-ray photoelectron spectra, Spectrométrie Raman, Raman spectroscopy, Traitement surface, Surface treatments, 6855N, 8115C, Substrat verre, Hot-wire, Hydrogen, Titanium dioxide, and Transparent conducting oxide

Transparent and electrically conductive niobium-doped TiO2 thin films have been deposited on glass surfaces by d.c.-pulsed reactive magnetron sputtering from a composite Ti:Nb target, using oxygen as reactive gas. A rapid 1 min annealing at 500 °C in an atomic hydrogen rich atmosphere, obtained by flowing H2 on a Ta filament resistively heated to 1750 °C in vacuum (hot-wire), proved to be very efficient in enhancing the electrical properties of these ∼100 nm thick TiO2:Nb thin films. Dark conductivity (σd) and its activation energy were measured as a function of (inverse) temperature and the value of σd at room temperature was used to assess the effect of the H2 annealing on the transport properties. A 5-order of magnitude increase in electrical conductivity was observed for optimised treatment conditions at a hydrogen pressure of 10 Pa. A maximum value of σd in the range of ∼1.4 × 103 S/cm was attained for optimised conditions, where a level of ∼6 at.% of H doping was measured close to the film surface. X-ray photoelectron spectroscopy, elastic recoil detection analysis, Rutherford backscattering and Raman spectroscopies were used to access information of composition and film structure for the explanation of the strong enhancement of the film's electrical conductivity and band-gap widening to 3.45 eV following hot-wire treatments. These thin films can be used as transparent conductive oxide contact layers for photovoltaic applications.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Propriétés physiques non électroniques de couches minces, Physical properties of thin films, nonelectronic, Propriétés mécaniques et acoustiques, Mechanical and acoustical properties, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.), Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.), Basse pression, Low pressure, Carbure de silicium, Silicon carbide, Silicio carburo, Contrainte résiduelle, Residual stresses, Couche mince, Thin films, Couche épitaxique, Epitaxial layers, Courbure, Curvature, Cristallinité, Crystallinity, Cristalinidad, Diffraction RX, XRD, Distribution contrainte, Stress distribution, Dépôt chimique phase vapeur, CVD, Effet contrainte, Stress effects, Epitaxie, Epitaxy, Hétéroépitaxie, Heteroepitaxy, Heteroepitaxia, Mesure courbure, Curvature measurement, Microscopie RX, X-ray microscopy, Microscopie force atomique, Atomic force microscopy, Morphologie surface, Surface morphology, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Pastille électronique, Wafers, Rugosité, Roughness, Traitement surface, Surface treatments, 6855A, 6855J, 6860B, 8115G, Substrat SiC, Substrat silicium, Off-axis, On-axis, Stress, Surface steps, Tilting, and X-ray diffraction

The advantages and disadvantages of using off-axis substrates for heteroepitaxial growth of 3C-SiC on Si(111) substrates are investigated in this paper. 3C-SiC is deposited on on-axis and 4° off-axis 150 mm Si(111) substrates using low pressure chemical vapour deposition. The dependence of surface morphology, roughness, crystallinity, alignment between the epilayer and the substrate, and film stress are evaluated using atomic force microscopy, X-ray diffraction, and wafer curvature measurement. Highly parallel steps are observed on both on-axis and off-axis Si substrates after surface preparation, yet step density is doubled and step height is much larger (>21 times of single step height) for 4° off-cut Si compared to on-axis Si. X-ray diffraction results indicate that SiC grown on on-axis Si substrates are well-aligned with the Si substrates, while the SiC grown on off-axis substrates are tilted positively by as large angle as 1.66°. The well-aligned SiC grown on on-axis Si substrate exhibits lower and uniform residual stress compared to the film grown on off-axis Si substrates, which exhibits a nonuniform distribution of higher stress. The stress distribution is found to be dependent on Si surface step direction and height. These misorientation dependent tilting and stress distribution mechanisms are expected to be applicable to other hetero-epitaxial growth systems with similar mismatch magnitude.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Composition et identification des phases, Composition and phase identification, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Depôt par pulvérisation cathodique, Deposition by sputtering, Epitaxie en phase vapeur; croissance en phase vapeur, Vapor phase epitaxy; growth from vapor phase, Bactérie, Bacteria, Couche mince, Thin films, Cuivre, Copper, Diffraction RX, XRD, Distribution ion, Ion distribution, Distribución ión, Dépôt phase vapeur, Vapor deposition, Dépôt physique phase vapeur, Physical vapor deposition, Dépôt pulvérisation, Sputter deposition, Effet pression, Pressure effects, Fonction distribution, Distribution functions, Fonction répartition, Distribution function, Función distribución, Forme cristalline, Crystal form, Forma cristalina, Microstructure, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Ostéoblaste, Osteoblast, Osteoblasto, Procédé dépôt, Deposition process, Procedimiento revestimiento, Pulvérisation cathodique, Cathode sputtering, Résolution temporelle, Time resolution, Spectre photoélectron RX, X-ray photoelectron spectra, Spectre résolution temporelle, Time resolved spectra, Titane, Titanium, Traitement surface, Surface treatments, Transformation phase cristalline, Crystal-phase transformations, Transformation phase, Phase transformations, 6855A, 6855N, 8115C, 8115K, Copper release, High power impulse magnetron sputtering, Ti-Cu films, X-ray Photoelectron Spectroscopy, and X-ray diffraction

Formation of Ti-Cu thin films with regard to controlling the copper release is reported in the paper. Copper released from films can inhibit bacterial colonization and can be utilized as an implant surface modification. The copper release has to be controlled (i) to repress the bacteria growth and (ii) to balance the Cu level tolerated by osteoblasts cells. The dual-high power impulse magnetron sputtering superimposed with mid-frequency discharge was employed for ionized vapor deposition of Ti-Cu films. It was found that the microscopical architecture of films is strongly influenced by the pressure during the deposition process. There is an indication that these structural changes are caused by the energy of deposited species (ion distribution functions were measured by time-resolved retarding field analyzer). Grain-like structure with large Cu crystals is formed at higher pressures, i.e. at low ion energies. The grain-like microstructure increases an effective film area which encourages the copper release. It is demonstrated that controlled copper release can be achieved by appropriate setting of the input experimental parameters (pressure, mean discharge current).

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Etats électroniques de surface et d'interface, Surface and interface electron states, Phénomènes de transport électronique dans les couches minces et les structures de basse dimensionnalité, Electronic transport phenomena in thin films and low-dimensional structures, Propriétés électriques de couches minces particulières, Electrical properties of specific thin films, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Divers, Other topics in nanoscale materials and structures, Autoassemblage, Self-assembly, Bande interdite, Energy gap, Capteur chimique, Chemical sensors, Cellule solaire, Solar cells, Conductivité type p, P type conductivity, Conductividad tipo p, Conductivité électrique, Electrical conductivity, Couche autoassemblée, Self-assembled layers, Couche mince, Thin films, Diffraction RX, XRD, Diode laser, Laser diodes, Effet température, Temperature effects, Fonctionnalisation, Functionalization, Funciónalización, Humidité, Humidity, Laser semiconducteur, Semiconductor lasers, Liaison hydrogène, Hydrogen bonds, Microscopie électronique balayage, Scanning electron microscopy, Nanomatériau, Nanostructured materials, Nanoparticule, Nanoparticles, Nanostructure, Nanostructures, Oxyde de zinc, Zinc oxide, Zinc óxido, Propriété électrique, Electrical properties, Propriété électronique, Electronic properties, Propiedad electrónica, Réseau(arrangement), Arrays, Résonance magnétique nucléaire, Nuclear magnetic resonance, Semiconducteur, Semiconductor materials, Spectre photoélectron UV, Ultraviolet photoelectron spectra, Spectrométrie IR, Infrared spectroscopy, Spectrométrie dispersive, Dispersive spectrometry, Espectrometría dispersiva, Traitement surface, Surface treatments, Travail sortie, Work functions, ZnO, Hydrogen bonding, Phosphonic acid, Solid-state nuclear magnetic resonance, and Surface coverage

Zinc oxide (ZnO) nanoparticles have emerged as a fascinating metal oxide semiconductor nanomaterial due largely to their wide array of properties that can be altered by surface modification. For example electrical and photonic properties include a range of conductivity from metallic to insulating (n-type and p- type conductivity), wide-band gap semiconductivity, room-temperature ferromagnetism, and chemical-sensing. Recently there has been much interest in the electronic and photonic properties of ZnO nanostructures as foreseeable applications include solar cells and laser diodes. For such purposes, controlling the surface functionalization is important and can be tailored by the chemical attachment of organic acids to the surface. The oxide surface readily reacts with organics forming self-assembled alkylphosphonate films. In this study, ZnO nanoparticles were modified using self-assembly thin films with phosphonic functional head groups. The amount of organic acid used in preparation of the thin film was shown to be important to the nanoparticle surface coverage. The modified ZnO nanoparticles were then characterized using infrared spectroscopy, powder X-ray diffraction, solid-state nuclear magnetic resonance, and scanning electron microscopy-energy dispersive X-ray spectroscopy. The interfacial bonding was identified by spectroscopy analysis to be the bidentate and tridentate motifs between the phosphonic head group and the oxide surface. Work function modification was measured using Ultraviolet photoelectron spectroscopy. The influences of temperature, humidity, and solvent rinse on the stability of the surface modifications were performed.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Composition et identification des phases, Composition and phase identification, Structures de basse dimensionnalité (superréseaux, puits quantiques, multicouches): structure et propriétés non électroniques, Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Composition chimique, Chemical composition, Couche barrière, Barrier layer, Faisceau ion, Ion beams, Interface, Interfaces, Microscopie électronique transmission, Transmission electron microscopy, Microscopie électronique, Electron microscopy, Microstructure, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Rugosité, Roughness, Structure lamellaire, Lamellar structure, Estructura lamelar, Taux croissance, Growth rate, Traitement surface, Surface treatments, Trichite, Whiskers, 6855A, 6855J, 6855N, Cu6Sn5, SnAgCu, Substrat cuivre, Intermetallics, and Tin whisker

Intermetallic growth mechanisms and rates are investigated in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. An 8―10 μm thick Sn surface finish layer was electroplated onto a Cu substrate with a 1.5―2 μm thick Ni or Ag barrier layer. In order to induce intermetallic layer growth, the samples were aged in elevated temperatures: 50 °C and 125 °C. Intermetallic layer growth was checked by focused ion beam-scanning ion microscope. The microstructures and chemical compositions of the intermetallic layers were observed with a transmission electron microscope. It has been found that Ni barrier layers can effectively block the development of Cu6Sn5 intermetallics. The intermetallic growth characteristics in the Sn/Cu and Sn/Ni/Cu systems are very similar. The intermetallic layer grows towards the Sn layer and forms a discrete layer. Differences were observed only in the growth gradients and surface roughness of the intermetallic layer which may explain the different tin whiskering properties. It was observed that the intermetallic layer growth mechanisms are completely different in the Ag barrier layers compared to the Ni layers. In the case of Sn/Ag/Cu systems, the Sn and Cu diffused through the Ag layer, formed Cu6Sn5 intermetallics mainly at the Sn/Ag interface and consumed the Ag barrier layer.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Effets physiques d'irradiation, défauts d'irradiation, Physical radiation effects, radiation damage, Effets d'irradiation sur des matériaux particuliers, Radiation effects on specific materials, Matériaux nanocristallins, Nanocrystalline materials, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Electronique moléculaire, nanoélectronique, Molecular electronics, nanoelectronics, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Coefficient absorption, Absorption coefficients, Conductivité électrique, Electrical conductivity, Couche mince, Thin films, Courant photoélectrique, Photocurrents, Dispositif photovoltaïque, Photovoltaic cell, Dispositivo fotovoltaico, Effet rayonnement, Radiation effects, Etat défaut, Defect states, Formation défaut, Defect formation, Formación defecto, Microscopie force atomique, Atomic force microscopy, Nanocristal, Nanocrystal, Nanostructure, Nanostructures, Photoconductivité, Photoconductivity, Photoélectrique, Photoelectric, Fotoeléctrico, Propriété électrique, Electrical properties, Silicium, Silicon, Spectrométrie Raman, Raman spectroscopy, Traitement par laser, Laser assisted processing, Traitement surface, Surface treatments, Transformation phase cristalline, Crystal-phase transformations, Transformation phase, Phase transformations, 6182R, 8460J, Absorption, Amorphous silicon, Conductivity and photoconductivity, Constant photocurrent method, Femtosecond laser crystallization, and Hydrogen content

Femtosecond laser assisted crystallization is used to produce nanocrystalline silicon from hydrogenated amorphous silicon. Changes in structural, optical, electrical and photoelectric properties of laser modified amorphous silicon were investigated. Laser treated films were characterized using atomic force microscopy, Raman spectroscopy, constant photocurrent method and current measurements. Crystalline volume fraction as well as conductivity of laser irradiated films increased with the applied laser fluence, while hydrogen concentration in the films was found to decrease with the fluence. Spectral dependences of absorption coefficient, measured by constant photocurrent method, are discussed in terms of hydrogen out-effusion and additional defect state formation in silicon films during the laser treatment.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Phénomènes de transport électronique dans les couches minces et les structures de basse dimensionnalité, Electronic transport phenomena in thin films and low-dimensional structures, Photoconduction et effets photovoltaïques; effets photodiélectriques, Photoconduction and photovoltaic effects; photodielectric effects, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Electrodépôt, Electrodeposition, electroplating, Couche mince, Thin films, Courant photoélectrique, Photocurrents, Dépôt électrolytique, Electrodeposition, Gravure, Etching, Microscopie électronique balayage, Scanning electron microscopy, Oxyde de cuivre, Copper oxide, Cobre óxido, Photocathode, Photocathodes, Photoconductivité, Photoconductivity, Photoélectrochimie, Photoelectrochemistry, Polycristal, Polycrystals, Revêtement électrodéposé, Electrodeposited coatings, Régime permanent, Steady state, Régimen permanente, Solution aqueuse, Aqueous solutions, Spectre photoélectron RX, X-ray photoelectron spectra, Structure cristalline, Crystal structure, Sélectivité, Selectivity, Selectividad, Traitement surface, Surface treatments, Viologène polymère, Viologen polymer, Viologeno polímero, pH, pH value, 6855J, 7350P, 8115P, Cu2O, Methyl viologen, Photocorrosion, and Solar energy

The photoelectrochemical properties of electrodeposited p-type copper(I) oxide (Cu2O) films were investigated using methyl viologen (MV2+) as an electron acceptor. The pristine Cu2O films were deactivated during the photocathodic reaction as a result of self-reduction, whereas the (111)-oriented Cu2O films treated in an aqueous solution containing hexamethylenetetramine at pH 5 and 90 °C exhibited stable photocurrent for MV2+ reduction into the cation radical. Scanning electron microscope images showed that the treated films contained smaller crystal grains than untreated ones. X-ray photoelectron spectroscopy revealed that the treatment etched the thin layer of copper(II) oxide from the Cu2O polycrystalline surface. Etching of the film surface enhanced the stability and steady-state photocurrent for photocathodic reduction of MV2+, suggesting that the crystalline composition and structures exposed on the outermost surface of Cu2O polycrystalline films have a considerable influence on the selectivity for the photocathodic reaction over self-reduction.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Photoluminescence, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Adsorption, Anodisation, Anodizing, Arséniure de gallium, Gallium arsenides, Autoorganisation, Self organization, Autoorganización, Composé III-V, III-V compound, Compuesto III-V, Electrolyte, Electrolytes, Fluorure, Fluorides, Hafnium, Microscopie électronique balayage, Scanning electron microscopy, Méthode électrochimique, Electrochemical method, Método electroquímico, Photoluminescence, Réseau nid abeille, Honeycomb lattices, Semiconducteur III-V, III-V semiconductors, Structure nid abeille, Honeycomb structures, Traitement surface, Surface treatments, (NH4)2SO4, 6855J, 8105E, GaAs, Substrat GaAs, Anodization, Gallium arsenide, Self-organization, and Surface modification

GaAs substrates were anodized in the (NH4)2SO4 electrolyte with various fluoride concentrations. Scanning electron microscope (SEM) observation showed that highly regular honeycomb hollows were formed on the substrates anodized in the (NH4)2SO4 electrolyte with a small amount of HF concentration. The regularity of hollows decreased with the increase of HF concentration. The average diameter of hollows increased with increasing anodizing voltage. The regularity of hollow diameters increased with the increase of anodizing time, irrespective of the anodizing voltage. Cross-sectional SEM image showed that the average depth of regular hollows was about 5 nm. In addition to the peak in the region of fundamental adsorption of GaAs with the peak wavelength at about 870 nm, photoluminescence spectra of samples anodized in the (NH4)2SO4 electrolyte with HF concentration of 0.5 ml showed several peaks at about 610, 635, 670 and 720 nm.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Propriétés électriques de couches minces particulières, Electrical properties of specific thin films, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Propriétés optiques des couches minces, Optical properties of specific thin films, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Depôt par pulvérisation cathodique, Deposition by sputtering, Addition indium, Indium additions, Addition tungstène, Tungsten additions, Conductivité électrique, Electrical conductivity, Couche mince, Thin films, Couche monomoléculaire, Monolayers, Dépendance temps, Time dependence, Dépôt physique phase vapeur, Physical vapor deposition, Facteur transmission, Transmittance, Factor transmisión, Morphologie surface, Surface morphology, Oxyde de tungstène, Tungsten oxide, Wolframio óxido, Propriété optique, Optical properties, Propriété électrique, Electrical properties, Pulvérisation cathodique, Cathode sputtering, Pulvérisation irradiation, Sputtering, Rayonnement IR proche, Near infrared radiation, Réaction dirigée, Template reaction, Reacción dirigida, Traitement surface, Surface treatments, 6855J, 8115C, In2O3, Substrat verre, Direct current magnetron sputtering, Infrared emissivity, Surface modification, and Tungsten-doped indium oxide thin films

Tungsten-doped indium oxide films (In2O3: W, IWO) were deposited on glass substrates by DC reactive magnetron sputtering method. The as-deposited IWO films have a minimum resistivity of 6.3 × 10-4 Ω·cm and an average infrared emissivity of 0.22 in 8-14 μm. The average transmittance is about 90% in visible region and above 81% in near-infrared region. Polystyrene microsphere template and DC magnetron sputtering were used to prepare an Ag micro-grid monolayer on the as-deposited IWO films. After surface modification, the resistivity of the films was reduced by 50% and the average infrared emissivity in 8-14 μm also reduced by 25%. The effects of sphere size and sputtering time on the surface morphology, optical and electrical properties, and infrared emissivity of the IWO thin films were investigated and the mechanism was studied.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Applications des plasmas, Plasma applications, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Phénomènes de transport électronique dans les couches minces et les structures de basse dimensionnalité, Electronic transport phenomena in thin films and low-dimensional structures, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Propriétés optiques des couches minces, Optical properties of specific thin films, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Depôt par pulvérisation cathodique, Deposition by sputtering, Conductivité électrique, Electrical conductivity, Couche mince, Thin films, Diffraction RX, XRD, Décharge haute fréquence, High-frequency discharges, Dépôt physique phase vapeur, Physical vapor deposition, Dépôt pulvérisation, Sputter deposition, Faisceau électron, Electron beams, Microscopie RX, X-ray microscopy, Microscopie électronique balayage, Scanning electron microscopy, Niveau coeur, Core levels, Oxyde d'indium, Indium oxide, Indio óxido, Oxyde d'étain, Tin oxide, Estaño óxido, Propriété optique, Optical properties, Propriété électrique, Electrical properties, Pulvérisation cathodique, Cathode sputtering, Spectre photoélectron RX, X-ray photoelectron spectra, Structure cristalline, Crystal structure, Traitement par plasma, Plasma assisted processing, Traitement surface, Surface treatments, Transparence, Transparency, 8115C, Substrat oxyde d'indium et de zinc, Electron beam, Indium tin oxide, Radio-frequency magnetron sputtering, and Water plasma treatment

Electron beam and radio frequency (RF: 13.56 MHz) magnetron sputtering methods were used to obtain a highly transparent and conductive indium tin oxide (ITO) films. The coated thin films were treated by RF-H2O plasma in order to improve optical and electrical properties. RF-H2O plasma characteristics were investigated by optical emission spectroscopy during surface treatments. X-ray photoelectron spectroscopy results on O 1s core levels indicated the activated oxygen species in both amorphous and crystalline ITO structures. The structural, electrical and optical properties of ITO film were characterized by scanning electron microscopy, X-ray diffraction, and four-probe techniques. After the RF-H2O plasma treatment, the ITO films exhibited lower resistivity and better transparency due to the formation of radical species.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Etats électroniques, Electron states, Méthodes de calcul de structure électronique, Methods of electronic structure calculations, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Phénomènes de transport électronique dans les couches minces et les structures de basse dimensionnalité, Electronic transport phenomena in thin films and low-dimensional structures, Adsorption, Calcul ab initio, Ab initio calculations, Couche mince, Thin films, Etude théorique, Theoretical study, Facteur transmission, Transmittance, Factor transmisión, Gravure électrochimique, Electrochemical etching, Grabado electroquímico, Liaison disponible, Dangling bonds, Mode vibration, Vibrational modes, Méthode fonctionnelle densité, Density functional method, Semiconducteur poreux, Porous semiconductors, Silicium, Silicon, Spectre IR, Infrared spectra, Spectre absorption, Absorption spectra, Spectrométrie IR, Infrared spectroscopy, Spectrométrie transformée Fourier, Fourier transform spectroscopy, Traitement surface, Surface treatments, 7115M, Substrat silicium, Ab-initio calculations, Infrared spectrum, Oxygen adsorption, and Porous silicon

Based on the density functional perturbation theory (DFPT), infrared absorption spectra of porous silicon are calculated by using an ordered pore model, in which columns of silicon atoms are removed along the [001] direction and dangling bonds are initially saturated with hydrogen atoms. When these atoms on the pore surface are gradually replaced by oxygen ones, the ab-initio infrared absorption spectra reveal oxygen, hydroxyl, and coupled hydrogen-oxygen vibrational modes. In a parallel way, freestanding porous silicon samples were prepared by using electrochemical etching and they were further thermally oxidized in a dry oxygen ambient. Fourier transform infrared spectroscopy was used to investigate the surface modifications caused by oxygen adsorption. In particular, the predicted hydroxyl and oxygen bound to the silicon pore surface are confirmed. Finally, a global analysis of measured transmittance spectra has been performed by means of a combined DFPT and thin-film optics approach.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Phénomènes de transport électronique dans les couches minces et les structures de basse dimensionnalité, Electronic transport phenomena in thin films and low-dimensional structures, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Points quantiques, Quantum dots, Divers, Other topics in nanoscale materials and structures, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Amine, Amines, Bande interdite, Energy gap, Cellule solaire, Solar cells, Conductivité électrique, Electrical conductivity, Couche mince, Thin films, Densité porteur charge, Carrier density, Electrolyte, Electrolytes, Ligand, Ligands, Mesure électrique, Electrical measurement, Medida eléctrica, Mobilité porteur charge, Carrier mobility, Nanocristal, Nanocrystal, Nanomatériau, Nanostructured materials, Plasmon, Plasmons, Point quantique, Quantum dots, Propriété électrique, Electrical properties, Résonance plasmon surface, Surface plasmon resonance, Semiconducteur, Semiconductor materials, Spectre photoélectron RX, X-ray photoelectron spectra, Spectrométrie IR, Infrared spectroscopy, Spectrométrie transformée Fourier, Fourier transform spectroscopy, Stoechiométrie, Stoichiometry, Sulfure de cuivre, Copper sulfide, Cobre sulfuro, Thiol, Thiols, Traitement surface, Surface treatments, Transconductance, Transconductancia, 8107T, 8460J, Cu2S, Ethylènediamine, Conductivity, Fourier transform infrared spectroscopy, Nanocrystals, Plasmon resonance, and X-ray photoelectron spectroscopy

Colloidal quantum dots (CQDs) of copper sulfide (Cu2S), an earth-abundant semiconductor, have a number of intriguing applications that require knowledge of their electrical properties. Depending on stoichiometry, mobility, and surface treatment, applications include photoabsorbers for solar cells, tunable plasmonics, and counter-electrodes for polysulfate electrolytes. However, there have not been any direct measurements of electrical properties in Cu2S CQD thin films. Here, we exchange as synthesized dodecanethiol ligands with short ethanedithiol or ethylenediamine ligands to form thin films of coupled Cu2S CQDs. The mobility and carrier concentration were found to vary by ligand treatment from 10―5 cm2/Vs and 1019 holes/cm3 for ethanedithiol ligands to 10―3 cm2/Vs and 1020 holes/cm3 for ethylenediamine. These results are consistent with the carrier concentrations inferred from sub-bandgap surface-plasmon-resonances measured by infrared spectroscopy. These results will be useful when designing Cu2S materials for future applications.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Composition et identification des phases, Composition and phase identification, Changement morphologique, Morphological changes, Chauffage laser, Laser-radiation heating, Commutation, Switching, Couche mince, Thin films, Démouillage, Dewetting, Formation image, Imaging, Instabilité, Instability, Matériau PCM, PCM material, Microscopie électronique transmission, Transmission electron microscopy, Nanoseconde, Nanosecond, Nanosegundo, Résolution temporelle, Time resolution, Spectre résolution temporelle, Time resolved spectra, Traitement surface, Surface treatments, Traitement thermique, Heat treatments, Transformation phase, Phase transformations, 6855J, 6855N, GeTe, Dynamic transmission electron microscopy, In situ transmission electron microscopy, Phase change materials, and Thin film instabilities

The process of dewetting of a thin film from a solid substrate is important for its scientific and technological relevance, but can be difficult to observe experimentally. We report on an experimental method that may be used to investigate morphological changes, including dewetting, during laser heat treatment of alloys used for phase change memory devices. We have used nanosecond-scale time-resolved imaging to differentiate between competing thin film instabilities in GeTe, a chalcogenide-based phase change material. It is shown that in the absence of nucleated dewetting, thin films of phase change alloys may be unstable, but that nucleated dewetting can lead to a more disrupted final state of the thin film .

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Mouillage, Wetting, Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Divers, Other topics in nanoscale materials and structures, Chimie, Chemistry, Chimie generale et chimie physique, General and physical chemistry, Théorie des réactions, cinétique générale. Catalyse. Nomenclature, documentation chimique, informatique chimique, Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry, Catalyse, Catalysis, Catalyseurs: préparations et propriétés, Catalysts: preparations and properties, Aire superficielle, Surface area, Area superficial, Aire sélective, Selective area, Anatase, Anatasa, Angle contact, Contact angle, Angulo contacto, Autoassemblage, Self assembly, Autoensamble, Catalyseur, Catalyst, Catalizador, Composé hydrophobe, Hydrophobic compound, Compuesto hidrofobo, Couche autoassemblée, Self-assembled layer, Capa autoensamblada, Croissance cristalline en solution, Crystal growth from solutions, Effet photoinduit, Photoinduced effect, Efecto fotoinducido, Effet rayonnement, Radiation effect, Efecto radiación, Mouillabilité, Wettability, Remojabilidad, Nanostructure, Nanoestructura, Photocatalyse, Photocatalysis, Fotocatálisis, Rugosité, Roughness, Rugosidad, Synthèse hydrothermale, Hydrothermal synthesis, Titane, Titanium, Titanio, Traitement surface, Surface treatment, Tratamiento superficie, 6808B, 6855J, 8110D, Photocatalyst, Self-assembled monolaye, Superhydrophobic-superhydrophilic pattern, and Titanium dioxide

Rough nanostructured anatase TiO2 surfaces containing many pores were prepared by the hydrothermal-based method. Surface modification with self-assembled monolayers (SAMs) of octadecylphosphonic acid (ODP) resulted in the superhydrophobic surface with an extremely high static water contact angle (CA) of 173.6° ± 1.7°. This superhydrophobic surface could be converted into a superhydrophilic surface with a water CA of nearly 0° by irradiating it with ultraviolet (UV) light, which induced photocatalytic decomposition of the ODP SAM. A superhydrophobic-superhydrophilic pattern with an extremely high wettability contrast (a water CA difference of over 170°) could be fabricated on the ODP-modified TiO2 surface by area-selective UV irradiation through a photomask. This is the report of the TiO2-based superhydrophobic-superhydrophilic pattern with a water CA difference of over 170°, and it may be possible to use such patterns for various applications.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Chimie, Chemistry, Chimie generale et chimie physique, General and physical chemistry, Théorie des réactions, cinétique générale. Catalyse. Nomenclature, documentation chimique, informatique chimique, Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry, Catalyse, Catalysis, Catalyseurs: préparations et propriétés, Catalysts: preparations and properties, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Angle contact, Contact angle, Angulo contacto, Attaque chimique, Chemical etching, Ataque químico, Catalyseur, Catalyst, Catalizador, Cinétique réaction, Reaction kinetics, Couche mince, Thin film, Capa fina, Diode électroluminescente, Light emitting diode, Diodo electroluminescente, Dissolution, Disolución, Dépendance du temps, Time dependence, Dependencia del tiempo, Effet concentration, Concentration effect, Efecto concentración, Electrolyte, Electrólito, Gravure, Engraving, Grabado, Indium, Indio, Microbalance quartz, Quartz microbalance, Microbalanza cuarzo, Microscopie force atomique, Atomic force microscopy, Microscopía fuerza atómica, Modèle cinétique, Kinetic model, Modelo cinético, Oxyde d'indium, Indium oxide, Indio óxido, Oxyde d'étain, Tin oxide, Estaño óxido, Porosité, Porosity, Porosidad, Réaction chimique, Chemical reaction, Reacción química, Spectre photoélectron RX, X-ray photoelectron spectra, Traitement chimique, Chemical treatment, Tratamiento químico, Traitement surface, Surface treatment, Tratamiento superficie, pH, 6855J, 8560D, 8560J, Etching, Indium tin oxide, Quartz crystal microbalance, and X-ray photoelectron spectroscopy

We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Applications des plasmas, Plasma applications, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Epitaxie en phase vapeur; croissance en phase vapeur, Vapor phase epitaxy; growth from vapor phase, Chimie, Chemistry, Chimie generale et chimie physique, General and physical chemistry, Electrochimie, Electrochemistry, Electrodes: préparations et propriétés, Electrodes: preparations and properties, Acier, Steels, Corrosion, Couche mince, Thin films, Couche oxyde, Oxide layer, Capa óxido, Croissance cristalline en phase vapeur, Crystal growth from vapors, Croissance film, Film growth, Diode électroluminescente, Light emitting diodes, Interface, Interfaces, Microscopie électronique transmission, Transmission electron microscopy, Méthode couche atomique, Atomic layer method, Método capa atómica, Oxyde d'aluminium, Aluminium oxide, Aluminio óxido, Plasma thermique, Thermal plasma, Plasma térmico, Porosité, Porosity, Propriété électrochimique, Electrochemical properties, Propiedad electroquímica, Protection corrosion, Corrosion protection, Précurseur, Precursor, Prétraitement, Pretreatment, Pretratamiento, Revêtement, Coatings, Spectrométrie masse temps vol, Time of flight mass spectroscopy, Traitement par plasma, Plasma assisted processing, Traitement surface, Surface treatments, 6855J, 8115K, 8245M, Al2O3, Substrat Al2O3, Substrat acier, Atomic layer deposition, Coating, Plasma pre-treatment, and Plasma-enhanced atomic layer deposition

The effect of H2―Ar plasma pre-treatment prior to thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PEALD) of Al2O3 films on steel for corrosion protection was investigated. Time-of-flight secondary ion mass spectrometry and transmission electron microscopy were used to observe the changes in the interface. The electrochemical properties of the samples were studied with polarization measurements, and the coating porosities were calculated from the polarization results for easier comparison of the coatings. Prior to thermal ALD the plasma pre-treatment was observed to reduce the amount of impurities at the interface and coating porosity by 1-3 orders of magnitude. The anti-corrosion properties of the PEALD coatings could also be improved by the pre-treatment However, exposure of the pre-treatment plasma activated steel surface to oxygen plasma species in PEALD led to facile oxide layer formation in the interface. The oxide layer formed this way was thicker than the native oxide layer and appeared to be detrimental to the protective properties of the coating. The best performance for PEALD Al2O3 coatings was achieved when, after the plasma pre-treatment, the surface was given time to regrow a thin protective interfacial oxide prior to exposure to the oxygen plasma. The different effects that thermal and plasma-enhanced ALD have on the substrate-coating interface were compared. The reactivity of the oxygen precursor was shown to have a significant influence on substrate surface in the early stages of film growth and thereafter also on the overall quality of the protective film.

Crystallography, Cristallographie cristallogenèse, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Cristaux liquides, Liquid crystals, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Etats électroniques de surface et d'interface, Surface and interface electron states, Etats de surface, structure de bande, densité d'états électroniques, Surface states, band structure, electron density of states, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Biodétecteur, Biosensors, Champ faible, Low field, Campo débil, Couche active, Active layer, Capa activa, Couche mince, Thin films, Cristal liquide, Liquid crystals, Défaut cristallin, Crystal defects, Dépôt centrifugation, Spin-on coating, Effet surface, Surface effect, Efecto superficie, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Hystérésis, Hysteresis, Impression à jet d'encre, Ink jet printing, Impresión por chorro de tinta, Interface, Interfaces, Joint grain, Grain boundaries, Oxyde de silicium, Silicon oxides, Piégeage, Trapping, Procédé sol gel, Sol-gel process, Propriété électrique, Electrical properties, Propriété électronique, Electronic properties, Propiedad electrónica, Revêtement centrifugation, Spin-on coatings, Semiconducteur organique, Organic semiconductors, Sonde Kelvin, Kelvin probe, Sonda Kelvin, Structure cristalline, Crystal structure, Structure locale, Local structure, Estructura local, Structure électronique, Electronic structure, Synthèse nanomatériau, Nanomaterial synthesis, Síntesis nanomaterial, Traitement surface, Surface treatments, Transistor couche mince, Thin film transistors, 6855J, 8530T, Dioctylterthiophene, Kelvin Probe Force Microscopy (KPFM), and Organic thin film transistor (OTFT)

It appeared in the past decades that semi-conducting organic liquid crystals could be used as the active layer in organic thin film transistors (OTFTs). They can be processed by simple methods such as inkjet printing, which paves the way to applications for cheap plastic electronics such as electronic tags, biosensors, and flexible screens. However, the measured field-effect mobility in these OTFTs is relatively low compared to inorganic devices. Generally, such low field-effect mobility values result from extrinsic effects such as grain boundaries or imperfect interfaces with source and drain electrodes. It has been shown that reducing the number of grain boundaries between the source and drain electrodes improves the field effect mobility. Therefore, it is important to understand the transport mechanisms by studying the local structure and electronic properties of organic thin films within the channel and at the interfaces with source and drain electrodes in order to improve the field-effect mobility in OTFTs. Kelvin probe force microscopy (KPFM) is an ideal tool for that purpose since it allows to simultaneously investigate the local structure and the electrical potential distribution in electronic devices. In this work, the structure and the electrical properties of OTFTs based on dioctylterthiophene (DOTT) were studied. The transistors were fabricated by spin-coating DOTT on the transistor structures with untreated and treated (silanized) channel silicon oxide. The potential profiles across the channel and at the metal-electrode interfaces were measured by KPFM. The effect of surface treatment on the electrical properties, charge trapping phenomenon and hysteresis effects is demonstrated and analyzed.