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Book
1 volume.
本书介绍中国古代小说的源流与主要成就, 重要作家作品, 引导读者欣赏中国文学的兴趣与门径.说部之体, 渊源于史传; 志怪志人, 滥觞于六朝.唐传奇, 宋话本, 各擅其胜.章回长篇, 明清为盛, 四大奇书, 雅俗共赏, "红楼"-梦, 是为巅峰.而话本短篇, '三言', '二拍', 坊间刊刻, 流播市井.讽时骂世, 谈鬼说神, 演说痴情, 了断公案, 演绎历史, 表彰忠义, 尽在古今传奇之中.
East Asia Library
Book
1 online resource (xii, 250 pages) : illustrations (some color)
  • Pressure estimation of wet clutch
  • Torque phase control of clutch-to-clutch shift process
  • Inertia phase control of clutch-to-clutch shift process
  • Torque estimation of vehicle drive shaft
  • Clutch disengagement timing control of AMT gear shift
  • Clutch engagement control of AMT gear shift
  • Data-driven start-up control of AMT vehicle.
Nonlinear Estimation and Control of Automotive Drivetrains discusses the control problems involved in automotive drivetrains, particularly in hydraulic Automatic Transmission (AT), Dual Clutch Transmission (DCT) and Automated Manual Transmission (AMT). Challenging estimation and control problems, such as driveline torque estimation and gear shift control, are addressed by applying the latest nonlinear control theories, including constructive nonlinear control (Backstepping, Input-to-State Stable) and Model Predictive Control (MPC). The estimation and control performance is improved while the calibration effort is reduced significantly. The book presents many detailed examples of design processes and thus enables the readers to understand how to successfully combine purely theoretical methodologies with actual applications in vehicles. The book is intended for researchers, PhD students, control engineers and automotive engineers.
Book
7, 9, 238 p. : ill. ; 21 cm.
East Asia Library
Book
[1], 298 p. ; 21 cm.
East Asia Library
Book
2, 389 p. : ill. ; 22 cm.
East Asia Library
Book
6, 8, 401 p. : ill. ; 25 cm.
East Asia Library

7. Yi wang wu ji. [2006]

Book
183p. : ill. ; 19 cm.
East Asia Library
Book
95 p. : ill., ports. ; 24 cm.
East Asia Library
Book
p.193-314 ; 29 cm.
SAL1&2 (on-campus shelving)
Book
p.315-363 ; 29 cm.
SAL1&2 (on-campus shelving)

11. Guan Wenwei zhuan [2002]

Book
4, 3, 733 p. : ill. (some col.) ; 22 cm.
East Asia Library
Book
119 p. : ill. (some col.) ; 23 cm.
East Asia Library
Book
xvi, 405 p. : ill. ; 24 cm.
Science Library (Li and Ma)
Book
p. 439-502 ; 27 cm.
East Asia Library
Book
2, 4, 256 p. : ill. (some col.) ; 19 cm.
East Asia Library
Book
vi, 175 leaves, bound.
SAL3 (off-campus storage), Special Collections
Book
38, 34 leaves ; 20 cm.
SAL1&2 (on-campus shelving)
Book
6 double leaves in case ; 20 cm.
SAL1&2 (on-campus shelving)
Book
1 online resource.
Since NAND Flash faces challenges in continuing its rapid scaling, resistive switching random access memory (RRAM) has attracted significant attention due to its strong potential as a next generation memory device. A number of high-capacity RRAM chips have recently demonstrated the potential use of RRAM for solid-state storage applications. RRAM has outperformed NAND Flash in many aspects at the singe-device level, so the only remaining question is whether three dimensionally (3D) integrated RRAM can compete with 3D NAND Flash in the cost per bit. Therefore, it is necessary to develop a technology path towards 3D integration for future mass storage. This thesis describes a novel 3D vertical RRAM cross-point array architecture with a cost-effective fabrication process. This 3D RRAM concept is experimentally demonstrated using a double-layer stacked HfOx-based RRAM structure. The device shows excellent and consistent switching characteristics among all the layers, suggesting the potential of stacking even more layers. In the first part of the thesis, a comprehensive overview of vertical-RRAM research, ranging from memory architecture design, corresponding read/write schemes, device fabrication and characterization, interface engineering, array demonstrations, scaling limit investigations, array write-operation robustness, and array analysis is described. Results obtained from both simulations and experiments illustrate the benefits and feasibility of a 3D multi-layer stacked vertical RRAM array. The second part of the thesis presents the exploration of future memory devices with the use of carbon-based nano-materials in resistive switching memories. First, an electrode/oxide interface with inserted single-layer graphene (SLG) raises the low resistance state (LRS) resistance (> M [omega]) due to its intrinsically high out-of-plane resistance in RRAM. The raised LRS enables the design of larger array sizes because applied voltages will drop mostly on memory cells instead of on the interconnect. Next, the interface between the oxide layer and metal electrode is studied using Ramen spectroscopy coupled with electrical measurement. Raman mapping and single point measurements show noticeable changes in both D-band and G-band signals of SLG during electrical cycling. This observation suggests an alternative method to study switching mechanisms in RRAM. Finally, laser scribing is described as an attractive graphene growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. A low-cost, transfer-free, flexible resistive switching device is demonstrated based on laser-scribing reduced graphene oxide (rGO) that exhibits forming-free behavior and stable switching up to 100 cycles. Moreover, reasonable reliability performance and 2-bit storage capability are demonstrated. The control experiments investigate the conducting mechanism of the resistive switching, and the temperature-dependent electrical measurement sheds further light on the working principles of the fabricated resistive switching device.
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