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General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Etude théorique, Theoretical study, Nettoyage surface, Surface cleaning, Pastille électronique, Wafers, Phénomène transport, Transport processes, Simulation numérique, Digital simulation, Traitement surface, Surface treatments, Traitement voie humide, Wet treatment, and Tratamiento vía húmeda

Water flow in an overflow rinse bath of the carrierless wet station for cleaning silicon wafers of 300 mm diam was studied, from the view point of the transport phenomena. Both the experiment of flow visualization and the numerical calculation using the transport equations show that the direction and the velocity distribution of the water from the water nozzle can be optimized by adjusting the wall thickness of the water nozzle. Additionally, this direction is shown to influence the water motion in the entire rinse bath and that between the wafers. Theoretical calculations taking the entire geometry and the detail of the water nozzle into account are shown to be applicable to predict and design the water flow in the wet cleaning bath.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Contrainte compression, Compressive stress, Tensión compresión, Contrainte flexion, Bending stress, Tensión flexión, Distribution contrainte, Stress distribution, Etude théorique, Theoretical study, Méthode élément fini, Finite element method, Pastille électronique, Wafers, Planarisation, Planarization, Polissage mécanochimique, Chemical mechanical polishing, Simulation numérique, Digital simulation, Traitement surface, and Surface treatments

Wafer curvature, contact pressure, and film stresses have been a subject of interest to many researchers who are working on the modeling of within-wafer nonuniformity in chemical mechanical polishing (CMP). Wafer shape and film stresses prior to and after CMP have been measured before in order to correlate film stresses with removal rate distribution across the wafer. In this paper we describe measurements of wafer bending under static loading and in dynamic conditions. A finite element analysis is also carried out to model wafer bending under static loading.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Autres spectres de luminescence et recombinaison radiative, Other luminescence and radiative recombination, Cathodoluminescence, ionoluminescence, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Métal transition Composé, Transition elements Compounds, Compuesto, Argent, Silver, Cathodoluminescence, Chlore, Chlorine, Matériau luminescent, Phosphors, Matériau modifié, Modified material, Material modificado, Potassium hydroxyde, Potassium hydroxides, Solution aqueuse, Aqueous solutions, Spectrométrie Auger, AES, Spectrométrie luminescence, Luminescence spectrometry, Espectrometría luminescencia, Traitement par ultrasons, Ultrasonic treatment, Tratamiento por ultrasonido, Traitement surface, Surface treatments, Zinc sulfure, and Zinc sulfides

A commercially available blue emitting ZnS:Ag,Cl phosphor was surface-treated with a combination of stirring and ultrasonication in KOH solutions. The stirring and ultrasonication (SUST) enhanced the cathodoluminescence efficiency by 58%. From surface analyses, it was confirmed that OH- ions were physisorbed on the surface of the phosphor, and they formed an additional electrical field on the surface into the E-beam induced field present in cathodoluminescent mode of operation. We observed that the maximum increase of phosphor efficiency at low applied voltages was around 800 V, that the recombination rate of the nonequilibrium charge carriers increased over two times, and that the diffusion-drift length was reduced after SUST. This can be explained by the formation of the increased electrical fields induced by physisorbed OH- ions on the phosphor surface.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Métal transition, Transition elements, Couche mince métallique, Metallic thin films, Cuivre, Copper, Particule usure, Wear particle, Partícula desgaste, Planarisation, Planarization, Polissage mécanochimique, Chemical mechanical polishing, Traitement surface, Surface treatments, Usure adhésive, Adhesive wear, and Desgaste adhesivo

The adhesion force of silica particles to Cu films and the role of additives on adhesion and removal of particles have been theoretically and experimentally investigated in citric-acid-based post-Cu chemical mechanical planarization (CMP) cleaning solutions. The zeta potential of silica and Cu slightly increases when citric acid is added due to the adsorption of citrates. Citric acid is adsorbed on silica and Cu surfaces, resulting in more negative charges on these surfaces. The adhesion force of silica particles on Cu decreases as the citric acid concentration increases due to more repulsive electrostatic interaction between surfaces. The addition of benzotriazole in the cleaning solution initially decreases adhesion then increases it at high concentrations due to the change in zeta potentials. The addition of tetramethylammonium hydroxide to citric acid increases the particle adhesion force. However, the addition of NH4OH results in the lowest adhesion forces. The highest particle removal efficiency is observed when using cleaning solutions that yield the lowest adhesion force.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Corrosion, Protection contre la corrosion, Corrosion prevention, Alliage base aluminium, Aluminium base alloys, Chrome composé, Chromium compound, Cromo compuesto, Chromverbindung, Composition chimique, Chemical composition, Composición química, Chemische Zusammensetzung, Composé intermétallique, Intermetallic compound, Compuesto intermetálico, Intermetallische Verbindung, Corrosion électrochimique, Electrochemical corrosion, Corrosión electroquímica, Elektrochemische Korrosion, Protection corrosion, Corrosion protection, Protección corrosión, Korrosionsschutz, Résistance corrosion, Corrosion resistance, Resistencia corrosión, Korrosionsbestaendigkeit, Spectrométrie XANES, XANES spectrometry, Espectrometría XANES, Spectrométrie photoélectron, Photoelectron spectrometry, Espectrometría fotoelectrón, ESCA Spektrometrie, Traitement surface, Surface treatment, Tratamiento superficie, Oberflaechenbehandlung, and Alliage AA2024-T3

Aluminum alloy AA2024-T3 samples, subjected to various pretreatments, were conversion coated using Alodine 1200S. The ratio of hexavalent chromium to total chromium in the chromate conversion coating (CCC) was determined by X-ray absorption near-edge spectroscopy. The hexavalent chromium content of the CCC formed on AA2024-T3 varied with the method of pretreatment. The coated surfaces were analyzed by X-ray photoelectron spectroscopy to determine the surface composition of the coatings. Cr(VI) forms the major constituent (46-74% of total chromium) on the surface. Protective passive films of aluminum oxide and aluminum phosphate inhibit the formation of CCCs. Corrosion behavior of the CCCs were studied using open-circuit potential measurements, potentiodynamic polarization, and electrochemical impedance spectroscopy (EIS). Conversion coated alloys exhibited up to 40-fold higher corrosion resistance when compared to bare pretreated alloys. EIS behavior was modeled using a seven-element equivalent circuit. EIS results indicated industrially used bromate pretreatment to be best suited for CCC formation. Coupling the AA2024-T3 alloy with platinum during bromate pretreatment resulted in lowering the amount of copper intermetallics on the surface. This led to an increase in the corrosion resistance of the subsequently formed CCC by over an order of magnitude as compared to CCCs formed following alternative pretreatments. Therefore, this simple modification of coupling this alloy with platinum is recommended.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Corrosion, Protection contre la corrosion, Corrosion prevention, Alliage base aluminium, Aluminium base alloys, Chrome composé, Chromium compound, Cromo compuesto, Chromverbindung, Composition chimique, Chemical composition, Composición química, Chemische Zusammensetzung, Corrosion électrochimique, Electrochemical corrosion, Corrosión electroquímica, Elektrochemische Korrosion, Courant corrosion, Corrosion current, Corriente corrosión, Korrosionsstrom, Protection corrosion, Corrosion protection, Protección corrosión, Korrosionsschutz, Résistance corrosion, Corrosion resistance, Resistencia corrosión, Korrosionsbestaendigkeit, Spectrométrie photoélectron, Photoelectron spectrometry, Espectrometría fotoelectrón, ESCA Spektrometrie, Traitement surface, Surface treatment, Tratamiento superficie, Oberflaechenbehandlung, and Alliage AA2024-T3

Aluminum alloy AA2024-T3 has been subjected to various pretreatments including those routinely carried out in the industry prior to conversion coating of the alloy. The surface chemistry of the samples after pretreatment was analyzed using variable angle X-ray photoelectron spectroscopy (VAXPS). Electrochemical techniques were used to evaluate the corrosion behavior of the samples in quiescent 0.05 M NaCI solution. The results were compared with those obtained from an untreated sample used in as-received condition that acted as a control. The surface of the alloy was observed to be enriched in copper and magnesium after certain pretreatments. Composition of the surface oxide film as well as the electrochemical behavior was found to vary significantly depending on the pretreatment. In all cases, the overlayer formed on the alloy was less than the sampling depth of the XPS (∼90 Å). Pretreatment of the alloy using Alconox® was found to result in the formation of a highly protective aluminum oxide (Al2O3) surface film. The corrosion current of the samples was observed to be directly proportional to the aluminum oxyhydroxide content of the film, while the polarization resistance of the sample was inversely proportional to the surface copper content.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Couche mince semiconductrice, Semiconductor thin films, Effet concentration, Quantity ratio, Effet température, Temperature effects, Gravure électrochimique, Electrochemical etching, Grabado electroquímico, Semiconducteur élémentaire, Elemental semiconductors, Silicium, Silicon, Traitement surface, Surface treatments, Vitesse gravure, Etching rate, Velocidad grabado, and Chlore trifluorure

The mechanism causing the behavior of the silicon etch rate using chlorine trifluoride gas, which appears to be independent of the substrate temperature in a horizontal cold-wall reactor, is clarified by means of numerical calculations taking into account the surface chemical reaction rate on the silicon substrate surface and the transport phenomena in the entire reactor. The activation energy of the overall rate constant of its surface chemical reaction is evaluated, for the first time, to be 6000 J mol-1, which can reproduce the etch rate and its behavior obtained by the measurement. With increasing substrate temperature in the reactor, the effect of a moderate increase in both the diffusivity of chlorine trifluoride gas and the overall rate constant is considered to be compensated by the decrease in the chlorine trifluoride gas concentration due to the gas volume expansion in the gas phase above the substrate. Therefore, the etch rate can be independent of the substrate temperature.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Ethylène oxyde polymère, Polyethylene glycols, Méthacrylate d'alkyle polymère, Alkyl methacrylate polymer, Metacrilato de alquilo polímero, Pastille électronique, Wafers, Planarisation, Planarization, Polissage mécanochimique, Chemical mechanical polishing, Polymère aliphatique, Aliphatic polymer, Polímero alifático, Traitement surface, Surface treatments, Usure abrasive, Abrasive wear, Desgaste abrasivo, and Polymère hydrophile

It has been known that overpolishing in chemical mechanical polishing (CMP) depends on pattern selectivity as a function of density and pitch, and use of a fixed abrasive pad is one method which can improve the pattern selectivity. This paper introduces the fixed abrasive pad using the swelling characteristic of hydrophilic polymers, which can acquire self-conditioning during CMP. When applied to tungsten blanket wafers, the fixed abrasive pad showed better pattern selectivity compared to the general polishing process, and, also, erosion was measured for ∼20 nm or less at even 100% overpolishing.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Contrainte frottement, Friction stress, Tensión rozamiento, Coussinet adhésif, Adhesive pad, Cojinete adhesivo, Distribution contrainte, Stress distribution, Etude théorique, Theoretical study, Modèle rhéologique, Rheological model, Modelo reológico, Pastille électronique, Wafers, Planarisation, Planarization, Polissage mécanochimique, Chemical mechanical polishing, Simulation numérique, Digital simulation, Traitement surface, Surface treatments, Uréthanne polymère, and Polyurethanes

It was shown by parallel plate rheological experiments that a second-order normal force develops between a polyurethane planarizing pad and a patterned silicon dioxide wafer upon sliding contact. Both torque and normal force increase with increasing down force and increasing rate of shear. From these data a linear relation was found between normal force and torque squared as required by second-order theory. The slope of the line was one in the dry condition, increased significantly upon application of an abrasive slurry, and decreased from a dishing-reducing additive. The normal force caused normal extension of the polyurethane pad into the down areas of the wafer which was estimated from elaborate polishing experiments. This extension was also reduced by a dishing-reducing additive. No normal force developed between a fixed abrasive pad, known for creating perfect planarization, and a wafer, further indicating a causal relationship between the development of normal force in the pad during chemical mechanical planarization and the dishing of the down areas of a wafer.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Métal transition, Transition elements, Cuivre, Copper, Diagramme Nyquist, Nyquist diagrams, Feuille métallique, Metal foil, Hoja metálica, Glycine, Hydrogène peroxyde, Hydrogen peroxide, Particule solide, Solid particle, Partícula sólida, Planarisation, Planarization, Polissage mécanochimique, Chemical mechanical polishing, Solution aqueuse, Aqueous solutions, Traitement surface, and Surface treatments

Peroxide-based slurries are commonly used in chemical mechanical polishing (CMP) of copper. When glycine is included in such a slurry, the planarization efficiency of Cu-CMP is considerably enhanced. In this work, we investigate the selective and collective chemical effects of H2O2 and glycine that promote favorable conditions for CMP of Cu. A number of surface reactions contribute to metal removal in this system by forming soluble surface complexes that can be easily removed by mechanical abrasion. We use Fourier transform electrochemical impedance spectroscopy (FT-EIS) to probe these reactions. The FT-EIS results provide detailed circuit models of the chemically active Cu interface. Simple analyses of the voltage-dependent kinetic (circuit) parameters of these models allow us to propose and examine the reaction steps for Cu-glycine complex formation on oxidized Cu.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Métal transition, Transition elements, Couche mince métallique, Metallic thin films, Cuivre, Copper, Dépôt électrolytique, Electrodeposition, Lithographie faisceau ion, Ion beam lithography, Microscopie force atomique, Atomic force microscopy, Microscopie électronique balayage, Scanning electron microscopy, Structure surface, Surface structure, Traitement surface, and Surface treatments

A new type of a electrochemical scanning probe microscope is presented. This technique uses a small capillary as a probe which is scanned over the sample surface. The capillary is filled with the electrolyte. With a counter and reference electrode attached from the rear side this constitutes a complete electrochemical cell. Therefore, there is no need to submerge the whole sample in the electrolyte. This new technique has the advantage that no contamination of the surface due to the electrolyte can take place because the sample is only exposed to the electrolyte at the relevant point. This electrochemical scanning capillary microscope has been used for the deposition of submicrometer-wide copper lines on gold and silicon crystals. Linewidths as small as 200 nm were obtained. The deposited copper structures were analyzed by means of energy-dispersive X-ray and Auger electron spectroscopy techniques.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Métal transition, Transition elements, Couche mince métallique, Metallic thin films, Cuivre, Copper, Dépôt électrolytique, Electrodeposition, Planarisation, Planarization, Structure interface, Interface structure, Technologie faisceau ion focalisé, Focused ion beam technology, Traitement surface, and Surface treatments

Electrochemical mechanical deposition (ECMD) is a new technique that has the ability to deposit planar copper films on nonplanar substrate surfaces. This technique involves electrochemical deposition and simultaneous sweeping of the substrate surface with a planarization pad. In this study we show that planarization of low-aspect-ratio features on a wafer surface by ECMD is due to a newly identified mechanically induced superfilling phenomenon. Sweeping of the top surface of the wafer at preset intervals establishes a transient differential in the surface coverage of organic additives at the top surface and the cavity regions, preferentially increasing the current flow into the cavities. Planarization decreases as the time interval between sweeps increases. Increase in the deposition rate of copper into the low-aspect-ratio features results in an associated decrease of deposition onto the top surface under galvanostatic conditions. A model that invokes surface coverage transients of accelerator species is offered to explain the experimental results.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Propriétés et essais, Properties and testing, Analyse et structure, Analysis and structure, Dégradation oxydante, Oxidative degradation, Degradación oxidante, Epoxyde résine, Epoxy resin, Epóxido resina, Etude théorique, Theoretical study, Force adhérence, Adhesive strength, Fuerza adherencia, Microscopie force atomique, Atomic force microscopy, Modèle cinétique, Kinetic model, Modelo cinético, Structure surface, Surface structure, Surface rugueuse, Rough surfaces, Topographie surface, Surface topography, Traitement surface, and Surface treatments

The adhesion of plated metal layers to epoxy polymer surfaces is of prime importance for the reliability of interconnections in microelectronics. An increase in the roughness of the polymer surface, caused by chemical treatment, plays an important part in the adhesion strength of plated metal layers by increasing the total area of interaction between both layers. This kinetic study of the influence of chemical treatments on the surface of the polymer consists of two parts. In Part I the kinetics of sweller treatments and of the solvent were examined in detail and a kinetic model for the influence of sweller and solvent was developed. In this second part the kinetics of the formation of roughness at the polymer surface due to oxidative liquid treatments is examined. A kinetic model is developed based on experimental studies, compromising the combined effects of sweller-oxidizer treatments and the influence of diffusion of the different components. A number of examples are given and verified by experiment. The roughness of the treated polymer samples is measured experimentally by atomic force microscopy. Time-dependant mass measurements were used to record mass changes due to diffusion and reaction.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Propriétés et essais, Properties and testing, Analyse et structure, Analysis and structure, Epoxyde résine, Epoxy resin, Epóxido resina, Etude théorique, Theoretical study, Force adhérence, Adhesive strength, Fuerza adherencia, Microscopie force atomique, Atomic force microscopy, Modèle cinétique, Kinetic model, Modelo cinético, Réflexion totale atténuée, Attenuated total reflection, Spectrométrie IR, Infrared spectroscopy, Structure surface, Surface structure, Surface rugueuse, Rough surfaces, Topographie surface, Surface topography, Traitement surface, and Surface treatments

The adhesion of plated metal layers to epoxy polymer surfaces is of prime importance for the reliability of electronic interconnections. An increase in the roughness of the polymer surface, caused by chemical treatment, strengthens adhesion by increasing the total area of interaction between both layers. The evolution of the roughness at the polymer surface is studied through the kinetics of the chemical reactions on the surface. Sweller agents, that are able to diffuse through the free volume of the polymer, react with polar groups present in the bulk of the polymer and form channels. An increase in polar groups at the surface and the formation of channels facilitates the transport of water through the free volume of the polymer. The polar groups in these patches react with oxidizers and cause the formation of cavities as reported in literature. A mathematical model is developed to explain the influence of swellers and oxidizing agents on the development of polymer surface roughness. This model is based on atomic force microscopy measurements for the roughness and on attenuated total reflectance-infrared and electron spectroscopy for chemical analysis for the chemical changes on the polymer surface. Mass measurements are also used to record mass changes. The proposed model permits the prediction of roughness evolution.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Métal transition, Transition elements, Coefficient frottement, Friction factor, Couche mince métallique, Metallic thin films, Cuivre, Copper, Microscopie force atomique, Atomic force microscopy, Particule solide, Solid particle, Partícula sólida, Planarisation, Planarization, Polissage mécanochimique, Chemical mechanical polishing, Structure surface, Surface structure, Topographie surface, Surface topography, Traitement surface, and Surface treatments

In this paper we continue our (CMP) of copper mechanism study of the chemical mechanical polishing using a novel experimental approach. We investigated the effects of chemical reagents in the polishing slurry on the removal behavior of copper film during its CMP. More specifically, the friction and wear of the copper surface against a polyurethane pad were measured in the presence of slurries containing various chemical constituents and surface-treated abrasive particles. These slurries are typically formulated for Cu CMP in the industry. The surface qualities and wear mechanisms were then investigated using an atomic force microscope. The experimental results indicate that the copper removal mechanism in the presence of an abrasive and DI water alone was dominated by mechanical abrasion, while chemical dissolution of copper is much more pronounced when the slurry was added a complexing agent such as glycine, regardless the involvement of the strong oxidizer hydrogen peroxide. In the presence of a slurry consisting of hydrogen peroxide, glycine, and nanometer-sized silica particles, a series of electrochemical reactions promotes the rapid formation of copper oxide and the redeposition of Cu(OH)2 precipitation. Based on these tribological investigations we attempt to describe the nature of the material removal, which is one of the key unanswered questions in the CMP community.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Diffusion chimique, Chemical diffusion, Difusión química, Phénomène transport, Transport processes, Planarisation, Planarization, Polissage mécanochimique, Chemical mechanical polishing, Potassium ion, Potassium ions, Silicium oxyde, Silicon oxides, Solution aqueuse, Aqueous solutions, Spectrométrie IR, Infrared spectroscopy, Traitement surface, and Surface treatments

Internal reflection infrared spectroscopy was used to examine the effect of potassium ions on the interaction of water with silicon dioxide at low temperature, relevant to chemical mechanical planarization (CMP) of silicon dioxide. Silanol (SiOH) formation was enhanced in silicon dioxide samples exposed to aqueous solutions of potassium chloride and potassium nitrate as compared to those exposed to water, due to a reduction in the thermodynamic activity of the water in potassium salt solutions. However, molecular water was the predominant hydrous species observed in the silicon dioxide. The presence of potassium ions had no significant effect on the effective diffusion coefficient of water in silicon dioxide. Results presented here indicate that the potassium ion concentration, and more specifically the water activity, is a critical factor in the chemical component of the silicon dioxide CMP mechanism.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Corrosion, Protection contre la corrosion, Corrosion prevention, Acier inoxydable 304, Stainless steel-304, Corrosion piqûre, Pitting corrosion, Corrosión superficial, Lochkorrosion, Corrosion électrochimique, Electrochemical corrosion, Corrosión electroquímica, Elektrochemische Korrosion, Potentiel formation piqûre, Pitting potential, Potencial picadura, Lochkorrosionspotential, Protection corrosion, Corrosion protection, Protección corrosión, Korrosionsschutz, Résistance corrosion, Corrosion resistance, Resistencia corrosión, Korrosionsbestaendigkeit, Sodium Métasilicate, Sodium Metasilicates, Sodio Metasilicato, Solution aqueuse, Aqueous solution, Solución acuosa, Waesserige Loesung, Traitement surface, Surface treatment, Tratamiento superficie, and Oberflaechenbehandlung

Mild anodizing treatment of 304 stainless steel microelectrodes in sodium metasilicate solution reduces the frequency of pit nucleation events markedly when the metal is subsequently exposed to acidic chloride solutions. The same treatment of larger specimens increases the pitting potential substantially. The results confirm that the frequency and/or amplitude of the current spikes that nucleate pitting corrosion on an ultramicroscopic scale have a strong bearing on the pitting characteristics of the metal. Identical surface treatment, but in hydroxide solution of pH similar to the metasilicate solution, yields a much smaller improvement in pitting characteristics, as demonstrated by both analysis of the pit nucleation events on microelectrodes as well as the pitting potential. The effect of the metasilicate treatment is due to a specific action of the metasilicate anion with the pit nucleation sites. The effect on the overall passive state is marginal. It is proposed that the metasilicate treatment effectively caps the pit nucleation sites by forming a silicate- or silica-rich coating over those sites, a process we term electrochemical pit site capping.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Face cristalline, Crystal faces, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Gravure électrochimique, Electrochemical etching, Grabado electroquímico, Indium phosphure, Indium phosphides, Microscopie électronique balayage, Scanning electron microscopy, Plasma couplé inductivement, Inductively coupled plasma, Semiconducteur III-V, III-V semiconductors, Spectrométrie photoélectron, Photoelectron spectroscopy, Structure surface, Surface structure, Surface rugueuse, Rough surfaces, Topographie surface, Surface topography, Traitement surface, and Surface treatments

A systematic study of the etching of InP material by hydrogen bromide (HBr)-based chemistry is conducted using the inductively coupled plasma (ICP) technique. Sidewall profiles, material selectivity, surface morphologies, and the residual species due to the chemistry are observed as functions of varying process parameters like ICP power, reactive ion etching (RIE) power and pressure. The highest selectivity of InP:PR of 4.2 is achieved at an ICP power of 100 W for a constant set of RIE power, pressure, HBr flow rate, and temperature parameters. Sidewall striations on etched faces have been eliminated by optimizing baking parameters on the photoresist pattern prior to etching. A characteristic kink effect phenomenon is observed with the introduction of argon in HBr chemistry to which is attributed the fluctuation of the chamber pressure. X-ray photoelectron spectroscopy results indicate the strong presence of InBrx, which is believed to affect the formation of anisotropic sidewalls at room temperature.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Corrosion, Protection contre la corrosion, Corrosion prevention, Métal transition, Transition elements, Benzotriazole, Benzotriazol, Cuivre, Copper, Feuille métallique, Metal foil, Hoja metálica, Blattmetall, Inhibiteur corrosion, Corrosion inhibitors, Méthode galvanostatique, Galvanostatic method, Método galvanostático, Méthode potentiodynamique, Potentiodynamic method, Método potenciodinámico, Planarisation, Planarization, Polissage mécanochimique, Chemical mechanical polishing, Potentiel passivation, Passivation potential, Potencial pasivación, Passivierungspotential, Résistance corrosion, Corrosion resistance, Traitement surface, and Surface treatments

Galvanostatic measurements, conducted using a novel electrochemical chemical mechanical planaritation tool, revealed surface passivation layers on copper-coated silicon wafers using benzotriazole (BTAH), ammonium salicylate, maleic acid, malonic acid, and 3-methyl-2-oxazolidinone. Measurements conducted in 249.5 g/L hydroxylamine sulfate containing 250 ppm of BTAH at pH 3.5 exhibited bilayer formation with associated measured passivation rates of 0.313/s and 0.00427/s. Similar rates were measured for ammonium salicylate and maleic acid.

General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Electrical engineering, Electrotechnique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Métal transition, Transition elements, Aluminium, Corrosion électrochimique, Electrochemical corrosion, Couche mince métallique, Metallic thin films, Planarisation, Planarization, Polissage mécanochimique, Chemical mechanical polishing, Réaction électrochimique, Electrochemical reaction, Reacción electroquímica, Résistance polarisation, Polarization resistance, Resistencia polarización, Titane, Titanium, Traitement surface, Surface treatments, Usure abrasive, Abrasive wear, and Desgaste abrasivo

The objective of this paper was to characterize the fundamental electrochemical behavior of thin aluminum-0.5% copper/titanium stack films before, during, and after abrasion in a commercially available alumina-based slurry containing iodate as an oxidant. A research apparatus in which electrochemical tests can be carried out during polishing was fabricated and used for this research. During the abrasion of the Al/Ti film stack, a sharp rise in corrosion potential (Ecorr), on the order of 1000 mV, was measured. The transition was much sharper with the low-temperature (25°C) Al film than the high-temperature (475°C) Al thin film. The slower transition in open-circuit potential in high-temperature films is most likely due to a Ti-Al intermetallic compound formed at the Al/Ti interface. Additionally, the galvanic corrosion between Al and Ti during abrasion was investigated.