Self-assembled growth of inclined GaN nanorods on (10 - 10) m-plane sapphire using metal-organic chemical vapor deposition
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- Authors:
- SOORYONG CHAE
KYUSEUNG LEE
JONGJIN JANG
DAEHONG MIN
JAEHWAN KIM
OKHYUN NAM - Author Affiliations:
- Advanced Photonics Research Center (APRC)/LED Technology Center, Department of Nano-Optical Engineering, Korea Polytechnic University (KPU), 237, Sangidaehak-ro, Siheung-si, Gyeonggi-do 429-793, Korea, Republic of
- Source:
- Journal of crystal growth. 409:65-70
- Publication Date:
- 2015-01-01
- Language:
- English
- Abstract:
- We report the self-assembled growth of inclined and highly ordered GaN nanorods on (10 - 10) m-plane sapphire by metal-organic chemical vapor deposition, without metal catalyst. To determine the growth mechanism we performed a systematic study of the effect of the SiH4 flow, V/III ratio, growth temperature and growth time on growth behavior, demonstrating that optimized parameters were required for the growth of nanorods with high aspect ratios. High resolution X-ray diffraction showed that the nanorods were inclined at an angle of 58.4 with respect to the substrate normal and followed a well-defined epitaxial relationship with respect to the on-axis plane of the nanorods, the (11-22) semipolar plane, and the (10-10) m-plane sapphire. Finally cathodoluminescence showed that the near band edge emission of the Si-doped nanorod was asymmetric and broad owing to the band filling effect resulting from high carrier concentration, compared to the undoped GaN.
- Notes:
- Physics and materials science
- Subjects:
- Crystallography
Cristallographie cristallogenèse
Geology
Géologie
Metallurgy, welding
Métallurgie, soudage
Sciences exactes et technologie
Exact sciences and technology
Physique
Physics
Domaines interdisciplinaires: science des materiaux; rheologie
Cross-disciplinary physics: materials science; rheology
Science des matériaux
Materials science
Nanomatériaux et nanostructures : fabrication et caractèrisation
Nanoscale materials and structures: fabrication and characterization
Fils quantiques
Quantum wires
Divers
Other topics in nanoscale materials and structures
Méthodes de croissance cristalline; physique de la croissance cristalline
Methods of crystal growth; physics of crystal growth
Théorie et modèles de la croissance cristalline; physique de la croissance cristalline, morphologie cristalline et orientation cristalline
Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
Méthodes de nanofabrication
Methods of nanofabrication
Autoassemblage
Self-assembly
Addition silicium
Silicon additions
Autoassemblage
Self-assembly
Catalyseur
Catalysts
Cathodoluminescence
Composé III-V
III-V compound
Compuesto III-V
Couche épitaxique
Epitaxial layers
Densité porteur charge
Carrier density
Diffraction RX
XRD
Dépendance temps
Time dependence
Epitaxie
Epitaxy
Mécanisme croissance
Growth mechanism
Mecanismo crecimiento
Méthode MOCVD
MOCVD
Nanobâtonnet
Nanorod
Nanopalito
Nanomatériau
Nanostructured materials
Rapport aspect
Aspect ratio
Saphir
Sapphire
Semiconducteur III-V
III-V semiconductors
Synthèse nanomatériau
Nanomaterial synthesis
Síntesis nanomaterial
8107V
8110A
8116D
GaN
Substrat GaN
A1. Nanorods
A1: Catalyst-free
A1: Self-assembled growth
A3. MOCVD
B1. GaN
B1: m-Sapphire - Format:
- Academic Journal
- Database:
- PASCAL Archive
- Journal:
- Journal of crystal growth
- Volume:
- 409
- Page Start:
- 65
- Page Count:
- 6
- ISSN:
- 00220248
- Publisher:
- Amsterdam: Elsevier, 2015.
- Document Type:
- Article
- Physical Description:
- print, 42 ref
