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Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Surface cleaning, etching, patterning, Non métal, Nonmetals, Addition cuivre, Copper additions, Décontamination, Decontamination, Etude expérimentale, Experimental study, Fluorescence RX, X ray fluorescence, Fluorescencia RX, Hydrogène, Hydrogen, Impureté, Impurities, Matériau semiconducteur, Semiconductor materials, Microscopie force atomique, Atomic force microscopy, Nettoyage surface, Surface cleaning, Plasma, Rugosité, Roughness, Silicium, Silicon, Substrat, Substrates, Traitement surface, Surface treatments, and Si

The removal of Cu impurities on Si substrate was investigated by using remote H-plasma treatments This work focussed on eliminating Cu impurities on Si substrate which was intentionally contaminated by dipping it into 1 ppm CuCl2 chemical standard solution. Remote H-plasma treatments were conducted to remove Cu impurities and depended on the plasma exposure times and distances. After the remote H-plasma treatments, Si surfaces were analyzed by TXRF (total reflection X-ray fluorescence) and AFM (atomic force microscope). The Cu concentration was reduced more than a factor of 10-100 and its surface roughness improved significantly after the remote H-plasma treatments. Cu2+ ions can be reduced in the form of Cu element and formed as the compound (Cu(OH)2) and the chemical oxides (SiO and SiO2) on the Si substrate. Under the condition of remote H-plasma, the removal mechanism of Cu impurities is studied and understood by applying the formation mechanism of volatile by-products such as CuHx-, CuO-, SiO-and H2O-, and the lift-off phenomena during the removal of underlying oxides such as SiO and SiO2.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Surface cleaning, etching, patterning, Composé minéral, Inorganic compounds, Attaque chimique, Chemical etching, Ataque químico, Composé binaire, Binary compounds, Ellipsométrie spectroscopique, Spectroscopic ellipsometry, Elipsometría espectroscópica, Etat natif, Native state, Estado nativo, Etude expérimentale, Experimental study, Gallium arséniure, Gallium arsenides, Matériau semiconducteur, Semiconductor materials, Microscopie force atomique, Atomic force microscopy, Oxyde, Oxides, Rugosité, Roughness, Solution acide, Acidic solution, Solución ácida, Solution aqueuse, Aqueous solutions, Traitement surface, Surface treatments, As Ga, and GaAs

Chemically treated GaAs(001) surfaces in aqueous HCI (0.36 ≤ x ≤ 36 wt%) solutions at 20°C have been studied using spectroellipsometry (SE), ez situ atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and contact-angle measurement techniques. The SE data clearly indicate that the solutions cause the removal of the native oxide film. When the native oxide film is etch-removed, the resulting surface is still rough (∼8Å). Longer exposure to the solutions with x ≤ 12 wt% results in surface roughening; the thickness of the roughened layer immersed in the solution with x = 3.6 wt% for t = 100 min, for example, is ∼60 Å, about twice as large as the AFM rms value (∼27 Å); the difference is due to the SE technique being sensitive to both the surface microroughness and the adsorbed chemical species. By contrast, the concentrated HCI (36 wt%) etching provides a nearly flat (AFM rms of ∼7 Å), Cl-terminated surface even after considerable etching. The XPS spectra clearly indicate the presence of chlorine on the HCl-treated surfaces. The HCl-cleaned GaAs surfaces are also found to be highly hydrophobic.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Emissions électronique et ionique; phénomènes d'impact, Electron and ion emission by liquids and solids; impact phenomena, Emission, ionisation, évaporation et désorption de champ, Field emission, ionization, evaporation, and desorption, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Microélectronique du vide, Vacuum microelectronics, Field emitter and arrays, cold electron emitters, Addition bore, Boron additions, Application, Aplicación, Bruit scintillation, Flicker noise, Caractéristique courant tension, IV characteristic, Diamant, Diamonds, Emission champ, Field emission, Emission électronique, Electron emission, Etude expérimentale, Experimental study, Matériau dopé, Doped materials, Microélectronique vide, Vacuum microelectronics, Plasma, Stabilité, Stability, Terminaison surface, Surface termination, Théorie Fowler Nordheim, Fowler-Nordheim theory, Traitement surface, Surface treatments, and C:B

The stability of field emission current from B-doped diamond thin films terminated with hydrogen and oxygen was measured to investigate the influence of the surface treatment and the dopant concentration on the emission stability. The diamond films were prepared by microwave plasma chemical vapor deposition. The O-termination was performed by acid cleaning in boiling chromic acid and boiling aqua regia. The H-termination was performed by exposing the above sample to hydrogen plasma. The dependence of the emission stability on the B2H6 gas (dopant gas) concentration and the surface treatment was investigated. As a result, little dependence on the B concentration was observed, but dependence on the surface treatment was significant. The field emission of the H-terminated diamond thin films was confirmed to be more stable than the O-terminated films.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Applications des plasmas, Plasma applications, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Carbone, Carbon, Effet dimensionnel, Size effect, Etat vitreux, Vitreous state, Etude expérimentale, Experimental study, Gaine plasma, Plasma sheaths, Masque, Masks, Plasma, Rayon X, X radiation, Spectrométrie photoélectron, Photoelectron spectroscopy, Traitement surface, Surface treatments, and C

Glassy carbon (GC) surfaces were subjected to RF glow-discharged plasma treatment through a simple filter comprising of an aluminum plate with an aperture at the center. Surface properties were estimated by contact angle measurement and the atomic ratio O/C obtained from X-ray photoelectron spectroscopy (XPS). When the aperture was small enough (2r < 1 mm), the properties of the GC surface did not alter with the Ar plasma treatment. Ar ions could not pass through the hole. The surface properties under the hole were changed when 2r was 5 mm, suggesting the acceleration of the Ar ions to the GC surface as a result of the electric field in the sheath. There is a threshold value for aperture size above which the ions can pass through. On the other hand, the properties of the GC surface were changed almost uniformally after O2 plasma treatment with a small aperture size (2r < 1 mm). O2 plasma components travelled to the interior of the sample. It is considered that the radicals mainly acted because they are neutral and uninfluenced by the electric field in the sheath. Radicals in the O2 plasma moved by random walk and could reach the interior of the sample. With 2r of 5 mm, the surface under the hole was mainly changed by ion-assisted reactions.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Dopage et implantation d'impuretés dans d'autres matériaux, Doping and impurity implantation in other materials, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Oxidation, Composé minéral, Inorganic compounds, Métal transition composé, Transition element compounds, Addition arsenic, Arsenic additions, Addition phosphore, Phosphorus additions, Composé binaire, Binary compounds, Couche mince, Thin films, Etude expérimentale, Experimental study, Implantation ion, Ion implantation, Oxydation, Oxidation, Prétraitement, Pretreatment, Pretratamiento, Silicium oxyde, Silicon oxides, TEM, Traitement surface, Surface treatments, Tungstène oxyde, Tungsten oxides, Si W, and WSi2

We investigated the oxidation of crystallized tungsten silicide. We also researched the effects of preimplantation by P (or As) on the oxidation. Our results showed that the oxidation involved decomposition of the tungsten disilicide and consumption of the underlying polycrystalline silicon (polysilicon), consequently causing serious reliability problems. Cross-sectional transmission electron microscopy (XTEM) analysis showed that the oxide consisted of crystalline WO3 and amorphous SiO2 which was not removed completely using chemical solutions such as 100:1 HF and 7 : 1 buffered oxide etchant, (BOE). However, P (or As) implantation prior to oxidation produced a SiO2 layer free of tungsten oxide. In particular, phosphorous implantation into silicide yielded a much thinner SiO2 layer on the silicide than As, which might be attributed to the presence of P2O5in the oxide.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Transport électronique dans des structures à interface, Electronic transport in interface structures, Structures métal-isolant-semiconducteur (incluant les structures semiconducteur-isolant), Metal-insulator-semiconductor structures (including semiconductor-to-insulator), Caractéristique capacité tension, CV characteristic, Caractéristique courant tension, IV characteristic, Etude expérimentale, Experimental study, Oxydation, Oxidation, Plasma, Recuit, Annealing, Silicium oxyde, Silicon oxides, Silicium, Silicon, Théorie Fowler Nordheim, Fowler-Nordheim theory, Traitement surface, Surface treatments, O Si, Si, and SiO2

N- and p-type Si were oxidized using an inductively coupled oxygen-argon mixed plasma at about 60°C and 300°C. The flow-rate ratio of O2 (O2/(O2 + Ar)) was fixed at 80%. Capacitance-voltage (C-V) characteristics were improved by a combination of substrate heating at 300°C and post-thermal annealing at 500°C for 30 min in an oxygen ambient as compared with those reported previously. However, the interface-state density was about 1 x 1012 eV-1 cm-2, still higher than that in the device-grade thermal SiO2/Si interface. The conductance-voltage (G-V) characteristics showed rather large conductance in the accumulation region for both oxide samples grown on p- and n-Si substrates as compared with thermal oxides. The X-ray photoelectron spectroscopic (XPS) measurements revealed that a fairly uniform SiO2 layer was formed in the upper portion of the film using this technique although the transition region was observed at the interface between oxide and Si, which was composed of the Si suboxides such as Si2O3 and SiO. The thickness of this transition region was roughly 13-15 nm which was larger than that for the thermal oxide/Si interface. Current-voltage (I-V) characteristics showed that the leakage current was mainly Fowler-Nordheim (F-N) tunneling current and much smaller for the oxide on p-Si than for the oxide on n-Si. The breakdown voltage was also higher for the oxide/p-Si than for the oxide/n-Si. The reason for these findings was discussed on the basis of the F-N current mechanism.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Epitaxie par faisceaux chimiques, ioniques, atomiques et moléculaires, Molecular, atomic, ion, and chemical beam epitaxy, Composé minéral, Inorganic compounds, Adatome, Adatoms, Composé binaire, Binary compounds, Couche mince, Thin films, Couche épitaxique, Epitaxial layers, Croissance cristalline en phase vapeur, Crystal growth from vapors, Epitaxie jet moléculaire, Molecular beam epitaxy, Etude expérimentale, Experimental study, Fil quantique, Quantum wires, Formation motif, Patterning, Formacíon motivo, Gallium arséniure, Gallium arsenides, Longueur diffusion(transport), Diffusion length, Matériau semiconducteur, Semiconductor materials, Prétraitement, Pretreatment, Pretratamiento, Rainure, Groove, Ranura, Substrat, Substrates, Traitement surface, Surface treatments, As Ga, and GaAs

The surface diffusion length of Ga adatoms under As2 or As4flux has been measured using V-grooved GaAs (001) substrates in molecular beam epitaxy. The diffusion length on the (001) surface toward the [110] direction, of Ga adatoms under As2 flux is about half of that under As4 flux. A smaller number of Ga atoms under As2 flux migrate to the (001) ridge surface from the sidewall surface than those under As4 flux. Furthermore, the Al0.6Ga0.4As layer on the V-grooved GaAs substrate grown under As2 flux preserve the V-shape, whereas the V-shape cannot be preserved during the growth under As4 flux. The GaAs quantum wire structures which have Al0.6Ga0.4As barrier layeres are fabricated under As2 flux.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Transformation de matériaux métalliques, Production techniques, Traitements de surface, Surface treatment, Autres traitements de surface, Other surface treatments, Acier inoxydable 430, Stainless steel-430, Acier inoxydable ferritique, Ferritic stainless steel, Acero inoxidable ferrítico, Ferritischer nichtrostender Stahl, Attaque chimique, Chemical etching, Ataque químico, Chemisches Aetzen, Couche oxyde, Oxide layer, Capa óxido, Oxidschicht, Enlèvement, Removal, Toma, Fluorhydrique acide, Hydrofluoric acid, Ácido fluorhídrico, Flusssaeure, Mécanisme, Mechanism, Mecanismo, Nitrique acide, Nitric acid, Nítrico ácido, Salpetersaeure, Recuit, Annealing, Recocido, Gluehen, Sulfurique acide, Sulfuric acid, Sulfúrico ácido, Schwefelsaeure, Traitement surface, Surface treatment, Tratamiento superficie, Oberflaechenbehandlung, Tôle laminée à chaud, Hot rolled sheet, Chapa laminada en caliente, Warmgewalztes Blech, and Acier Cr16

Iron oxides can be reduced in a scale by batch annealing treatment in a reducing atmosphere of 7 vol% H2 + 93 vol% N2 at 1123 K for hot-rolled coils of type 430 stainless steel. The heating processes cause cracks, a Cr2O3 layer in the scale and a Cr depleted layer on the substrate. It is possible to produce a large number of cracks in the scale by employing a scale breaker. The ease of descaling is positively related to the amount of bending elongation. Similarly with shot blasting, descaling becomes easier as the projection energy of the shot blasting increases. The pickling solution penetrates the scale through cracks on the surface of the strip, and its acid dissolves the stainless steel coil and part of the scale. The scale peels from the stainless steel coil in island-like exfoliation until the scale has been removed from the entire surface of the stainless steel coil.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Surface cleaning, etching, patterning, Non métal, Nonmetals, Caractérisation, Characterization, Caracterización, Etat natif, Native state, Estado nativo, Etude expérimentale, Experimental study, Hydrogène Peroxyde, Hydrogen Peroxides, Modèle milieu effectif, Effective medium model, Modelo medio efectivo, Nettoyage chimique, Chemical cleaning, Limpieza química, Nettoyage surface, Surface cleaning, Ozone, Pastille électronique, Wafers, Procédé voie humide, Wet process, Procedimiento vía húmeda, Rayon X, X radiation, Silicium, Silicon, Spectre IR, Infrared spectra, Spectrométrie photoélectron, Photoelectron spectroscopy, TEM, Traitement surface, Surface treatments, Transformation Fourier, Fourier transformation, and Si

The structures of silicon native oxides formed in the SC-1, H2O2 and wet ozone processes were characterized using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FT-IR). Spectral simulation was performed to clarify the FT-IR spectra, assuming that the native oxide was pure silicon dioxide. Effective medium theories were applied to understand deviations of the observed spectra from the calculated ones. The deviations between the native oxide thickness evaluated by XPS and the absolute thickness obtained by TEM were also discussed. These deviations can be explained if the void is incorporated in the native oxides and the interface between the native oxide and the basal silicon obtained by the wet ozone process has a relatively smooth surface and a structure more similar to that of pure silicon dioxide, compared with that obtained by SC-1 or H2O2 treatment.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Applications des plasmas, Plasma applications, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Surface cleaning, etching, patterning, Composé minéral, Inorganic compounds, Non métal, Nonmetals, Attaque chimique, Chemical etching, Ataque químico, Cinétique, Kinetics, Composé binaire, Binary compounds, Concentration chimique, Chemical concentration, Concentración química, Décharge luminescente, Glow discharges, Etude expérimentale, Experimental study, Matériau semiconducteur, Semiconductor materials, Mode opératoire, Operating mode, Método operatorio, Silicium oxyde, Silicon oxides, Silicium, Silicon, Spectre émission, Emission spectra, Substrat, Substrates, Traitement surface, Surface treatments, O Si, Si, and SiO2

F atoms were generated by a low power microwave discharge of various Ar/CF4 mixtures in a fast discharge flow. They were used for Si and SiO2 etching at room temperature. The variations of the relative concentration of F as functions of various etching parameters were monitored by observing CH(A2Δ-X2Πr) emission resulting from the Ar(3P0.2)/CH3 reaction. The emission spectra of Ar/CF4 mixtures in the microwave discharge indicated that CF4was decomposed into C and F atoms in the discharge region because of the lack of emissions from CF*, CF2*, and CF3*. The etching rates of Si and SiO2 were about 700 and 70 Å/min, respectively, at a microwave power of 100 W, an Ar flow rate of 3000 sccm, a CF4 flow rate of 250 sccm, a total pressure of 0.23 Torr and a distance between the center of discharge and the substrate of 12 cm.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.), Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.), Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.), Non métal, Nonmetals, Couche mince, Thin films, Croissance cristalline en phase vapeur, Crystal growth from vapors, Densité germination, Nucleation density, Diamant, Diamonds, Effet champ magnétique, Magnetic field effects, Etude expérimentale, Experimental study, Hyperfréquence, Microwave radiation, Microstructure, Minéral synthétique, Synthetic mineral, Mineral sintético, Méthode PECVD, PECVD, Prétraitement, Pretreatment, Pretratamiento, Substrat, Substrates, Tension polarisation, Bias voltage, Voltage polarización, Traitement surface, Surface treatments, and C

Diamond thin films were deposited on p-type Si(100) wafers by microwave plasma enhanced chemical vapor deposition (MPECVD) using mixtures of H2, CH4 and O2 gases. Deposition was carried out at a substrate temperature of 900°C and a pressure of 40 Torr. In order to examine the effect of pretreatment on the film formation, SiC and diamond powders were used as pretreatment powders. Also, the methane gas ratio in the gas mixture was varied to observe its effect on the crystal structure of diamond films. Furthermore, the substrate bias effect on the diamond film formation was examined. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy were utilized to characterize the microstructures of diamond thin films. The highest nucleus density was obtained by pretreatment with diamond powders of 40-60 μm in size and a negative bias potential to the substrates. The deposited diamond films were found to contain many defects. The density of the defects increased with CH4 concentration in the gas mixtures. It is believed that the gas mixture with a high CH4 ratio must have promoted the formation of a graphite phase, probably due to the insufficient amount of atomic hydrogen acting as a selective etchant for graphite. Diamond films with good quality and a nucleus density of 108/cm2 could be deposited by utilizing the combined effects of a negative bias potential and a magnetic field.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Analyse surface, Surface analysis, Análisis superficie, Composé ternaire, Ternary compound, Compuesto ternario, Diamine, Diamina, Electroluminescence, Electroluminiscencia, Etain Oxyde, Tin Oxides, Estaño Óxido, Etude expérimentale, Experimental study, Estudio experimental, Fabrication, Manufacturing, Fabricación, Indium Oxyde, Indium Oxides, Indio Óxido, Matériau organique, Organic material, Material orgánico, Traitement surface, Surface treatment, Tratamiento superficie, and In O Sn

The effects of several surface treatment techniques for indium-tin-oxide (ITO) substrates on the surface properties and the initial nucleation processes of trisphenyldiamine (TPD) have been investigated. Mechanical rubbing, HCI treatment, and 02-plasma irradiation smoothen the ITO surface and enhance the cohesion of TPD molecules. As-received ITO surfaces promote amorphous structure of the TPD molecules; this results in effective carrier transport, but the substrate surface is too rough on a molecular scale for the fabrication of very thin (e.g., < 200Å) layered structures. Layer-by-layer amorphous nucleation on flat surfaces is a key technology for the fabrication of future organic electroluminescence (EL) device structures with very thin constituent layers. 02-plasma treatment reduces the potential barrier for hole injection from ITO to TPD with moderate cohesion of TPD molecules, and results in brighter EL devices than those on as-received ITO substrates.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Surface hardening: nitridation, carburization, carbonitridation, Non métal, Nonmetals, Caractéristique courant tension, IV characteristic, Etude expérimentale, Experimental study, Matériau semiconducteur, Semiconductor materials, Nitruration, Nitridation, Oxydation, Oxidation, Plasma, Rayon X, X radiation, Silicium, Silicon, Spectrométrie photoélectron, Photoelectron spectroscopy, Traitement surface, Surface treatments, and Si

Oxynitridation of Si was performed using an inductively coupled nitrogen and oxygen mixed plasma with and without substrate heating up to 300°C. Fairly good capacitance-voltage characteristics were obtained for the film grown with an O2 flow-rate ratio of 80% (O2 : N2 = 8:2) with substrate heating at 200-300°C and post-thermal annealing at 500°C for 30 min in an oxygen ambient. The current-voltage characteristics showed that the Fowler-Nordheim tunneling current was the main leakage current mechanism and the barrier height was estimated to be about 2.02-2.14eV with an effective electron mass of 0.42-0.5mo (mo : free electron mass). X-ray photoelectron spectroscopic measurements showed that the Si oxide (including Si suboxide) and Si oxynitride (Si2N2O)/Si nitride (Si3N4) were formed, respectively, at or near the top surface, and at the interface of the grown film and Si substrate, i.e., Si oxide/Si oxynitride-nitride mixture/Si layered structures were always obtained. The growth kinetics were also speculated on.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Oxidation, Composé minéral, Inorganic compounds, Composé binaire, Binary compounds, Etude expérimentale, Experimental study, Hydrogène, Hydrogen, Liaison chimique, Chemical bonds, Matériau semiconducteur, Semiconductor materials, Recuit, Annealing, Silicium carbure, Silicon carbides, Spectre IR, Infrared spectra, Terminaison surface, Surface termination, Traitement surface, Surface treatments, Transformation Fourier, Fourier transformation, C Si, and SiC

The Si-H bonds on the 6H-SiC(0001) on-axis surface were investigated using Fourier-transformed infrared attenuated total reflection (FTIR-ATR). The clear absorption bands of the Si-H stretching vibrations were observed from the 6H-SiC(0001) on-axis surface after H2 annealing. The configuration of the Si-H bonds on the surface was discussed from the polarized spectra, the chemical characteristics and the electronegativities of the atoms bonded to the Si. The FTIR-ATR spectra suggested that the 6H- SiC(0001) on-axis surface after H2 annealing at 1000°C was primarily terminated by silicon monohydride with high regularity.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Surface hardening: nitridation, carburization, carbonitridation, Composé minéral, Inorganic compounds, Non métal, Nonmetals, Composé ternaire, Ternary compounds, Croissance cristalline, Crystal growth, Epaisseur, Thickness, Etude expérimentale, Experimental study, Matériau semiconducteur, Semiconductor materials, Nitruration, Nitridation, Onde hélicon, Helicon waves, Oxydation, Oxidation, Plasma, Rayon X, X radiation, Silicium Oxynitrure, Silicon Oxynitrides, Silicium, Silicon, Spectrométrie photoélectron, Photoelectron spectroscopy, Traitement surface, Surface treatments, N O Si, Si2N2O, and Si

Si was oxynitrided with helicon-wave excited N2 and Ar mixed plasma. The flow-rate ratio (N2:Ar) was kept constant (8:2). Oxynitridations were performed in two growth geometries in which plasma was either concentrated on the substrate or diverged from the substrate using permanent magnets. In the case of plasma concentration, relatively uniform Si oxynitride (probably Si2N2O) was formed throughout the entire depth of the film. In the case of plasma divergence, however, only Si oxide was grown. Therefore, the presence of nitrogen ions is concluded to be essential for oxynitridation of Si.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Surfaces solides et interfaces solide-solide, Solid surfaces and solid-solid interfaces, Structure et topographie de surface, Surface structure and topography, Non métal, Nonmetals, Etude expérimentale, Experimental study, Fil, Wires, Liaison disponible, Dangling bonds, Manipulation, Manipulación, Matériau semiconducteur, Semiconductor materials, Reconstruction surface, Surface reconstruction, STM, Silicium, Silicon, Spectrométrie tunnel, Tunneling spectrometry, Espectrometría túnel, Structure atomique, Atomic structure, Estructura atómica, Structure surface, Surface structure, Surface, Surfaces, Traitement surface, Surface treatments, Si, and Terminaison hydrogène

Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2X1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Surface cleaning, etching, patterning, Non métal, Nonmetals, Enlèvement, Removal, Etude expérimentale, Experimental study, Gravure plasma, Plasma etching, Grabado plasma, Hydrogène, Hydrogen, Matériau semiconducteur, Semiconductor materials, Oxygène, Oxygen, Silicium, Silicon, Surface, Surfaces, Traitement surface, Surface treatments, and Si

This paper focuses on the removal of oxygen from a Si(100) surface by hydrogen plasma etching under high-vacuum conditions, i.e., the reaction-chamber base pressure is = 10-7 mbar. The efficiency of oxygen removal from the Si(100) surface in the employed DC hydrogen glow discharge, with the sample at room temperature, is found to depend on the ratio of H2- and H2O partial pressures, the latter of which depends on the reaction-chamber base pressure and the amount of H2O liberated from the reaction-chamber walls by the plasma. This ratio reflects the competition between reduction of the Si surface by atomic hydrogen and reoxidation of the Si surface by residual H2O. A low-energy hydrogen ion bombardment is found to facilitate the reduction of the Si surface oxides. This process is most efficient when the sample potential is kept at 25V below the plasma potential, i.e., when the surface is struck by 25-V protons.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Interfaces solide-fluide, Solid-fluid interfaces, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Sciences appliquees, Applied sciences, Metaux. Metallurgie, Metals. Metallurgy, Surface cleaning, etching, patterning, Métal transition, Transition elements, Chlore, Chlorine, Couche mince, Thin films, Cuivre, Copper, Etude expérimentale, Experimental study, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Gravure plasma, Plasma etching, Grabado plasma, Mécanisme, Mechanism, Mecanismo, Rayon X, X radiation, Résonance cyclotronique électronique, Electron cyclotron-resonance, Spectrométrie optique, Optical spectrometry, Espectrometría óptica, Spectrométrie photoélectron, Photoelectron spectroscopy, Spectrométrie émission, Emission spectroscopy, Traitement surface, Surface treatments, and Cu

In order to investigate the reactive ion etching mechanism of the copper films in CCl4 /N2 electron cyclotron resonance (ECR) plasma, the dependences of the copper etch rate on various etching parameters, the etch products as well as their depth distributions and the concentration of chlorine radicals in the plasma were examined. It was found that the etching species in CCl4 plasma is not CClxbut atomic chlorine (Cl) and the etch product formed at the surface of the copper film is not CuCl but CuCl2. In order to carry out reactive ion etching of copper film in chlorine-based plasma the substrate temperature should be above 210°C1 below which the etch product has too low vapor pressure to be volatile. At the substrate temperature above 210°C, the copper etch rate is not limited by the removal rate of the etch product but limited by its formation rate which depends on the concentration of chlorine radicals and the reaction rate between the etching species and the copper film. The etch rate is also increased by applying a negative bias to the substrate, the role of which is the enhancement of the formation rate of the etch product by activating chemical reactions due to energetic ion bombardment. Adding small amounts of CF4 to CCl4plasma increases the etch rate dependence on ion bombardment energy by forming involatile copper fluoride on the etched surface.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Traitements de surface, Surface treatments, Surface hardening: nitridation, carburization, carbonitridation, Non métal, Nonmetals, Accouplement induction, Induction coupling, Acoplamiento inducción, Caractéristique courant tension, IV characteristic, Constante diélectrique, Permittivity, Etude expérimentale, Experimental study, Matériau semiconducteur, Semiconductor materials, Nitruration, Nitridation, Onde hélicon, Helicon waves, Oxydation, Oxidation, Plasma, Silicium Oxynitrure, Silicon Oxynitrides, Silicium, Silicon, Traitement surface, Surface treatments, N O Si, Si2N2O, and Si

Si was oxynitrized (and/or nitrized) in both helicon-wave-excited and inductively-coupled N2 or N2 + Ar mixed plasma. Fairly good capacitance-voltage (C-V) characteristics were obtained after post-thermal annealing at 400°-500° C for 30 min in nitrogen ambient. X-ray photoelectron spectroscopic (XPS) measurements showed that chemically stoichiometric Si oxynitride, Si2 N2 O, was uniformly formed throughout the whole film thickness at a flow-rate ratio of N2 of 80% in a N2 + Ar mixed plasma (N2 Ar = 8 : 2). On the other hand, SiO2 was formed at the outer surface while Si2 N2O was formed in the middle portion of the film and near the interface between the grown film and Si, when the flow-rate ratio of N2was less than about 80%. The growth rate and the degree of nitridation were maximum at now-rate ratio of N2 of 80%. The leakage current in the film was found to be mainly the Fowler-Nordheim-type tunneling current.

Crystallography, Cristallographie cristallogenèse, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Dispositifs à plasmas, Plasma devices, Torches à plasma, Plasma torches, Applications des plasmas, Plasma applications, Argon, Caoutchouc, Rubbers, Etude expérimentale, Experimental study, Oxygène molécule, Oxygen molecules, Pression atmosphérique, Atmospheric pressure, Réflexion totale atténuée, Total attenuated reflection, Reflexión total atenuada, SEM, Torche plasma, Plasma torches, Traitement surface, and Surface treatments

A new application of the atmospheric cold plasma torch has been investigated. Namely, the surface treatment of an air-exposed vulcanized rubber compound. The effect of plasma treatment was evaluated by the bondability of the treated rubber compound with another rubber compound using a polyurethane adhesive. The adhesion property was improved by treatment of the rubber compound with plasma containing oxygen radicals. Physical and chemical changes of the rubber surface as a result of the plasma treatment were analyzed by field emission scanning electron microscopy (FE-SEM) and fourier transform infrared attenuated total reflection (FTIR-ATR).