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Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Lithography, masks and pattern transfer, Composé minéral, Inorganic compounds, Non métal, Nonmetals, Chimie plasma, Plasma chemistry, Química plasma, Cinétique, Kinetics, Etude expérimentale, Experimental study, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Gravure sélective, Selective etching, Grabado selectivo, Matériau semiconducteur, Semiconductor materials, Mécanisme réaction, Reaction mechanism, Mecanismo reacción, Silicium oxyde, Silicon oxides, Silicium, Silicon, Traitement surface, Surface treatments, O Si, Si, and SiO2

Water vapor added to NF3 plasma during reactive ion etching controls the ratio of the etch rates of SiO2 and Si. Selectivity rises from a value of 0. 14 at water-free 100% NF3 to 1.99 for an initial gas composition of 35% H2O-65% NF3. The results of mass and energy analysis of the plasma yield a basis for discussing the mechanisms which effect the selectivity. The NF3/H2O plasma removes native oxides from Si surfaces.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Transport électronique dans des structures à interface, Electronic transport in interface structures, Résistance de contact, potentiel de contact, Contact resistance, contact potential, Effet tunnel, Tunneling, Contacts métal-non métal, Metal-nonmetal contacts, Composé minéral, Inorganic compounds, Métal transition, Transition elements, Caractéristique courant tension, IV characteristic, Composé binaire, Binary compounds, Composé ternaire, Ternary compounds, Conductivité électrique, Electric conductivity, Contact électrique, Electric contacts, Densité porteur charge, Carrier density, Dépendance température, Temperature dependence, Effet tunnel, Tunnel effect, Etude expérimentale, Experimental study, Faisceau ion, Ion beams, Gallium arséniure, Gallium arsenides, Indium arséniure, Indium arsenides, Matériau dopé, Doped materials, Matériau semiconducteur, Semiconductor materials, Or, Gold, Platine, Platinum, Recuit, Annealing, Titane, Titanium, Traitement surface, Surface treatments, As Ga In, As In, Au, InAs, InGaAs, Pt, and Ti

Extremely low resistance nonalloyed Ti/Pt/Au contacts have been formed to n-InGaAs, p-InGaAs, and n-InAs/InGaAs layers with doping concentrations ranging from I to 5×10-9 cm-3 for n-type and from 2 to 1×1020 cm-3 for p-type material. The comparative studies reveal specific contact resistances as low as 1.7×10-8 Ω cm2 for the n-InAs/InGaAs system, while the best values obtained for n-InGaAs and p-InGaAs are 4.3 and 4.8×10-8 Ω cm2, respectively.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés et matériaux diélectriques, piézoélectriques et ferroélectriques, Dielectrics, piezoelectrics, and ferroelectrics and their properties, Propriétés diélectriques des solides et des liquides, Dielectric properties of solids and liquids, Polarisation et dépolarisation, Polarization and depolarization, Composé minéral, Inorganic compounds, Courant décharge, Discharge current, Corriente descarga, Courant thermostimulé, Thermally stimulated currents, Densité charge, Charge density, Décharge couronne, Corona discharges, Dépendance température, Temperature dependence, Electret, Electrets, Energie activation, Activation energy, Etude expérimentale, Experimental study, Faisceau électron, Electron beams, Piégeage, Trapping, Silicium oxyde, Silicon oxides, Traitement surface, Surface treatments, Vieillissement, Aging, O Si, and SiO2

The transport mechanism of detrapped charges was investigated in thermally wet grown SiO2 electrets, which were first charged by the corona method or by electron-beam irradiation and then aged at different temperatures. The discharge and retrapping behavior was analyzed with a recently suggested method for determination of the charge centroid and charge density and by measuring open-circuit termally stimulated discharge current spectra. Thus, the thermal activation process could be compared with the local redistribution and the decay of the trapped charges. It was found that the fast retrapping effect plays the dominant role for the released negative charge carriers. For positive charge carriers, however, this could not be confirmed.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Physicochimie des polymeres, Physicochemistry of polymers, Polymères organiques, Organic polymers, Propriétés et caractérisation, Properties and characterization, Propriétés de surface, Surface properties, Aluminisation, Aluminizing, Aluminizacion, Aluminium, Aluminio, Ethylène téréphtalate polymère, Ethylene terephthalate polymer, Etileno tereftalato polímero, Interface, Interfase, Rétrodiffusion Rutherford, Rutherford backscattering, Retrodifusión Rutherford, Traitement surface, Surface treatment, and Tratamiento superficie

In the present work, the carbon-to-oxygen ratio of Mylar (in the form of aluminized Mylar) and the aluminum-Mylar interface character have been studied using a proton elastic backscattering method at five different incident energies ranging from 1.67 to 3.74 MeV. Using the available proton elastic scattering cross-section data of C and O, a proton backscattered spectrum of Mylar for a proton energy of 1.67 MeV was simulated. Best fitting of the simulated spectrum was achieved for a bulk carbon-to-oxygen ratio of 2.39±0.06 and a linearly varying ratio between 1.63 and 2.39 at the aluminum-Mylar interface region. The richness of oxygen at the interface region is attributed to stronger binding of aluminum with oxygen.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.), Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.), Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.), Non métal, Nonmetals, CVD, Croissance cristalline, Crystal growth, Diamant, Diamonds, Etude expérimentale, Experimental study, Fil chaud, Hot wire, Hilo caliente, Film, Films, Prétraitement, Pretreatment, Pretratamiento, Substrat, Substrates, Texture, Traitement surface, Surface treatments, C, Densité germination, and Nucleation density

Diamond was deposited on Si(111) substrates by a two-step hot-filament chemical-vapor deposition method consisting of the pretreatment and growth processes. In the pretreatment process, the substrate was heated at 1473 K briefly in a C3H6-CH4-H2 mixture gas. Textured (111)-oriented diamond films were obtained with nucleation density of 109 cm-2. SiC grains were formed along with the nucleation sites for diamond in the present pretreatment process. Diamond was not deposited on the SiC layer, which was intentionally formed on a Si substrate, using the present growth process.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Non métal, Nonmetals, Défaut cristallin, Crystal defects, Défaut surface, Surface defect, Defecto superficie, Etude expérimentale, Experimental study, Gravure plasma, Plasma etching, Grabado plasma, Matériau semiconducteur, Semiconductor materials, Onde hélicon, Helicon waves, Silicium, Silicon, Tension polarisation, Bias voltage, Voltage polarización, Traitement surface, Surface treatments, and Si

Damage formed on silicon by helicon wave oxygen plasma is studied. The damage density decreases from 1.9×1016 to 9.3×1015/cm2 with an increase of helicon wave power from 0.5 to, 2.0 kW in the exposure for 5 min at a rf bias power density of 0.45 W/cm2 at 1.6 MHz. This decrease is mainly due to the rapid decrease of self-bias voltage Vdc, with these power and ion current increases. This damage density variation is much different from those in other kinds of etching, such as, in an electron cyclotron resonance plasma etching. However, the damage density increases with a bias power increase. Lower damage etching, therefore, can be achieved when high helicon wave and low bias powers are supplied.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Propriétés optiques des matériaux massifs et des couches minces, Optical properties of bulk materials and thin films, Constantes optiques: indice de réfraction; constante diélectrique complexe; coefficients d'absorption, de réflexion et de transmission; émissivité, Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity, Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity), Composé minéral, Inorganic compounds, Métal transition composé, Transition element compounds, Cadmium tellurure, Cadmium tellurides, Ellipsométrie, Ellipsometry, Etude expérimentale, Experimental study, Facteur absorption, Absorptivity, Facteur réflexion, Reflectivity, Fonction diélectrique, Dielectric function, Indice réfraction, Refractive index, Matériau semiconducteur, Semiconductor materials, Traitement surface, Surface treatments, Cd Te, and CdTe

The optical response of CdTe in the 1.1-5.6 eV photon-energy range at room temperature has been studied by spectroscopic ellipsometry. The measured f(E) data reveal distinct structures at energies of the E0, E1, E1+Δ1, and E2 critical points. These data are analyzed using various theoretical models, namely the model dielectric function (MDF), harmonic-oscillator approximation (HOA), and standard critical-point (SCP) model. Results are in satisfactory agreement with the MDF calculations over the entire range of the photon energies. The HOA (five oscillators) cannot successfully explain the peculiar experimental E(E) data.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Etats électroniques de surface et d'interface, Surface and interface electron states, Excitations collectives (incluant excitons, polarons, plasmons et autres excitations de densité de charge), Collective excitations (including excitons, polarons, plasmons and other charge-density excitations), Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Photoluminescence, Semiconducteurs iii-v, Iii-v semiconductors, Propriétés optiques des couches minces, Optical properties of specific thin films, Collective excitations (including plasmons and other charge-density excitations), III-V semiconductors, Composé minéral, Inorganic compounds, Aluminium arséniure, Aluminium arsenides, Composé binaire, Binary compounds, Composé ternaire, Ternary compounds, Couplage électron phonon, Electron-phonon coupling, Diffusion résonnante, Resonance scattering, Effet Raman, Raman effect, Etat localisé, Localized states, Etude expérimentale, Experimental study, Exciton, Excitons, Gallium arséniure, Gallium arsenides, Matériau semiconducteur, Semiconductor materials, Photoluminescence, Point quantique, Quantum dots, Porteur chaud, Hot carriers, Processus n phonons, Multi-phonon processes, Traitement surface, Surface treatments, Al As Ga, Al0,3Ga0,7As, As Ga, Confinement quantique, Quantum confinement, and GaAs

We report resonant Raman scattering (RRS) and «hot» exciton luminescence (HEL) from dry etched GaAs-AlGaAs quantum dots in which quantum confinement effects have been found with decreasing dot sizes. Up to fourth-order multiphonon processes have also been observed for the first time via photoluminescence and photoluminescence excitation in quantum dots. These results are direct evidence of the bottleneck effect. Hot carriers are maintained due to the slowed-down electron-phonon scattering in one- and zero-dimensional semiconductors. The competition between resonant relaxation via LO phonons and sidewall nonradiative recombination results in stronger multiphonon processes with increasing quantum confinement.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Spectres dans l'infrarouge et diffusion raman, Infrared and raman spectra and scattering, Autres composés minéraux non métalliques, Other nonmetallic inorganics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Non métal, Nonmetals, Analyse non destructive, Nondestructive analysis, Etat natif, Native state, Estado nativo, Etude expérimentale, Experimental study, Liaison disponible, Dangling bonds, Matériau semiconducteur, Semiconductor materials, Nettoyage, Cleaning, Oxydation, Oxidation, Pastille électronique, Wafers, Rinçage, Washout, Réflexion interne multiple, Multiple internal reflection, Reflexión interna múltiple, Silicium, Silicon, Spectre IR, Infrared spectra, Surface, Surfaces, Traitement surface, Surface treatments, Vieillissement, Aging, and Si

It is demonstrated that the multiple internal reflection infrared (IR) spectroscopy using a germanium prism is a very powerful nondestructive diagnostic technique for the study of silicon wafer surfaces in a wide range of IR irradiation region. The technique limits neither the shape of samples nor the IR range due to the absorption by silicon itself. With this technique, it is demonstrated that; (i) dangling bonds of a silicon surface treated with HF solution and de-ionized (DI) water are terminated mostly with H atoms, (ii) native oxide growth is enhanced by DI water rinsing, and the interstitial oxygen concentration in the silicon surface region increases during native oxide growth process, and (iii) DI water rinsing after HF etching replaces Si-F bonds with Si-H and Si-OH bonds on a silicon surface.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Ablation, Ablación, Absorption optique, Optical absorption, Absorción óptica, Conductivité électrique, Electrical conductivity, Conductividad eléctrica, Imide polymère, Polyimide, Imida polímero, Irradiation proton, Proton irradiation, Irradiación protón, Traitement surface, Surface treatment, and Tratamiento superficie

High intensity proton pulses of 50 ns length were used to modify polyimide surfaces. The deposited energy and power density were similar to the corresponding experiments with UV laser pulses. Due to the constant range of the protons a well-defined layer of about 1.5 μm is heated. The induced optical absorption, electrical conductivity, and the ablation were studied. The results are consistently explained by a thermal model.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Interactions dans les plasmas (non laser), Plasma interactions (nonlaser), Interaction du plasma avec les parois ; effets de couche limite, Plasma-wall interactions; boundary layer effects, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Plasma-wall interactions; boundary layer effects; plasma sheaths, Cylindre, Cylinders, Etude théorique, Theoretical study, Gaine plasma, Plasma sheath, Implantation ion, Ion implantation, Rayon, Radii, Traitement surface, and Surface treatments

The potential structure, electric field, and sheath width for the ion-matrix sheath in a cylindrical bore are calculated. The appropriate scaling length for this problem is found to be √2 times larger than the planar ion matrix sheath width. If the radius of the bore is less than this scaling length, then the sheaths from «opposite» sides of the bore overlap, and the potential drop from the axis to the sidewalls decreases with the square of the bore radius. This limits the maximum energy of ions impacting the target. For bores larger than this scaling length, the asymptotic planar solutions are rapidly approached.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Epitaxie par faisceaux chimiques, ioniques, atomiques et moléculaires, Molecular, atomic, ion, and chemical beam epitaxy, Composé minéral, Inorganic compounds, Composé binaire, Binary compounds, Couche mince, Thin films, Croissance cristalline, Crystal growth, Epitaxie jet moléculaire, Molecular beam epitaxy, Etude expérimentale, Experimental study, Gallium nitrure, Gallium nitrides, Hétéroépitaxie, Heteroepitaxy, Heteroepitaxia, Matériau semiconducteur, Semiconductor materials, Plasma, Résonance cyclotronique électronique, Electron cyclotron-resonance, Substrat, Substrates, Traitement surface, Surface treatments, Ga N, GaN, and Substrat saphir

GaN films were grown on the c-plane of sapphire substrates by plasma-enhanced molecular beam epitaxy equipped with an electron-cyclotron resonance (ECR) source. Sapphire substrates were cleaned by a hydrogen plasma treatment, obviating the need for perilous elevated temperatures. ECR sources are plagued with high energetic ions, particularly at high microwave power levels, where they cause damage in the growing films. To circumvent this problem, we systematically optimized the growth conditions and other pertinent parameters for optimum layer quality. Among the parameters optimized were the magnetic field strength, microwave power, nitrogen over-pressure, and growth temperature.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Autres propriétés non électroniques, Other nonelectronic properties, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Composé minéral, Inorganic compounds, Ablation, Conductivité électrique, Electric conductivity, Couche mince, Thin films, Etain oxyde, Tin oxides, Etude expérimentale, Experimental study, Facteur transmission, Transmittance, Factor transmisión, Laser excimère, Excimer lasers, Propriété optique, Optical properties, Rayonnement laser, Laser radiation, Surface, Surfaces, Traitement surface, Surface treatments, O Sn, and SnO2

Results are presented on the processing of tin oxide films using an excimer laser. Commercially available films of SnO2 deposited on glass substrates were treated using a KrF excimer laser (248 nm). The results of these treatments were characterized by normal optical absorption, transmittance, and reflectance measurements in the VIS-NIR region along with x-ray diffraction and electrical conductivity measurements and a scanning electron microscopy (SEM) study. These were compared to the nontreated samples. The results inferred a relation between the amount of photoablated material with laser fluence, up to saturation. The optical spectroscopy results and the SEM study evidence modifications of the treated surface.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Ablation, Ablación, Ethylène(tétrafluoro) polymère, Tetrafluoroethylene polymer, Etileno(tetrafluoro) polímero, Imide polymère, Polyimide, Imida polímero, Laser, Polymère dopé, Doped polymer, Polímero dopado, Traitement surface, Surface treatment, and Tratamiento superficie

Experimental data on the 248 and 308 nm wavelength excimer laser ablation at poly (tetrafluoroethylene) doped with polymide (PI) are reported for a range of fluences and dopant concentrations. Threshold fluences were determined and a correlation was obtained between the dopant concentration and the threshold fluence. The threshold fluences and the limiting etch rates at high fluences decreased with increasing dopant concentration, and there is a minimum dopant concentration below which there is no ablation at both of the wavelengths. The side wall taper of the ablated holes increased with increasing dopant concentration. At subthreshold fluences, the polymer surface was modified with selective removal of PI from the polymer blend.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Lithography, masks and pattern transfer, Non métal, Nonmetals, Contamination, Effet température, Temperature effects, Energie, Energy, Etat natif, Native state, Estado nativo, Etude expérimentale, Experimental study, Hydrogène ion, Hydrogen ions, Matériau semiconducteur, Semiconductor materials, Nettoyage surface, Surface cleaning, Oxydation, Oxidation, Plasma, Résonance cyclotronique électronique, Electron cyclotron-resonance, Silicium, Silicon, Traitement surface, Surface treatments, and Si

Effects of the substrate temperature and ion incident energy on silicon surface cleaning and hydrogen penetration caused by irradiation with a hydrogen plasma have been investigated using x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. A silicon native oxide and a hydrocarbon-contaminated layer were removed only on the condition that the silicon substrate was struck with hydrogen ions having proper kinetic energies of less than 40 eV at temperatures from room temperature to 400°C. However, the silicon oxide grew either at temperatures below room temperature or at no ion incidence onto the substrate. This oxidation phenomenon was attributed to residual H2O in the vacuum system. On the other hand, hydrogen penetration occurred only on the condition of hydrogen ion bombardment.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Caractéristique électrique, Electrical characteristic, Característica eléctrica, Composé III-V, III-V compound, Compuesto III-V, Composé binaire, Binary compound, Compuesto binario, Composé ternaire, Ternary compound, Compuesto ternario, Etude expérimentale, Experimental study, Estudio experimental, Gallium Arséniure, Gallium Arsenides, Galio Arseniuro, Indium Arséniure, Indium Arsenides, Indio Arseniuro, Indium Phosphure, Indium Phosphides, Indio Fosfuro, Passivation, Pasivación, Processus fabrication, Production process, Proceso fabricación, Silicium Nitrure, Silicon Nitrides, Silicio Nitruro, Technologie bipolaire, Bipolar technology, Tecnología bipolar, Traitement surface, Surface treatment, Tratamiento superficie, Transistor hétérojonction, Heterojunction transistor, Transistor heterounión, As Ga In, In P, InGaAs, InP, N Si, and SiN

The effects of the SiN layer normally used to passivate and protect the exposed junction surfaces in InP/InGaAs heterojunction bipolar transistors have been studied and shown to degrade the transistor properties. These effects are ascribed primarily to surface damage associated with the high SiN deposition temperature (350°C). A degradation of the emitter-base properties was observed through the nonideal behavior of the base current and the measured short minority-carrier lifetime in the base, extracted by using the base width modulation method. Degradation in the current gain and emitter injection efficiency was also observed.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Industrie des polymeres, peintures, bois, Polymer industry, paints, wood, Technologie des polymères, Technology of polymers, Appareillage et mise en oeuvre, Machinery and processing, Matières plastiques, Plastics, Revêtement, métallisation, coloration, Coating, metallization, dyeing, Analyse surface, Surface analysis, Análisis superficie, Electrisation, Electrostatic electrification, Electrización, Etude expérimentale, Experimental study, Estudio experimental, Mécanisme, Mechanism, Mecanismo, Méthacrylate de méthyle polymère, Methyl methacrylate polymer, Metacrilato de metilo polímero, Plasma, Poudre, Powder, Polvo, Propriété triboélectrique, Triboelectric properties, Propiedad triboeléctrica, Styrène polymère, Styrene polymer, Estireno polímero, Traitement surface, Surface treatment, and Tratamiento superficie

Surfaces of fine polystyrene (PS) and polymethyl methacrylate (PMMA) powders were modified by exposure to the downstream products of a nitrogen or oxygen microwave plasma. After nitrogen plasma treatment, the XPS C 1s peak shapes suggested the formation of amines in the case of PS, and the formation of imines and amides in the case of PMMA. Oxygen plasma treatment appears to result in the formation of hydroxyl and carbonyl groups on the surfaces of both PS and PMMA.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Composition; défauts et impuretés, Composition; defects and impurities, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Transport électronique, Electronic transport in condensed matter, Phénomènes de conductivité dans les semiconducteurs et les isolants, Conductivity phenomena in semiconductors and insulators, Porteurs de charges: génération, recombinaison, durée de vie et piégeage, Charge carriers: generation, recombination, lifetime, and trapping, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Transport électronique dans des structures à interface, Electronic transport in interface structures, Contacts métal-non métal, Metal-nonmetal contacts, Composé minéral, Inorganic compounds, AES, Conductivité électrique, Electric conductivity, Contact ohmique, Ohmic contacts, Densité porteur charge, Carrier density, Diffusion(transport), Diffusion, Dopage cristal, Crystal doping, Etude expérimentale, Experimental study, Gallium arséniure, Gallium arsenides, Matériau semiconducteur, Semiconductor materials, Plasma, Rayon X, X radiation, Recuit, Annealing, Revêtement, Coatings, Spectrométrie photoélectron, Photoelectron spectroscopy, Traitement surface, Surface treatments, As Ga, GaAs, Résistance couche, and Sheet resistance

We propose a new method of making heavily doped n-type GaAs to a very shallow depth using sulfur hexafluoride (Sf6) plasma treatment of the GaAs surface. Semi-insulating GaAs substrate implanted with Si was exposed to a sulfur containing SF6 plasma and capped with silicon nitride anneal cap. During a subsequent anneal step at an elevated temperature to electrically activate the implanted Si, the sulfur diffused into GaAs to a shallow depth of ∼600 A resulting in further enhancement of net carrier concentration. With this technique the carrier concentration near the surface region was almost doubled compared to samples with Si implantation only.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Algorithme, Algorithms, Choc, Shock, Choque, Entropie, Entropy, Equation Hamilton Jacobi, Hamilton-Jacobi equations, Etude théorique, Theoretical study, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Surface, Surfaces, Traitement surface, and Surface treatments

A new algorithm that determines the evolution of a surface eroding under reactive-ion etching is presented. The surface motion is governed by both the Hamilton-Jacobi equation and the entropy condition for a given etch rate. The trajectories of «shocks» and «rarefaction waves» are then directly tracked, and thus this method may be regarded as a generalization of the method of characteristics. This allows slope discontinuities to be accurately calculated without artificial diffusion. The algorithm is compared with «geometric» surface evolution methods, such as the line-segment method.

Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Composition; défauts et impuretés, Composition; defects and impurities, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Photoluminescence, Autres matériaux minéraux solides, Other solid inorganic materials, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitement des matériaux et son effet sur la microstructure et les propriétés, Treatment of materials and its effects on microstructure and properties, Propriétés optiques et diélectriques (liées aux conditions de traitement), Optical and dielectric properties (related to treatment conditions), Addition bore, Boron additions, Défaut, Defects, Effet champ magnétique, Magnetic field effects, Etude expérimentale, Experimental study, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Matériau dopé, Doped materials, Matériau semiconducteur, Semiconductor materials, Photoluminescence, Silicium, Silicon, Traitement surface, Surface treatments, and Si

The impact of reactive-ion-etching (RtE) on the near-surface crystal quality of Czochralski silicon has been studied by photoluminescence spectroscopy. The presence of carbon-related defects is investigated as a function of the pressure during CF4 RIE. The effects of adding hydrogen to the plasma as well as the time of treatment are studied and discussed in terms of defect formation and etch rate. Photoluminescence spectra of samples recorded after a magnetically enhanced reactive-ion-etching process are also presented. The introduction of defects depending on the self-bias voltage and the etch rate are investigated for different magnetic fields.