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Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Physicochimie des polymeres, Physicochemistry of polymers, Polymères organiques, Organic polymers, Propriétés et caractérisation, Properties and characterization, Propriétés de surface, Surface properties, Aluminisation, Aluminizing, Aluminizacion, Aluminium, Aluminio, Ethylène téréphtalate polymère, Ethylene terephthalate polymer, Etileno tereftalato polímero, Interface, Interfase, Rétrodiffusion Rutherford, Rutherford backscattering, Retrodifusión Rutherford, Traitement surface, Surface treatment, and Tratamiento superficie

In the present work, the carbon-to-oxygen ratio of Mylar (in the form of aluminized Mylar) and the aluminum-Mylar interface character have been studied using a proton elastic backscattering method at five different incident energies ranging from 1.67 to 3.74 MeV. Using the available proton elastic scattering cross-section data of C and O, a proton backscattered spectrum of Mylar for a proton energy of 1.67 MeV was simulated. Best fitting of the simulated spectrum was achieved for a bulk carbon-to-oxygen ratio of 2.39±0.06 and a linearly varying ratio between 1.63 and 2.39 at the aluminum-Mylar interface region. The richness of oxygen at the interface region is attributed to stronger binding of aluminum with oxygen.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Ablation, Ablación, Absorption optique, Optical absorption, Absorción óptica, Conductivité électrique, Electrical conductivity, Conductividad eléctrica, Imide polymère, Polyimide, Imida polímero, Irradiation proton, Proton irradiation, Irradiación protón, Traitement surface, Surface treatment, and Tratamiento superficie

High intensity proton pulses of 50 ns length were used to modify polyimide surfaces. The deposited energy and power density were similar to the corresponding experiments with UV laser pulses. Due to the constant range of the protons a well-defined layer of about 1.5 μm is heated. The induced optical absorption, electrical conductivity, and the ablation were studied. The results are consistently explained by a thermal model.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Ablation, Ablación, Ethylène(tétrafluoro) polymère, Tetrafluoroethylene polymer, Etileno(tetrafluoro) polímero, Imide polymère, Polyimide, Imida polímero, Laser, Polymère dopé, Doped polymer, Polímero dopado, Traitement surface, Surface treatment, and Tratamiento superficie

Experimental data on the 248 and 308 nm wavelength excimer laser ablation at poly (tetrafluoroethylene) doped with polymide (PI) are reported for a range of fluences and dopant concentrations. Threshold fluences were determined and a correlation was obtained between the dopant concentration and the threshold fluence. The threshold fluences and the limiting etch rates at high fluences decreased with increasing dopant concentration, and there is a minimum dopant concentration below which there is no ablation at both of the wavelengths. The side wall taper of the ablated holes increased with increasing dopant concentration. At subthreshold fluences, the polymer surface was modified with selective removal of PI from the polymer blend.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Caractéristique électrique, Electrical characteristic, Característica eléctrica, Composé III-V, III-V compound, Compuesto III-V, Composé binaire, Binary compound, Compuesto binario, Composé ternaire, Ternary compound, Compuesto ternario, Etude expérimentale, Experimental study, Estudio experimental, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Indium Arséniure, Indium Arsenides, Indio Arseniuro, Indium Phosphure, Indium Phosphides, Indio Fosfuro, Passivation, Pasivación, Processus fabrication, Production process, Proceso fabricación, Silicium Nitrure, Silicon Nitrides, Silicio Nitruro, Technologie bipolaire, Bipolar technology, Tecnología bipolar, Traitement surface, Surface treatment, Tratamiento superficie, Transistor hétérojonction, Heterojunction transistor, Transistor heterounión, As Ga In, In P, InGaAs, InP, N Si, and SiN

The effects of the SiN layer normally used to passivate and protect the exposed junction surfaces in InP/InGaAs heterojunction bipolar transistors have been studied and shown to degrade the transistor properties. These effects are ascribed primarily to surface damage associated with the high SiN deposition temperature (350°C). A degradation of the emitter-base properties was observed through the nonideal behavior of the base current and the measured short minority-carrier lifetime in the base, extracted by using the base width modulation method. Degradation in the current gain and emitter injection efficiency was also observed.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Analyse surface, Surface analysis, Análisis superficie, Electrisation, Electrostatic electrification, Electrización, Etude expérimentale, Experimental study, Estudio experimental, Mécanisme, Mechanism, Mecanismo, Méthacrylate de méthyle polymère, Methyl methacrylate polymer, Metacrilato de metilo polímero, Plasma, Poudre, Powder, Polvo, Propriété triboélectrique, Triboelectric properties, Propiedad triboeléctrica, Styrène polymère, Styrene polymer, Estireno polímero, Traitement surface, Surface treatment, and Tratamiento superficie

Surfaces of fine polystyrene (PS) and polymethyl methacrylate (PMMA) powders were modified by exposure to the downstream products of a nitrogen or oxygen microwave plasma. After nitrogen plasma treatment, the XPS C 1s peak shapes suggested the formation of amines in the case of PS, and the formation of imines and amides in the case of PMMA. Oxygen plasma treatment appears to result in the formation of hydroxyl and carbonyl groups on the surfaces of both PS and PMMA.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Propriétés mécaniques et acoustiques; adhérence, Mechanical and acoustical properties; adhesion, Interfaces solide-fluide, Solid-fluid interfaces, Métal transition Composé, Transition metal Compounds, Metal transición Compuesto, Attaque chimique, Chemical etching, Ataque químico, Composé minéral, Inorganic compound, Compuesto inorgánico, Couche superficielle, Surface layer, Capa superficial, Dislocation, Dislocación, Défaut cristallin, Crystal defect, Defecto cristalino, Emission RX, X ray emission, Emisión RX, Etude expérimentale, Experimental study, Estudio experimental, Faisceau laser, Laser beam, Haz láser, Ferrites, Ferritas, Impureté, Impurity, Impureza, Irradiation, Irradiación, Manganèse Zinc Oxyde Mixte, Manganese Zinc Oxides Mixed, Manganeso Zinc Óxido Mixto, Rétrodiffusion Rutherford, Rutherford backscattering, Retrodifusión Rutherford, Surface, Superficie, Traitement surface, Surface treatment, and Tratamiento superficie

Surface damage induced by laser etching of a Mn-Zn ferrite has been investigated by Rutherford backscattering spectrometry and proton-induced x-ray emission measurements. It is found that laser-induced etching of the Mn-Zn ferrite in both CCl4 gas and H3PO4 could cause surface damage that is much less than that induced by mechanical polishing. The laser-induced surface damage is distributed in a thin surface layer with a thickness of 50 nm.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Carbone, Carbon, Carbono, Composé minéral, Inorganic compound, Compuesto inorgánico, Concentration porteur charge, Charge carrier concentration, Concentración portador carga, Couche mince, Thin film, Capa fina, Diffraction électron réflexion, Reflection high energy electron diffraction, Difracción electrón reflexión, Dopage, Doping, Etude expérimentale, Experimental study, Estudio experimental, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Hydrogénation, Hydrogenation, Hidrogenación, Mobilité porteur charge, Charge carrier mobility, Movilidad portador carga, Mode opératoire, Operating mode, Método operatorio, Plasma, Propriété électrique, Electrical properties, Propiedad eléctrica, Résonance cyclotronique électronique, Electron cyclotron resonance, Resonancia ciclotrónica electrónica, Semiconducteur, Semiconductor materials, Semiconductor(material), Spectrométrie SIMS, Secondary ion mass spectrometry, Espectrometría SIMS, Traitement surface, Surface treatment, and Tratamiento superficie

We report surface cleaning of C-doped p+-GaAs epilayers with hydrogen electron cyclotron resonance plasma. Native oxides on the surface of the p+-GaAs layer can be removed at a very low substrate temperature of 150°C. In addition, carrier concentrations decrease after cleaning at about 300°C, which is attributed to the hydrogenation of carbon acceptors caused by hydrogen plasma exposure. A cleaning temperature of about 400°C, a cleaning time of about 5 min, and microwave power of about 30 W appear to be optimum for the regrowth process.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Doubles couches superficielles, barrières de schottky et travail de sortie, Surface double layers, schottky barriers, and work functions, Attaque chimique, Chemical etching, Ataque químico, Barrière Schottky, Schottky barrier, Barrera Schottky, Caractéristique courant tension, Voltage current curve, Característica corriente tensión, Composé minéral, Inorganic compound, Compuesto inorgánico, Emission photoélectronique, Photoelectron emission, Emisión fotoelectrónica, Etude expérimentale, Experimental study, Estudio experimental, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Passivation, Pasivación, Photoluminescence, Fotoluminiscencia, Rayon X, X ray, Rayos X, Semiconducteur, Semiconductor materials, Semiconductor(material), Sélénium Sulfure, Selenium Sulfides, Selenio Sulfuro, Traitement surface, Surface treatment, and Tratamiento superficie

The chemical and electronic aspects of a GaAs (100) surface passivated by selenium sulfide (SeS2) have been investigated by x-ray photoelectron spectroscopy and photoluminescence. It has been observed that this treatment gives rise to an arsenic selenide (As2Se3) terminated surface. No S-GaAs bonds were observed. The remarkable electronic properties and the formation of the chemically and thermally stable As2Se3 phase reveals the successful passivation. Passivation of GaAs in single step and identification of a single selenium species on the surface are considered to be the major advantages of using SeS2.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Conductivité de surface et phénomènes de porteurs en surface, Surface conductivity and carrier phenomena, Aluminium, Aluminio, Codopage, Codoping, Codrogado, Couche oxyde, Oxide layer, Capa óxido, Effet photovoltaïque, Photovoltaic effect, Efecto fotovoltaico, Etude expérimentale, Experimental study, Estudio experimental, Impureté résiduelle, Residual impurity, Impureza residual, Métal transition, Transition metal, Metal transición, Méthode mesure, Measurement method, Método medida, Pastille électronique, Wafer, Pastilla electrónica, Phosphore, Phosphorus, Fósforo, Semiconducteur, Semiconductor materials, Semiconductor(material), Silicium, Silicon, Silicio, Surface, Superficie, Traitement chimique, Chemical treatment, Tratamiento químico, Traitement surface, Surface treatment, Tratamiento superficie, and Méthode non destructive

Effects of residual metal impurities after RCA (Radio Corporation of America) standard cleaning (alkaline and acid rinses) on the generation of ac surface photovoltages (SPVs) are investigated using n-type silicon wafers. Aluminum (Al) and iron (Fe) in the native oxide induce a negative charge, causing high ac SPVs in n-type wafers. The ac SPV dependency on the concentration of Al and Fe is determined. Nickel and zinc, however, have little effect on the generation of ac SPVs. In commonly employed cleaning processes, Al is the major impurity in the native oxide, and thus the ac SPV technique is applicable to nondestructive diagnostics for quality control in cleaning processes.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Cinétique, Kinetics, Cinética, Couche mince, Thin film, Capa fina, Etude expérimentale, Experimental study, Estudio experimental, Gravure sélective, Selective etching, Grabado selectivo, Magnétron, Magnetron, Magnetrón, Plasma, Polycristal, Polycrystal, Policristal, Rayon X, X ray, Rayos X, Semiconducteur, Semiconductor materials, Semiconductor(material), Silicium IV Oxyde, Silicon IV Oxides, Silicio IV Óxido, Silicium, Silicon, Silicio, Spectre masse, Mass spectrum, Espectro masa, Spectrométrie photoélectron, Photoelectron spectrometry, Espectrometría fotoelectrón, Température, Temperature, Temperatura, Traitement surface, Surface treatment, and Tratamiento superficie

A mechanism for highly selective etching of phosphorus-doped polycrystalline silicon (n+ poly-Si) on SiO2 by employing a Cl2 magnetron plasma reactor at low wafer temperatures was investigated. Only the SiO2 etch rate drops rapidly in the magnetron plasma at low wafer temperatures below 0°C. X-ray photoelectron spectroscopy analysis revealed that only the SiO2 surface etched at lower temperatures was covered with silicon chloride or/and oxychloride compounds. The highly dense magnetron plasma decomposes the etched products into unsaturated molecules such as SiCl, SiCl2, and their oxides.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Attaque chimique, Chemical etching, Ataque químico, Ellipsométrie, Ellipsometry, Elipsometría, Etude expérimentale, Experimental study, Estudio experimental, Face cristalline, Crystal face, Cara cristal, Figure attaque, Etch pit, Figura ataque, Gradin, Step, Peldaño, Microscopie optique, Optical microscopy, Microscopía óptica, Semiconducteur, Semiconductor materials, Semiconductor(material), Silicium, Silicon, Silicio, Traitement surface, Surface treatment, and Tratamiento superficie

Spectroscopic ellipsometry has been used to study HF- and NH4OH-treated (111)Si surfaces. The ellipsometric data indicate that aqueous HF etching results in the removal of the surface oxide and leaves behind Si surfaces terminated by atomic hydrogen. Chemical treatment by aqueous NH4OH solution provides a bare Si surface, but further etching of Si leads to roughening of the sample surfaces. Both the HF- and NH4OH-treated surfaces become hydrophobic as the surface is hydrogen-terminated (HF) or the surface oxide layer is etched completely away (NH4OH).

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Dynamique et vibrations de surface et d'interface, Surface and interface dynamics and vibrations, Structure et morphologie de couches minces, Thin film structure and morphology, Composé minéral, Inorganic compound, Compuesto inorgánico, Condensation faisceau moléculaire, Molecular beam condensation, Condensación haz molecular, Couche mince, Thin film, Capa fina, Diffraction RX, X ray diffraction, Difracción RX, Diffraction électron réflexion, Reflection high energy electron diffraction, Difracción electrón reflexión, Dislocation, Dislocación, Etude expérimentale, Experimental study, Estudio experimental, Face cristalline, Crystal face, Cara cristal, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Magnésium Oxyde, Magnesium Oxides, Magnesio Óxido, Microscopie électronique transmission, Transmission electron microscopy, Microscopía electrónica transmisión, Méthode phase vapeur, Growth from vapor, Método fase vapor, Orientation préférentielle, Preferred orientation, Orientación preferencial, Reconstruction surface, Surface reconstruction, Reconstrucción superficie, Semiconducteur, Semiconductor materials, Semiconductor(material), Support, Soporte, Traitement surface, Surface treatment, and Tratamiento superficie

The effects of substrate preparation on the structure and orientation of MgO films grown on (001) GaAs using pulsed laser deposition has been investigated. Textured MgO films displaying a (111)MgO∥ (001)GaAs orientation relation with x-ray rocking curve full width at half minimum (FWHM) values as low as 1. 8° were obtained in cases where the native GaAs surface oxide was only partially desorbed prior to growth. Reflection high-energy electron diffraction, transmission electron microscopy (TEM), and x-ray pole figure analysis of these films reveals a preferential orientation within the plane of the substrate: [110]MgO∥ [110]GaAs and [112]MgO∥ [110]GaAs.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Dépôt sous vide, Vacuum deposition, Composé minéral, Inorganic compound, Compuesto inorgánico, Couche mince, Thin film, Capa fina, Croissance cristalline, Crystal growth, Crecimiento cristalino, Diffraction électron, Electron diffraction, Difracción electrónica, Epitaxie, Epitaxy, Epitaxia, Etude expérimentale, Experimental study, Estudio experimental, Faisceau atomique, Atomic beam, Haz atómico, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Morphologie, Morphology, Morfología, Nettoyage chimique, Chemical cleaning, Limpieza química, Nettoyage surface, Surface cleaning, Limpieza superficie, Réflectivité, Reflectivity, Reflectividad, Semiconducteur, Semiconductor materials, Semiconductor(material), Support, Soporte, Traitement surface, Surface treatment, Tratamiento superficie, Traitement thermique, Heat treatment, Tratamiento térmico, and Support GaAs

In situ GaAs surface cleaning prior to molecular beam epitaxy using a combined thermal/ H-atom treatment, the H-atom flux being derived from a rf (13.56 MHz) plasma discharge, hydrogen free-radical source, has been compared and contrasted to conventional thermal treatment of GaAs surfaces. Surface quality, i.e, morphology, was monitored in situ in real time using conventional reflection high-energy electron diffraction and a diffuse optical reflectivity technique employed simultaneously. GaAs surfaces were found to clean readily at temperatures below 400°C using the combined thermal/H-atom treatment as opposed to the conventional thermal treatment, which requires temperatures in the vicinity of 600°C.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Dynamique et vibrations de surface et d'interface, Surface and interface dynamics and vibrations, Structure et morphologie de couches minces, Thin film structure and morphology, Métal transition, Transition metal, Metal transición, Aluminium, Aluminio, Cinétique, Kinetics, Cinética, Couche mince, Thin film, Capa fina, Diélectrique, Dielectric materials, Dieléctrico, Dépôt chimique phase vapeur, Chemical vapor deposition, Depósito químico fase vapor, Etude expérimentale, Experimental study, Estudio experimental, Gradin, Step, Peldaño, Image réticulaire, Lattice image, Imagen reticular, Microscopie électronique balayage, Scanning electron microscopy, Microscopía electrónica barrido, Mode opératoire, Operating mode, Método operatorio, Méthode phase vapeur, Growth from vapor, Método fase vapor, Résonance cyclotronique électronique, Electron cyclotron resonance, Resonancia ciclotrónica electrónica, Rétrodiffusion Rutherford, Rutherford backscattering, Retrodifusión Rutherford, Silicium IV Oxyde, Silicon IV Oxides, Silicio IV Óxido, Spectrométrie Auger, Auger electron spectrometry, Espectrometría Auger, Traitement surface, Surface treatment, and Tratamiento superficie

Results of the dielectric oxide films deposited at 300°C using tetramethylcyclotetrasiloxane/oxygen chemistry in a reactor with electron cyclotron resonance microwave discharge are presented. We have found that quality oxide is deposited with an O2/tetramethylcyclotetrasiloxane flow-rate ratio of greater than 3. The properties of the deposited films are characterized by prism coupler, infrared spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, and triangular voltage sweep measurements.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Métal transition Composé, Transition metal Compounds, Metal transición Compuesto, Attaque chimique, Chemical etching, Ataque químico, Chemisches Aetzen, Composition chimique, Chemical composition, Composición química, Chemische Zusammensetzung, Contact électrique, Electric contact, Contacto eléctrico, Elektrischer Kontakt, Etude expérimentale, Experimental study, Estudio experimental, Experimentelle Untersuchung, Fluor, Fluorine, Impureté, Impurity, Impureza, Begleitelement, Interstitiel, Interstitial, Intersticial, Zwischengitteratom, Irradiation, Irradiación, Bestrahlung, Oxydation, Oxidation, Oxidación, Plasma, Rayon X, X ray, Rayos X, Roentgenstrahlen, Recuit, Annealing, Recocido, Gluehen, Résonance cyclotronique électronique, Electron cyclotron resonance, Resonancia ciclotrónica electrónica, Silicium, Silicon, Silicio, Spectrométrie photoélectron, Photoelectron spectrometry, Espectrometría fotoelectrón, ESCA Spektrometrie, Titane Nitrure, Titanium Nitrides, Titanio Nitruro, Titane Siliciure, Titanium Silicides, Titanio Siliciuro, Titane, Titanium, Titanio, Titan, Traitement surface, Surface treatment, Tratamiento superficie, and Oberflaechenbehandlung

The removal of native silicon oxide on <100> silicon with an electron cyclotron resonance (ECR) excited NF3 plasma is demonstrated. In situ x-ray photoemission spectroscopy verifies removal of the oxide and shows that a residue remains on the surface after exposure to the plasma. The residue is about 1.2 nm thick with the approximate formula Si6F8ON2 when analyzed with a uniform overlayer model. X-ray photoemission spectra of the residue show fluorine and oxygen in at least two different bonding states and a unique nitrogen having a diamagnetic bond.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Propriétés mécaniques et acoustiques; adhérence, Mechanical and acoustical properties; adhesion, Interfaces solide-fluide, Solid-fluid interfaces, Composé minéral, Inorganic compound, Compuesto inorgánico, Diffraction RX, X ray diffraction, Difracción RX, Diffusion en diffraction, Diffuse scattering, Difusión en difracción, Etude expérimentale, Experimental study, Estudio experimental, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Haute résolution, High resolution, Alta resolucion, Polissage chimique, Chemical polishing, Pulido químico, Polissage mécanique, Mechanical polishing, Pulido mecánico, Semiconducteur, Semiconductor materials, Semiconductor(material), Surface, Superficie, Traitement surface, Surface treatment, and Tratamiento superficie

High-resolution triple crystal x-ray diffraction has been used to monitor the magnitude of diffuse scattering from chemical-mechanical (CM) polished GaAs. The diffuse scattering, which is attributed to kinematic scattering arising from polish-induced crystallographic defects, was found to be only slightly affected when each of four CM polish parameters (bromine concentration in Br2/methanol, total polish time, polish pad rotation speed, and force on sample) was varied individually.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Ablation, Ablación, Commande température, Temperature control, Control temperatura, Couche mince, Thin film, Capa fina, Imide polymère, Polyimide, Imida polímero, Traitement surface, Surface treatment, and Tratamiento superficie

The temperature at the interface between a thin polyimide film and a quartz substrate was monitored as a function of time during KrF (248 nm) laser-induced heating and ablation using thin film NiSi thermistors. These experimental temperature measurements were coupled with heat flow simulations to obtain time-resolved temperature profiles in the polyimide. Thermal properties of the polyimide were estimated by requiring that the simulations reproduce experimental temperature profiles.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Dynamique et vibrations de surface et d'interface, Surface and interface dynamics and vibrations, Structure et morphologie de couches minces, Thin film structure and morphology, Composé minéral, Inorganic compound, Compuesto inorgánico, Concentration porteur charge, Charge carrier concentration, Concentración portador carga, Croissance cristalline, Crystal growth, Crecimiento cristalino, Etude expérimentale, Experimental study, Estudio experimental, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Implantation ion, Ion implantation, Implantación ión, Oxydation, Oxidation, Oxidación, Pastille électronique, Wafer, Pastilla electrónica, Plasma, Recuit thermique rapide, Rapid thermal annealing, Recocido térmico rápido, Semiconducteur, Semiconductor materials, Semiconductor(material), Silicium Nitrure, Silicon Nitrides, Silicio Nitruro, Silicium, Silicon, Silicio, Spectrométrie photoélectron, Photoelectron spectrometry, Espectrometría fotoelectrón, Traitement surface, Surface treatment, Tratamiento superficie, Résistance couche, and Sheet resistance

We have investigated the effect of oxygen plasma treatment on GaAs surface prior to plasma enhanced chemical vapor deposition of silicon nitride cap on the activation efficiency of implanted Si in GaAs. The oxygen plasma treatment improved the activation efficiency by ∼35% over (1:10) NH4OH:H2O treatment. In addition, the oxygen plasma treated samples had uniform sheet resistance across the wafer with minimum wafer-to-wafer variations.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Propriétés mécaniques et acoustiques; adhérence, Mechanical and acoustical properties; adhesion, Interfaces solide-fluide, Solid-fluid interfaces, Composé minéral, Inorganic compound, Compuesto inorgánico, Contamination, Contaminación, Etude expérimentale, Experimental study, Estudio experimental, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Indium Phosphure, Indium Phosphides, Indio Fosfuro, Masquage, Masking, Enmascaramiento, Morphologie, Morphology, Morfología, Polymère, Polymer, Polímero, Semiconducteur, Semiconductor materials, Semiconductor(material), Spectrométrie masse, Mass spectrometry, Espectrometría masa, Traitement surface, Surface treatment, and Tratamiento superficie

Reactive ion etching of InP using a C2H6/O2 mixture was investigated. The effects of oxygen gas added to a C2H6/H2 gas were systematically investigated. A very smooth etched surface was obtained by the addition of O2, even when the etching depth was 3.5 μm. Mass spectrum of the gases in the etching chamber was also investigated during etching. It was found that the O2 gas reduced the formation of hydrocarbon polymers in the etching process.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Métal transition, Transition metal, Metal transición, Uebergangsmetalle, Aluminium, Aluminio, Cinétique, Kinetics, Cinética, Kinetik, Equation Boltzmann, Boltzmann equation, Ecuación Boltzmann, Etude théorique, Theoretical study, Estudio teórico, Theoretische Untersuchung, Gradin, Step, Peldaño, Stufe, Gravure faisceau ionique, Ion beam etching, Grabado haz iónico, Gravure plasma, Plasma etching, Grabado plasma, Mécanisme réaction, Reaction mechanism, Mecanismo reacción, Traitement surface, Surface treatment, Tratamiento superficie, and Oberflaechenbehandlung

A numerical model based on the Boltzmann equation is proposed to simulate the physical etching by energetic particles in the sheath region of the discharge. The local profiles of the two-dimensional velocity distributions of ions and fast neutrals in the gas phase are calculated in a radially uniform discharge, under a set of collision cross sections, for external parameters: sheath voltage and width, ion current density, and pressure. A case study is performed in a dc abnormal glow discharge in Ar having a masked Al electrode.